Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8NM50N

Name: STP8NM50N
Brand: STMicroelectronics
SKU: STP8NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP8NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP8NM50N.pdf

Description:: MOSFET N-CH 500V 5A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:813

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP8NM50N from STMicroelectronics is an N-channel 500 V, 5 A Power MOSFET in TO-220 package, built on MDmesh™ II technology. It delivers 0.73 Ω typical R_DS(on), 14 nC total gate charge, and 15 V/ns dv/dt ruggedness-designed for high-efficiency flyback and resonant SMPS in industrial AC-DC adapters.

For engineers reviewing the STP8NM50N datasheet, STP8NM50N pinout, STP8NM50N application, or STP8NM50N equivalent, key selection criteria include avalanche-rated operation (2 A repetitive), low C_iss (364 pF), and thermal resistance of 2.78 °C/W (junction-to-case) enabling compact heatsink designs in 65–300 W power supplies.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V V_DS rating and 15 V/ns dv/dt capability support robust operation in discontinuous and quasi-resonant converters with high-voltage transients.

The device integrates a fast-recovery body diode (t_rr = 187 ns at T_j = 25 °C) and supports unclamped inductive switching up to 140 mJ single-pulse avalanche energy-enabling reliable operation without external snubbers in clamp-based topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in universal-input (85–265 V_AC) offline SMPS with ≥20% voltage margin.
R_DS(on) max	0.79 Ω @ T_c = 25 °C - Limits conduction loss to ≤10 W at 5 A DC, enabling thermally constrained board layouts.
Q_g	14 nC - Enables efficient 100–500 kHz switching with <5 W gate drive loss using standard 10 V logic-level drivers.
t_r/t_f	4.4 ns / 9 ns - Reduces switching transition time, minimizing overlap loss in hard-switched topologies.
R_thj-case	2.78 °C/W - Allows 45 W continuous dissipation with ≤125 °C case temperature using minimal heatsinking.
E_AS	140 mJ - Sustains single-pulse inductive energy without failure, eliminating need for external avalanche clamping.

Pinout & Package

TO-220 package with isolated tab (drain-connected). Standard 3-lead through-hole mounting; tab serves as primary heat path and electrical drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Tab (center)	Drain (D)	Electrically connected to drain; must be insulated from chassis unless circuit ground reference permits direct mounting.
Lead 1 (left)	Gate (G)	High-impedance control input; requires <5.4 Ω series gate resistor to damp oscillation during fast switching.
Lead 3 (right)	Source (S)	Power return node; connects to primary ground plane and provides reference for gate drive loop.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 2 A repetitive avalanche current and 140 mJ single-pulse energy handling under real-world overvoltage stress.
Low gate charge (Q_g = 14 nC)	Reduces driver power consumption and enables use of low-cost, low-current gate drivers in cost-sensitive SMPS designs.
Low input capacitance (C_iss = 364 pF)	Minimizes Miller effect and improves EMI behavior in high-frequency switching applications above 200 kHz.
MDmesh™ II vertical structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (0.73 Ω × 14 nC = 10.2), optimizing efficiency across light-to-full load conditions.

Applications

Industrial AC-DC Adapters

LED Driver Power Stages

Use Scenario: 150 W open-frame power supply for PLC I/O modules operating from 85–265 V_AC.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter, switching at 65–120 kHz with valley switching control.

Use Value: 0.73 Ω R_DS(on) and 14 nC Q_g reduce total power loss to <8.5 W at full load, enabling natural convection cooling.

Use Scenario: Constant-current LED driver for high-bay lighting (100–200 W), requiring high PF and THD <15%.

IC Role / Device Role / Timing Role: Active switch in boost PFC pre-regulator stage, operating in continuous conduction mode at 65 kHz.

Use Value: 15 V/ns dv/dt rating ensures stable operation during line-voltage zero-crossing transients without false triggering.

Telecom DC-DC Bricks

Motor Control H-Bridge Legs

Use Scenario: 48 V input, 12 V/10 A output isolated DC-DC brick for base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver in active-clamp forward topology.

Use Value: Fast body diode (t_rr = 187 ns) reduces reverse recovery loss by >30% versus standard silicon diodes, improving efficiency by 0.8%.

Use Scenario: Low-side switch in 24 V BLDC motor gate driver for HVAC blowers (≤500 W).

IC Role / Device Role / Timing Role: High-speed switching element in half-bridge leg, driven by isolated gate driver with 100 ns propagation delay.

Use Value: 20 A pulsed drain current (I_DM) supports peak torque surge currents without SOA derating or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK50Z	Higher R_DS(on) (0.95 Ω max), Zener-protected gate, lower Q_g (11 nC)	Better ESD robustness but higher conduction loss; suited for lower-power (<65 W) designs where gate protection is critical	Select when gate oxide reliability in high-noise environments outweighs efficiency targets.
FDPF18N50	Same V_DS (500 V), higher R_DS(on) (0.78 Ω typ.), higher C_iss (520 pF)	Lower switching speed due to higher capacitance; requires stronger gate drive for same frequency	Choose only if legacy design compatibility or distributor stock availability drives BOM continuity.

Compared with STP7NK50Z and FDPF18N50, STP8NM50N offers the lowest R_DS(on) × Q_g FoM (10.2) and highest dv/dt immunity (15 V/ns), making it optimal for high-density, high-efficiency 100–300 W SMPS where thermal headroom and EMI are constrained.

Availability

STP8NM50N is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and telecom DC-DC bricks requiring stable component supply and long-term production support.

Supply support for STP8NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and PFC stages demanding low R_DS(on), low Q_g, and rugged avalanche performance.

FAQ

Is STP8NM50N suitable for zero-voltage switching (ZVS) topologies?

Yes. With 364 pF C_iss, 33 pF C_oss, and 1.2 pF C_rss, STP8NM50N exhibits low capacitive nonlinearity and predictable turn-on timing-enabling reliable ZVS operation in LLC resonant converters up to 300 kHz when paired with appropriate resonant tank design and dead-time control.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 3 A at T_case = 100 °C, as specified in Table 1 of DS6808 Rev 7. This reflects thermal derating due to junction-to-case thermal resistance (2.78 °C/W) and maximum rated junction temperature (150 °C).

Does STP8NM50N have integrated gate protection?

No. STP8NM50N lacks integrated gate Zener protection. Its ±25 V absolute maximum V_GS rating requires external gate clamping (e.g., 15 V TVS) in noisy environments. This differs from protected variants like STP7NK50Z, which integrate gate Zener diodes.

Can STP8NM50N replace STD8NM50N in PCB layout?

No-direct replacement is not mechanically feasible. STD8NM50N uses DPAK (TO-252) surface-mount packaging, while STP8NM50N uses through-hole TO-220. Pad layout, thermal vias, and mounting hardware differ fundamentally; redesign is required for substitution.

STP8NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 790mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 364 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP8NM50N FAQ

1.How can I place an order for STP8NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NM50N reliable?

The price and inventory of STP8NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NM50N is usually 5 days.

3.What payment methods are accepted for STP8NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NM50N?

STP8NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NM50N?

For technical support, including STP8NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NM50N requirements.

6.How does Aetrix verify that STP8NM50N is sourced from the original manufacturer or authorized distributors?

All STP8NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NM50N meets industry standards.

7.What is the process for return or replacement of STP8NM50N?

All STP8NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP8NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NM50N part is unused and in its original packaging.

Return procedure for STP8NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…