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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP9N60M2

Name: STP9N60M2
Brand: STMicroelectronics
SKU: STP9N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP9N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP9N60M2.pdf

Description:: MOSFET N-CH 600V 5.5A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP9N60M2 from STMicroelectronics is an N-channel 600 V, 0.78 Ω max, 5.5 A Power MOSFET in TO-220 package, built on MDmesh™ M2 technology for high-efficiency SMPS and PFC stages. It delivers 60 W total power dissipation, 100% avalanche tested performance, and Zener-protected gate drive-enabling robust operation in offline AC-DC adapters and industrial motor drives.

For engineers reviewing the STP9N60M2 datasheet, STP9N60M2 pinout, STP9N60M2 application, or STP9N60M2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, C_oss profile for soft-switching design, dv/dt ruggedness (50 V/ns), avalanche energy rating (105 mJ), and thermal resistance (R_thj-case = 2.08 °C/W).

Technical Context

This device employs a strip-based MDmesh™ M2 vertical structure to minimize conduction loss while optimizing switching speed and output capacitance linearity. Its low gate charge (Q_g = 10 nC) and controlled C_oss (18 pF typ.) support high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated source-drain diode features 265 ns reverse recovery time (T_j = 25 °C) and 1.65 µC Q_rr, enabling reliable operation in continuous-conduction-mode (CCM) PFC. The 15 V/ns diode recovery dv/dt rating ensures stability under fast commutation conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full 400 VAC rectified input with margin for surge transients in universal-input SMPS.
R_DS(on) max	0.78 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 5.5 A DC, critical for thermal management in enclosed adapters.
I_D cont	5.5 A @ T_case = 25 °C - Supports >60 W output in flyback or LLC converters with standard heatsinking.
Q_g	10 nC - Reduces gate driver power loss and enables use of low-cost bipolar drivers in cost-sensitive designs.
C_oss	18 pF typ. - Low nonlinear output capacitance improves zero-voltage switching (ZVS) predictability in resonant converters.
E_AS	105 mJ - Guarantees single-pulse unclamped inductive switching survival without external snubbers in PFC boost stages.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate switching in high-noise industrial environments.

Pinout & Package

TO-220 package with isolated tab (DPAK/TO-220/IPAK variants share identical die but differ in thermal and mounting characteristics). Tab is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate (Pin 1)	Control electrode for channel formation	High-impedance input; sensitive to ESD-requires series gate resistor (≥10 Ω) and TVS clamping.
Source (Pin 2)	Reference node for gate drive and current return	Low-inductance connection essential for stable switching; must be routed close to gate driver ground.

Key Features

Feature	Design Value
Extremely low gate charge	Q_g = 10 nC enables <1 W gate driver loss at 100 kHz, reducing driver IC size and cost.
Optimized C_oss profile	C_oss = 18 pF with linear voltage dependence improves ZVS timing accuracy in LLC resonant converters.
100% avalanche tested	Each unit validated for 105 mJ single-pulse avalanche energy-eliminates need for external clamping in boost PFC.
Zener-protected gate	Integrated 25 V gate-body Zener prevents overvoltage damage during layout-induced ringing or hot-plug events.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge IGBT gate driver auxiliary supply using flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch regulating 12 V bias rail for gate drivers in 3 kW servo drives.

Use Value: 0.78 Ω R_DS(on) limits conduction loss to <1.2 W at 4.5 A, enabling compact heatsink-free design in space-constrained enclosures.

Use Scenario: Active clamp forward converter in 80 PLUS Titanium server power supply.

IC Role / Device Role / Timing Role: Main switch operating at 150 kHz with synchronous rectification control.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during fast voltage transitions across transformer leakage inductance.

Universal Input AC-DC Adapters

Photovoltaic String Inverters

Use Scenario: 65 W USB-C PD adapter with quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: High-side switch in primary side, driven by QR controller with valley switching.

Use Value: 265 ns t_rr and 1.65 µC Q_rr minimize diode recovery loss, improving efficiency by 0.4% at full load vs. legacy 650 V MOSFETs.

Use Scenario: DC-DC boost stage in string-level PV optimizer handling 1000 V DC input.

IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode at 40 kHz.

Use Value: 600 V V_DS rating with 100% avalanche test ensures reliability under lightning-induced surges common in rooftop solar installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω (lower), but V_DS = 600 V same; Q_g = 37 nC (3.7× higher); TO-220FP package.	Better conduction loss at high current (>8 A), but higher gate drive loss and slower switching due to larger Q_g.	Select when thermal budget allows lower R_DS(on) and gate drive capability supports 37 nC charge.
FDPF18N50	R_DS(on) = 0.32 Ω (lower), V_DS = 500 V (100 V lower); Q_g = 42 nC; TO-220F package with insulated tab.	Not suitable for 400 VAC rectified inputs; requires derating or additional overvoltage protection.	Only consider for 230 VAC-only systems where 500 V rating provides sufficient margin.

Compared with IPP60R099C7 and FDPF18N50, STP9N60M2 offers balanced trade-offs: moderate R_DS(on) (0.78 Ω), low Q_g (10 nC), and full 600 V rating-making it optimal for cost-sensitive, thermally constrained 65–100 W SMPS where gate drive simplicity and surge immunity are prioritized over ultra-low conduction loss.

Availability

STP9N60M2 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, universal-input AC-DC adapters, and photovoltaic string inverters requiring stable component supply across multi-year production cycles.

Supply support for STP9N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP9N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 65–300 kHz in demanding industrial and computing environments.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP9N60M2 supports 3.6 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS9553 Rev 3. This derating reflects thermal limitations of the TO-220 package's 2.08 °C/W junction-to-case resistance and ensures safe operation within the SOA boundary at elevated ambient temperatures.

Does STP9N60M2 include integrated gate protection?

Yes-STP9N60M2 integrates a Zener diode between gate and source, rated for ±25 V gate-source voltage (V_GS). This protects against transient overvoltage events such as layout-induced ringing or ESD, eliminating the need for external gate Zener clamps in most applications.

Can STP9N60M2 replace STP12NM60ND in existing designs?

No-STP12NM60ND has 0.53 Ω R_DS(on) and 12 A I_D, while STP9N60M2 is rated 0.78 Ω and 5.5 A. Substituting would increase conduction loss by ~47% and reduce current capability by ~54%, risking thermal runaway or insufficient peak current in motor drive or PFC applications.

What is the recommended gate resistor value for 100 kHz operation?

A 10 Ω series gate resistor is recommended for 100 kHz hard-switched operation, balancing switching speed (minimizing t_r/t_f) and gate oscillation damping. This value is derived from Q_g = 10 nC and typical driver output impedance, ensuring <100 ns rise/fall times while suppressing parasitic resonance observed in Figure 20 of DS9553.

STP9N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 780mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP9N60M2 FAQ

1.How can I place an order for STP9N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP9N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP9N60M2 reliable?

The price and inventory of STP9N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP9N60M2 is usually 5 days.

3.What payment methods are accepted for STP9N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP9N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP9N60M2?

STP9N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP9N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP9N60M2?

For technical support, including STP9N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP9N60M2 requirements.

6.How does Aetrix verify that STP9N60M2 is sourced from the original manufacturer or authorized distributors?

All STP9N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP9N60M2 meets industry standards.

7.What is the process for return or replacement of STP9N60M2?

All STP9N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP9N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP9N60M2 part is unused and in its original packaging.

Return procedure for STP9N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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