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STMicroelectronics STP85NF55L
- Part No.:
- STP85NF55L
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP85NF55L.pdf
- Description:
- MOSFET N-CH 55V 80A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,996
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Product details
Overview
STP85NF55L from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 55 V VDSS, 80 A continuous drain current, and 0.0060 Ω typical RDS(on) at VGS = 10 V. It features logic-level gate drive (VGS(th) typ. 1.6 V), rugged unclamped inductive switching capability (EAS = 980 mJ), and is optimized for high-current DC motor control and automotive body electronics.
For engineers reviewing the STP85NF55L datasheet, STP85NF55L pinout, STP85NF55L application, or STP85NF55L equivalent, key selection criteria include its low RDS(on) at 5 V gate drive, avalanche energy rating, thermal resistance (Rthj-case = 0.5 °C/W), and TO-220 mechanical compatibility with standard heatsinks.
Technical Context
This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance without compromising avalanche ruggedness. Its gate charge profile (Qg = 80 nC typ., Qgd = 45 nC) supports efficient 10–100 kHz switching in hard-switched topologies.
The integrated body diode exhibits fast reverse recovery (trr = 80 ns typ., Qrr = 240 nC) under high di/dt (100 A/µs), making it suitable for freewheeling in inductive loads where synchronous rectification is not implemented.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; defines safe operation in 48 V automotive and industrial bus systems. |
| RDS(on) @ VGS = 10 V | 0.0060 Ω typ. - Enables <1.9 W conduction loss at 80 A, reducing heatsink requirements in high-current switches. |
| RDS(on) @ VGS = 5 V | 0.008 Ω max. - Confirmed logic-level drive capability; compatible with 5 V microcontrollers without gate drivers. |
| EAS | 980 mJ - Single-pulse avalanche energy rating ensures robustness during inductive turn-off transients (e.g., solenoid de-energization). |
| Qg | 80 nC typ. - Total gate charge determines driver power requirement and switching speed in PWM applications. |
| Rthj-case | 0.5 °C/W - Junction-to-case thermal resistance enables 300 W dissipation with ≤150 °C junction rise over case at 25 °C ambient. |
Pinout & Package
STP85NF55L uses a standard TO-220 package (3-lead, vertical mounting, isolated tab). The drain is connected to the metal tab for direct heatsinking; source and gate are on leads 1 and 2 respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Source | Reference node for gate drive and load return path; electrically tied to internal substrate backside. |
| Lead 2 (center) | Gate | Control terminal requiring low-charge drive (Qg = 80 nC); sensitive to ESD (±15 V absolute max). |
| Lead 3 (right) + Tab | Drain | Main power output node; thermally and electrically connected to metal tab for heatsink interface. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.0–2.5 V - Ensures full enhancement with 3.3 V or 5 V MCU GPIO without level-shifting. |
| Rugged avalanche capability | EAS = 980 mJ - Eliminates need for external snubbers in relay/solenoid driving and H-bridge freewheeling. |
| Low gate charge | Qgd/Qg = 45/80 nC - Reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations. |
| Fast body diode recovery | trr = 80 ns, Qrr = 240 nC - Minimizes switching losses and voltage overshoot when used as freewheeling element. |
Applications
| Automotive Body Control Module (BCM) | Industrial DC Motor Driver |
|---|---|
Use Scenario: Driving 12 V/24 V window lift, seat actuator, or headlight leveling motors in OEM BCMs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional motor current up to 80 A peak. Use Value: Low RDS(on) minimizes I²R heating during sustained stall conditions; avalanche rating handles inductive kickback without clamping diodes. | Use Scenario: PWM-controlled brushed DC motor in conveyor systems, pumps, or CNC axis drives. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology operating at 20–50 kHz. Use Value: Gate charge and capacitance values enable clean turn-on/turn-off with standard gate drivers; TO-220 mount simplifies thermal management on PCB heatsinks. |
| 48 V Telecom Power Distribution | High-Current Solid-State Relay Replacement |
Use Scenario: Hot-swap and load-switching in 48 V intermediate bus architectures for base station power shelves. IC Role / Device Role / Timing Role: Inrush-limited main power switch with controlled dv/dt (10 V/ns max) and SOA compliance. Use Value: 55 V rating provides 15 % margin over 48 V nominal; low RDS(on) reduces insertion loss and improves system efficiency. | Use Scenario: Replacing electromechanical relays in HVAC damper actuators, battery disconnect units, and EV charging contactor backups. IC Role / Device Role / Timing Role: Bidirectional load switch with integrated body diode supporting reverse current during fault clearing. Use Value: 320 A pulsed current rating (IDM) supports short-circuit withstand; TO-220 footprint allows drop-in replacement of legacy relay driver modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 0.004 Ω @ 10 V but VDSS = 40 V; higher Qg (131 nC); no specified EAS. | Not suitable for 48 V systems; requires stronger gate driver; less rugged in inductive switching. | Select only for 12–24 V designs where lower on-resistance outweighs voltage margin and avalanche needs. |
| IXTH80N55L2 | VDSS = 55 V, RDS(on) = 0.0075 Ω @ 10 V, EAS = 1100 mJ, but TO-247 package and higher cost. | Superior avalanche performance and thermal margin, but larger footprint and incompatible with TO-220 heatsinks. | Prefer for mission-critical 55 V applications demanding extended SOA and field-proven reliability. |
Compared with IRF1404PBF and IXTH80N55L2, STP85NF55L delivers optimal balance of 55 V rating, logic-level drive, TO-220 compatibility, and verified avalanche ruggedness-making it the preferred choice for cost-sensitive, space-constrained 48 V and automotive body electronics.
Availability
STP85NF55L is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drivers, 48 V telecom power distribution, and solid-state relay replacements requiring stable component supply across production lifecycles.
Supply support for STP85NF55L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities.
The STripFET™ series targets high-efficiency power switching in automotive and industrial applications, emphasizing ruggedness, low conduction loss, and gate-drive simplicity for embedded control systems.
FAQ
Is STP85NF55L suitable for use in a half-bridge configuration?
Yes. Its 55 V VDSS, low Qgd/Qg ratio (45/80 nC), and 10 V/ns dv/dt rating support reliable half-bridge operation up to 40 V bus voltage. Layout must minimize source inductance and ensure gate drive impedance ≤4.7 Ω to avoid oscillation during switching transitions.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies ID = 80 A at both TC = 25°C and TC = 100°C. This reflects derating-free operation enabled by low RDS(on) and high thermal conductivity of the TO-220 package, provided the heatsink maintains TC ≤100°C under steady-state load.
Does STP85NF55L have built-in ESD protection on the gate?
No. The gate oxide is unprotected against human-body-model ESD. The absolute maximum gate-source voltage is ±15 V, and gate leakage (IGSS) is ±100 nA at ±15 V. External Zener clamps or series resistors are recommended in automated handling and high-noise environments.
Can STP85NF55L replace STB85NF55L in existing designs?
Yes, with identical electrical specs and thermal performance. STP85NF55L (TO-220) and STB85NF55L (D2PAK) share the same die and characterization data. Mechanical substitution requires verifying PCB footprint, heatsink interface, and creepage/clearance for the TO-220 form factor.
STP85NF55L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4050 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP85NF55L FAQ
1.How can I place an order for STP85NF55L through Aetrix?
Please submit a Request for Quotation (RFQ) for STP85NF55L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP85NF55L reliable?
The price and inventory of STP85NF55L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP85NF55L is usually 5 days.
3.What payment methods are accepted for STP85NF55L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP85NF55L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP85NF55L?
STP85NF55L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP85NF55L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP85NF55L?
For technical support, including STP85NF55L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP85NF55L requirements.
6.How does Aetrix verify that STP85NF55L is sourced from the original manufacturer or authorized distributors?
All STP85NF55L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP85NF55L meets industry standards.
7.What is the process for return or replacement of STP85NF55L?
All STP85NF55L units undergo pre-shipment inspection (PSI). If there is an issue with STP85NF55L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP85NF55L part is unused and in its original packaging.
Return procedure for STP85NF55L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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