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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8N80K5

Name: STP8N80K5
Brand: STMicroelectronics
SKU: STP8N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP8N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP8N80K5.pdf

Description:: MOSFET N CH 800V 6A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

STP8N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 800 V V_DS, 950 mΩ R_DS(on) max at 10 V V_GS, and 6 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (16.5 nC), 100% avalanche tested operation, and integrated Zener-protected gate, targeting high-efficiency switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STP8N80K5 datasheet, STP8N80K5 pinout, STP8N80K5 application, or STP8N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 1.14 °C/W junction-to-case thermal resistance, 4.5 V/ns diode recovery dv/dt rating, and IPAK (TO-251) package suitability for high-power density board layouts with forced-air or heatsink cooling.

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh K5 structure to achieve low specific on-resistance and minimized gate charge-critical for reducing conduction and switching losses in hard-switched PFC and main switch stages. Its rugged unclamped inductive switching capability (E_AS = 114 mJ at T_J = 25 °C) and 50 V/ns MOSFET dv/dt ruggedness support reliable operation under transient overvoltage conditions.

The integrated source-drain diode exhibits 300 ns reverse recovery time (T_J = 25 °C) and 3 µC Q_rr, enabling moderate-frequency flyback and resonant topologies without external snubbing. Gate threshold voltage is tightly specified (3–5 V), ensuring stable turn-on across temperature and compatible drive with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating.
R_DS(on) max	950 mΩ at V_GS = 10 V, I_D = 3 A - Enables <1.7 W conduction loss at 6 A, supporting thermally constrained designs.
Q_g	16.5 nC - Reduces gate drive power and enables >100 kHz operation with low-side driver ICs like STGAP2S.
E_AS	114 mJ - Supports robust unclamped inductive switching in flyback and forward converters without external clamping.
R_thJC	1.14 °C/W - Allows ~95 W dissipation with 108 °C ΔT to case, suitable for compact heatsink mounting in IPAK footprint.
dv/dt ruggedness	50 V/ns - Prevents false turn-on during fast voltage transients in high-noise industrial motor drives and inverters.
V_GS(th)	3–5 V - Ensures clean logic-level compatibility and immunity to noise-induced spurious turn-on.

Pinout & Package

STP8N80K5 is housed in an IPAK (TO-251) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, surface-mount compatibility, and a 16.48 mm typical height for low-profile board integration.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30 V drive; low 6 Ω intrinsic gate resistance minimizes ringing.
2 (D, TAB)	Drain / Heatsink Pad	Main high-voltage output node; electrically connected to metal tab for direct heatsink mounting and low-inductance return path.
3 (S)	Source	Power return and reference node; ties to ground or low-side switch node; carries full load current and diode recovery current.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by >40% vs. prior K3 generation, improving efficiency in 65–130 kHz SMPS.
Zener-protected gate	Integrated ±30 V gate oxide protection eliminates need for external gate Zener clamp in cost-sensitive designs.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥114 mJ, ensuring field reliability in unclamped inductive loads.
Low C_oss (50 pF) & C_rss (1 pF)	Minimizes Miller effect and improves hard-switching stability in high-voltage half-bridge configurations.
High dV/dt immunity (50 V/ns)	Enables use in noisy environments (e.g., industrial PLC outputs) without false triggering or shoot-through risk.

Applications

Industrial AC-DC Power Supplies

LED Streetlight Drivers

Use Scenario: Primary-side switch in 150–300 W offline flyback or quasi-resonant converter powering factory lighting systems.

IC Role / Device Role / Timing Role: High-voltage switching element handling rectified 375 V DC bus with 6 A peak current and 100 kHz switching.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and enable passive cooling in sealed outdoor enclosures.

Use Scenario: Constant-current buck-boost stage in smart LED streetlight driver operating from 277 VAC line.

IC Role / Device Role / Timing Role: Main power switch regulating LED string current up to 3 A with PWM dimming at 1–10 kHz.

Use Value: Avalanche ruggedness ensures survival during lightning-induced surges on municipal power grids.

Telecom Rectifier Modules

EV Charging Auxiliary Power Supplies

Use Scenario: Hold-up and primary switch in 48 V telecom rectifier with universal input and 200 W output.

IC Role / Device Role / Timing Role: High-reliability switching device operating continuously at 80 °C ambient with 6 A RMS current.

Use Value: 1.14 °C/W R_thJC allows direct heatsink mounting without thermal interface pads, simplifying assembly.

Use Scenario: Auxiliary DC-DC converter supplying 12 V/2 A control power in 7–22 kW EV on-board chargers.

IC Role / Device Role / Timing Role: Isolated forward converter primary switch handling 400–800 V DC link with burst-mode operation.

Use Value: Tight V_GS(th) distribution (3–5 V) ensures consistent startup timing across automotive temperature range (−40 to 125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF8N80K5	Same die, TO-220FP package; higher R_thJA (62 °C/W vs. 100 °C/W), no exposed tab.	Better suited for through-hole prototyping or lower-power (<100 W) designs with natural convection cooling.	Select when mechanical mounting constraints favor through-hole or when lower gate charge tolerance is acceptable.
IPP60R099C7	650 V rating, 99 mΩ R_DS(on), 650 V CoolMOS C7; lower voltage margin but superior FoM at <400 V bus.	Optimized for 380–400 V DC-link PFC stages, not universal 800 V offline primary switches.	Choose only if system maximum V_DS is confirmed ≤650 V and efficiency at light load is prioritized over surge margin.

Compared with STF8N80K5 and IPP60R099C7, STP8N80K5 uniquely balances 800 V standoff, IPAK thermal performance, and avalanche ruggedness-making it the only option qualified for universal-input 265 VAC systems requiring both high reliability and compact layout.

Availability

STP8N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for STP8N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP8N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline SMPS, PFC stages, and industrial motor control inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP8N80K5 supports 4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9210 Rev 6. This derating reflects thermal limits of the IPAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures common in enclosed power supplies.

Does STP8N80K5 include an integrated body diode, and what are its recovery characteristics?

Yes, STP8N80K5 integrates a fast-recovery source-drain diode with 300 ns reverse recovery time (T_J = 25 °C), 3 µC Q_rr, and 20 A I_RRM. These values are measured under standardized inductive-load conditions (I_SD = 6 A, di/dt = 100 A/µs, V_DD = 60 V), making it suitable for freewheeling in flyback and LLC converters.

Can STP8N80K5 be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (50 pF typ.) and C_rss (1 pF typ.), combined with 16.5 nC total gate charge, support efficient ZVS operation in phase-shifted full-bridge and LLC resonant converters operating up to 300 kHz, provided gate drive strength and dead-time control meet design requirements.

Is the IPAK package lead-free and RoHS-compliant?

Yes, STP8N80K5 is supplied in an ECOPACK2-compliant IPAK package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device is halogen-free and qualifies for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C.

STP8N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP8N80K5 FAQ

1.How can I place an order for STP8N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8N80K5 reliable?

The price and inventory of STP8N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8N80K5 is usually 5 days.

3.What payment methods are accepted for STP8N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8N80K5?

STP8N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8N80K5?

For technical support, including STP8N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8N80K5 requirements.

6.How does Aetrix verify that STP8N80K5 is sourced from the original manufacturer or authorized distributors?

All STP8N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8N80K5 meets industry standards.

7.What is the process for return or replacement of STP8N80K5?

All STP8N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP8N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8N80K5 part is unused and in its original packaging.

Return procedure for STP8N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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