STMicroelectronics STP8NK80ZFP

Overview

STP8NK80ZFP from STMicroelectronics is a Zener-protected N-channel 800 V, 1.3 Ω typ. (1.5 Ω max.), 6.2 A SuperMESH Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, lighting ballasts, and AC motor drives where high dv/dt immunity and avalanche ruggedness are critical.

For engineers reviewing the STP8NK80ZFP datasheet, STP8NK80ZFP pinout, STP8NK80ZFP application, or STP8NK80ZFP equivalent, this device delivers verified 4.5 V/ns peak diode recovery dv/dt capability, 300 mJ single-pulse avalanche energy, and gate charge of 46 nC - key parameters for hard-switched flyback and resonant converter design.

Technical Context

This MOSFET employs ST's SuperMESH process, an optimized evolution of PowerMESH, delivering reduced R_DS(on) while maintaining high breakdown voltage and intrinsic capacitance minimization (C_iss = 1320 pF, C_oss = 143 pF). Its Zener-protected gate ensures ±30 V V_GS tolerance and 4 kV HBM ESD rating.

The device is characterized for operation up to 150 °C junction temperature, with thermal resistance R_thJC = 0.89 °C/W (TO-220), enabling stable conduction at 3.9 A continuous current at T_C = 100 °C. Its 460 ns reverse recovery time (T_J = 150 °C) supports fast inductive switching with controlled diode commutation.

Key Specifications

Pinout & Package

STP8NK80ZFP uses the TO-220 package (type A), with isolated tab (non-conductive mounting surface), rated for 2.5 kV RMS insulation between leads and heat sink. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8NK80Z (TO-220FP) and STW8NK80Z (TO-247), STP8NK80ZFP uniquely balances electrical isolation, thermal performance (R_thJC = 0.89 °C/W), and TO-220 footprint - making it optimal for space-constrained, safety-critical AC-DC and motor drive designs requiring reinforced insulation.

Availability

STP8NK80ZFP is available at Aetrix Electronics and suitable for AC-DC switched-mode power supplies, electronic lighting ballasts, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for STP8NK80ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP8NK80ZFP belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability high-voltage switching in offline power conversion and motor control applications.

FAQ

Is STP8NK80ZFP pin-compatible with STP8NK80Z?

No - STP8NK80Z uses TO-220FP (type B) with isolated tab and different leadframe geometry, while STP8NK80ZFP uses TO-220 (type A) with non-isolated tab. Pin numbering is identical (G-D-S), but mechanical mounting, thermal path, and creepage differ significantly. PCB layout and heatsink interface must be redesigned.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the device supports 3.9 A continuous drain current. For pulse operation, SOA is limited by both thermal constraints and avalanche energy: peak pulse current must stay below 24.8 A, and single-pulse avalanche energy must not exceed 300 mJ to avoid permanent degradation.

Can STP8NK80ZFP replace an IGBT in a 10 kHz motor inverter stage?

Yes - its 6.2 A continuous rating, 1.3 Ω R_DS(on), and 460 ns body diode t_rr support 10 kHz hard-switched operation in sub-2 kW inverters. However, unlike IGBTs, it lacks tail current; ensure gate drive strength (≥1 A peak) and layout inductance are minimized to prevent voltage overshoot during turn-off.

Does the Zener protection cover negative V_GS transients?

Yes - the integrated gate-source Zener clamps both positive and negative excursions, supporting ±30 V absolute maximum V_GS. This protects against negative spikes induced by transformer leakage inductance or layout ground bounce, confirmed by 4 kV HBM ESD rating and gate leakage spec of ±10 µA at ±20 V.