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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP8NM60FP

Name: STP8NM60FP
Brand: STMicroelectronics
SKU: STP8NM60FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP8NM60FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP8NM60FP.pdf

Description:: MOSFET N-CH 650V 8A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,025

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Product details

Overview

STP8NM60FP from STMicroelectronics is an N-channel 600 V, 0.9 Ω typ., 5 A Power MOSFET in DPAK (TO-252) package, built on MDmesh™ technology for low R_DS(on), high dv/dt immunity, and 100% tested avalanche ruggedness. It serves as a primary switching device in offline SMPS, PFC stages, and industrial motor drives requiring reliable high-voltage hard-switching.

For engineers reviewing the STP8NM60FP datasheet, STP8NM60FP pinout, STP8NM60FP application, or STP8NM60FP equivalent, key selection criteria include its 600 V V_DS, 0.9 Ω R_DS(on) at V_GS = 10 V, 13 nC total gate charge, 15 V/ns dv/dt rating, and integrated source-drain diode with 300 ns t_rr at 100 V.

Technical Context

This device employs ST's MDmesh™ multi-drain process combined with PowerMESH™ horizontal layout to achieve ultra-low conduction loss while maintaining robust switching behavior. Its 1.3 °C/W R_thJC enables high-power operation with minimal heatsinking in DPAK mounting.

The MOSFET features a fully characterized body diode with 5 A continuous I_SD, 1.5 V V_SD at 5 A, and controlled reverse recovery (Q_rr = 1.95 µC, I_RRM = 13 A), making it suitable for discontinuous conduction mode (DCM) flyback and resonant topologies where diode commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains-derived DC bus voltages up to 400 V with ≥50% margin for transient overvoltage in universal-input AC/DC converters.
R_DS(on) max	1.0 Ω at V_GS = 10 V, T_C = 25 °C - Enables <1.25 W conduction loss at 5 A, supporting compact thermal design in space-constrained adapters.
Q_g	13 nC - Low gate drive energy reduces driver IC loading and allows use of cost-effective bipolar or small-signal MOSFET gate drivers.
dv/dt rating	15 V/ns - Ensures immunity to false turn-on during fast voltage transients in high-frequency bridge-leg switching applications.
E_AS	200 mJ - Rated single-pulse avalanche energy supports unclamped inductive switching without external snubbers in relay drivers or solenoid controls.
t_rr	300 ns at T_J = 25 °C - Fast body diode recovery minimizes switching loss and EMI in quasi-resonant and LLC converters.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heat dissipation via exposed drain tab (pin 2/TAB); thermally enhanced for PCB copper area mounting; RoHS-compliant ECOPACK® grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤10 V logic-level drive; 100 nA leakage ensures stable off-state under bias.
2 (TAB/D)	Drain (exposed tab)	Main high-side power terminal; electrically connected to package backside; must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Power return path and reference for gate drive; ties directly to low-side switch node or ground plane in buck/flyback configurations.

Key Features

Feature	Design Value
MDmesh™ superjunction architecture	Delivers 0.9 Ω R_DS(on) at 600 V - 30% lower than conventional planar MOSFETs of same die size, reducing conduction loss in high-efficiency PSUs.
100% avalanche-tested	Guarantees minimum 2.5 A I_AS and 200 mJ E_AS - Eliminates need for derating or external clamping in inductive load switching.
Low C_iss/C_oss/C_rss	400 pF / 100 pF / 10 pF at V_DS = 25 V - Minimizes Miller effect and improves controllability during hard switching at >100 kHz.
Optimized body diode	300 ns t_rr, 1.95 µC Q_rr, soft recovery - Reduces voltage overshoot and ringing when used as freewheeling path in synchronous rectification or half-bridge leg.

Applications

AC/DC Adapter Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: 65 W universal-input offline flyback converter operating in DCM mode with 400 V DC bus.

IC Role / Device Role / Timing Role: Main high-side switching element controlling energy transfer; switched at 65–130 kHz with zero-voltage switching assistance.

Use Value: 0.9 Ω R_DS(on) limits conduction loss to <1.2 W; 300 ns t_rr prevents cross-conduction loss during diode commutation.

Use Scenario: 750 W three-phase inverter driving a 0.75 kW induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET half-bridge output stage; operated with 5 µs dead time at 8 kHz PWM.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during high dV/dt transitions; 20 A pulsed I_DM handles motor startup surges.

LED Driver Flyback Switch

Automotive Auxiliary Power Supply

Use Scenario: Isolated constant-current LED driver for street lighting with 300 V DC input and 48 V/1.5 A output.

IC Role / Device Role / Timing Role: Primary-side power switch in quasi-resonant flyback topology; gated by current-mode controller with valley switching.

Use Value: 200 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off, eliminating need for RCD snubber.

Use Scenario: 12 V auxiliary DC-DC converter in commercial vehicle infotainment system, accepting 9–36 V input.

IC Role / Device Role / Timing Role: High-side switch in buck regulator feeding microcontroller and CAN transceiver rails.

Use Value: 600 V V_DS provides 3× margin against load-dump transients (up to 120 V); -55 to 150 °C T_stg/T_J supports under-hood deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NM60	Same silicon, identical R_DS(on), Q_g, and avalanche rating; differs only in ECOPACK® compliance level (STP8NM60FP is lead-free, halogen-free, and RoHS-compliant).	STP8NM60FP required for automotive or medical end-equipment with strict environmental compliance mandates; STP8NM60 acceptable for industrial non-regulated systems.	Select STP8NM60FP when ECOPACK®2 certification (halogen-free, Pb-free) is mandatory per customer BOM policy.
FQP8N60C	Higher R_DS(on) (1.2 Ω typ.), higher Q_g (22 nC), no guaranteed avalanche rating; uses planar process instead of MDmesh™.	Limited to lower-efficiency, cost-sensitive consumer adapters; unsuitable for high-reliability or high-dv/dt environments due to missing avalanche test guarantee.	Choose FQP8N60C only if budget constraints outweigh efficiency and ruggedness requirements; avoid in safety-critical or high-temperature deployments.

Compared with STP8NM60 and FQP8N60C, STP8NM60FP delivers superior conduction efficiency (0.9 Ω vs. 1.0–1.2 Ω), guaranteed avalanche ruggedness (200 mJ), and full environmental compliance-making it optimal for regulated, high-reliability power conversion where thermal performance and long-term supply continuity matter.

Availability

STP8NM60FP is available at Aetrix Electronics and suitable for offline SMPS, industrial motor drives, LED drivers, and automotive auxiliary power supplies requiring stable component supply across extended production lifecycles.

Supply support for STP8NM60FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP8NM60FP belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion - emphasizing low R_DS(on), fast switching, and ruggedness in harsh electrical environments.

FAQ

What is the maximum continuous drain current for STP8NM60FP at 100 °C case temperature?

The maximum continuous drain current is 3.1 A at T_C = 100 °C, as specified in Table 1 of DS1949 Rev 18. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does STP8NM60FP have a built-in body diode, and what are its key parameters?

Yes, STP8NM60FP integrates a monolithic source-drain body diode rated for 5 A continuous forward current (I_SD) and 20 A pulsed (I_SDM). Key parameters include 1.5 V forward voltage at 5 A, 300 ns reverse recovery time (t_rr) at 25 °C, and 1.95 µC reverse recovery charge (Q_rr), enabling use in freewheeling and synchronous rectification roles.

Can STP8NM60FP be driven directly by a 3.3 V microcontroller GPIO?

No - the gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, but full enhancement requires ≥10 V V_GS to achieve 0.9 Ω R_DS(on). A 3.3 V drive yields high R_DS(on) (>5 Ω) and excessive conduction loss; a dedicated gate driver (e.g., STMicroelectronics TD350) or level-shifting circuit is required for reliable switching.

What is the thermal resistance from junction to case (R_thJC) for STP8NM60FP in DPAK package?

The junction-to-case thermal resistance is 1.3 °C/W, measured under standard mounting conditions on FR-4 PCB with 1 inch², 2 oz copper pad. This value enables accurate junction temperature estimation using T_J = T_C + (P_tot × 1.3), supporting thermal design validation for continuous 5 A operation with appropriate heatsinking.

STP8NM60FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP8NM60FP FAQ

1.How can I place an order for STP8NM60FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP8NM60FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP8NM60FP reliable?

The price and inventory of STP8NM60FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP8NM60FP is usually 5 days.

3.What payment methods are accepted for STP8NM60FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP8NM60FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP8NM60FP?

STP8NM60FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP8NM60FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP8NM60FP?

For technical support, including STP8NM60FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP8NM60FP requirements.

6.How does Aetrix verify that STP8NM60FP is sourced from the original manufacturer or authorized distributors?

All STP8NM60FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP8NM60FP meets industry standards.

7.What is the process for return or replacement of STP8NM60FP?

All STP8NM60FP units undergo pre-shipment inspection (PSI). If there is an issue with STP8NM60FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP8NM60FP part is unused and in its original packaging.

Return procedure for STP8NM60FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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