STMicroelectronics STP8N90K5

Overview

STP8N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 900 V drain-source voltage, 680 mΩ max R_DS(on) at V_GS = 10 V and I_D = 4 A, and 8 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (11 nC), 100% avalanche tested performance, and Zener-protected gate for robust switching in high-efficiency SMPS and industrial inverters.

For engineers reviewing the STP8N90K5 datasheet, STP8N90K5 pinout, STP8N90K5 application, or STP8N90K5 equivalent, key selection criteria include its 900 V rating, 600–680 mΩ R_DS(on), 11 nC total gate charge, 2.7 A repetitive avalanche current, and TO-220 package thermal resistance of 0.96 °C/W junction-to-case - all critical for high-density HV power stage design.

Technical Context

This device employs ST's proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its 426 pF input capacitance (C_iss) and 1.2 pF reverse transfer capacitance (C_rss) enable fast, controllable switching with low EMI generation under hard-switching conditions.

The MOSFET integrates a source-drain diode with 371 ns typical reverse recovery time (T_J = 25 °C) and 4.27 µC Q_rr, supporting snubberless operation in flyback and resonant topologies. Its 50 V/ns MOSFET dv/dt ruggedness ensures reliable operation during voltage transients in high-side configurations.

Key Specifications

Pinout & Package

STP8N90K5 is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when used in non-isolated topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8N90K5, STW8N90K5 offers superior thermal performance in high-power layouts, while IPP60R950C6 trades voltage rating and gate protection for lower unit cost in sub-500 V applications - making STP8N90K5 optimal for universal 900 V ruggedness in space-constrained TO-220 designs.

Availability

STP8N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, server SMPS, and EV onboard chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for STP8N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capability.

STP8N90K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial, renewable energy, and EV infrastructure applications.

FAQ

Is STP8N90K5 suitable for zero-voltage switching (ZVS) topologies?

Yes. With 426 pF C_iss, 41 pF C_oss, and 1.2 pF C_rss, STP8N90K5 exhibits low capacitive losses and predictable turn-on behavior under soft-switching conditions. Its 11 nC Q_g enables precise ZVS timing control in phase-shifted full-bridge converters operating up to 200 kHz, provided gate drive strength exceeds 1.5 A peak.

What is the maximum recommended gate resistor value for reliable switching?

For 100 kHz operation with 11 nC Q_g, a 10 Ω gate resistor limits peak gate current to ~1 A and achieves ~110 ns turn-on delay, staying within safe SOA limits. Values above 22 Ω increase switching losses significantly; below 4.7 Ω require gate driver capable of ≥2 A peak current to avoid overshoot.

Does the integrated Zener protection eliminate need for external gate clamping?

Yes - the monolithic Zener diode clamps V_GS between ±30 V, protecting against ESD and layout-induced transients. However, in high-noise environments (e.g., adjacent to IGBTs), a 12 V TVS across gate-source is still recommended to suppress sub-10 ns spikes that may bypass internal protection.

Can STP8N90K5 replace STP7NK90Z in existing designs?

No - STP7NK90Z uses older SuperMESH™ technology with 1.2 Ω R_DS(on) and 25 nC Q_g. While pin-compatible, STP8N90K5's 680 mΩ R_DS(on) and 11 nC Q_g reduce both conduction and switching losses by >50%, but require gate drive strength verification and SOA revalidation due to higher peak currents enabled by faster switching.