STMicroelectronics STP8NM60N

Overview

STP8NM60N from STMicroelectronics is an N-channel 600 V, 7 A MDmesh™ II Power MOSFET in TO-220 package with R_DS(on) = 0.56 Ω (typ), Q_g = 19 nC, and 100% avalanche tested. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives requiring low conduction loss and fast switching.

For engineers reviewing the STP8NM60N datasheet, STP8NM60N pinout, STP8NM60N application, or STP8NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.56 Ω R_DS(on) at V_GS = 10 V, 19 nC total gate charge, 1.78 °C/W R_thj-case, and avalanche ruggedness (E_AS = 200 mJ).

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both on-resistance and gate charge. Its low C_iss (560 pF) and C_oss (37 pF) support high-frequency operation up to 100 kHz in hard-switched converters.

The integrated source-drain diode exhibits t_rr = 310 ns (T_j = 25 °C) and Q_rr = 2.40 µC, enabling use in quasi-resonant and ZVS topologies. Gate threshold voltage V_GS(th) is tightly specified at 2–4 V, ensuring reliable turn-on with standard 10 V gate drivers.

Key Specifications

Pinout & Package

STP8NM60N uses the TO-220 package (3-pin, straight lead, insulated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP8NM60N, STP8NK60Z trades 16% higher gate charge for gate Zener protection, while FQP8N60C lacks avalanche rating and delivers 16% higher conduction loss-making STP8NM60N optimal for high-reliability, high-efficiency 600 V switching where ruggedness and low Q_g are prioritized.

Availability

STP8NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and PFC boost converters requiring stable component supply and long-term production continuity.

Supply support for STP8NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies and industrial motor controls demanding low R_DS(on), low Q_g, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP8NM60N supports 4.3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to junction-to-case thermal resistance (1.78 °C/W) and maximum allowable junction temperature (150 °C), making it suitable for compact heatsink designs in enclosed enclosures.

Is the TO-220 tab electrically isolated from the leads?

No-the metal tab of the STP8NM60N TO-220 package is internally connected to the Drain terminal (Pin 2). Electrical isolation from the heatsink is mandatory unless the circuit design intentionally references the heatsink to the high-side DC bus. ST recommends using an isolating washer and thermal pad rated for ≥2500 V RMS insulation.

Does STP8NM60N have a built-in gate protection diode?

No, the STP8NM60N does not integrate a gate-source Zener diode. Its absolute maximum V_GS rating is ±25 V, and gate oxide integrity relies on external clamping (e.g., 15 V TVS or Zener) when driving from non-regulated sources or in noisy environments. This differs from the STP8NK60Z variant, which includes integrated gate protection.

Can STP8NM60N replace STP8NK60Z in existing designs?

Direct replacement is possible only if the application does not require gate Zener protection and can tolerate slightly lower gate drive margin (±25 V vs. ±30 V for STP8NK60Z). However, STP8NM60N offers 14% lower Q_g and identical R_DS(on), improving efficiency-but gate drive circuitry must ensure V_GS stays within ±25 V under all transients.