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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP9N65M2

Name: STP9N65M2
Brand: STMicroelectronics
SKU: STP9N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP9N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP9N65M2.pdf

Description:: MOSFET N-CH 650V 5A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:963

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Product details

Overview

STP9N65M2 from STMicroelectronics is an N-channel 650 V, 0.90 Ω (max), 5 A Power MOSFET in TO-220 package, built on MDmesh M2 technology for high-efficiency SMPS, PFC stages, and industrial AC-DC converters. It delivers low gate charge (10.3 nC), optimized COSS profile (18 pF), and 100% avalanche-tested ruggedness.

For engineers reviewing the STP9N65M2 datasheet, STP9N65M2 pinout, STP9N65M2 application, or STP9N65M2 equivalent, this page provides verified pin configuration, thermal resistance (2.08 °C/W junction-to-case), safe operating area limits, Zener-protected body diode behavior, and real-world switching performance metrics including trr = 276 ns and Qrr = 1.7 µC.

Technical Context

This device employs a strip-based MDmesh M2 vertical structure to achieve low RDS(on) and reduced output capacitance energy (EOSS = 2.0 mJ at 500 V). Its gate threshold voltage (2–4 V) and intrinsic gate resistance (6.6 Ω) support stable drive with standard 10 V logic-level gate drivers.

The integrated Zener-protected body diode enables robust unclamped inductive switching, with specified dv/dt ruggedness of 50 V/ns (VDS ≤ 520 V) and single-pulse avalanche energy EAS = 105 mJ - critical for flyback and resonant converter reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input designs with ≥30% margin for surge and ringing
R_DS(on) max	0.90 Ω at V_GS = 10 V, I_D = 2.5 A - enables <1.5 W conduction loss at 5 A continuous drain current
Q_g	10.3 nC - reduces gate driver power demand and enables >100 kHz hard-switching operation
C_oss	18 pF - contributes to low stored output energy (E_OSS = 2.0 mJ @ 500 V), minimizing turn-off loss
t_r/t_f	6.6 ns / 18 ns - supports fast, low-loss transitions in LLC and active-clamp topologies
E_AS	105 mJ - ensures reliable operation under transient overloads without external snubbers
R_thj-case	2.08 °C/W - allows 60 W dissipation at T_C = 25 °C with minimal heatsink requirement

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-terminal configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; Zener-protected against ±25 V transients
Pin 2 (Tab)	Drain	Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits direct mounting
Pin 3	Source	Power return path and gate reference; ties to PCB ground plane; defines local V_GS reference for driver placement

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior-generation 650 V MOSFETs
Zener-protected body diode	Enables self-protected freewheeling in boost PFC without external clamping diodes
100% avalanche tested	Guarantees single-pulse ruggedness up to 105 mJ - eliminates need for design margin validation
Low C_oss energy profile	C_oss,eq = 109 pF yields 40% lower turn-off loss than comparable 650 V devices in 300–500 V V_DS range
dv/dt ruggedness	50 V/ns rating ensures immunity to false turn-on during high-slew-rate switching in half-bridge configurations

Applications

Industrial AC-DC Power Supply

Server PSU Primary Switch

Use Scenario: 1 kW telecom rectifier with active clamp forward topology operating at 100 kHz.

IC Role / Device Role / Timing Role: Main switch handling 5 A RMS primary current; synchronized with controller's 100 kHz gate signal.

Use Value: Low Q_g and fast t_f reduce driver losses and enable precise dead-time control, improving efficiency by 0.8% at full load.

Use Scenario: 80 PLUS Titanium server PSU using asymmetric half-bridge with 48 V input.

IC Role / Device Role / Timing Role: High-side switch in primary leg; subjected to 600 V blocking and 5 A peak current.

Use Value: 650 V V_DS rating and 50 V/ns dv/dt ruggedness prevent spurious turn-on during cross-conduction events.

Motor Drive Inverter Stage

EV Onboard Charger PFC

Use Scenario: 3-phase 7.5 kW industrial inverter driving permanent magnet motor.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz PWM inverter stage; handles 5 A continuous phase current.

Use Value: Avalanche-rated construction withstands inductive kickback during fault conditions without external protection.

Use Scenario: Two-stage OBC with boost PFC front-end operating at 100 kHz and 400 V DC bus.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode; conducts 5 A average current with 20 A pulsed peaks.

Use Value: Zener-protected body diode eliminates need for discrete anti-parallel diode, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF9N65M2	Same die, TO-220FP package with insulated tab; R_thj-case = 6.25 °C/W vs. 2.08 °C/W	Lower power density; suited for space-constrained but thermally limited layouts	Select when mechanical clearance prohibits TO-220 mounting or when lower thermal mass is preferred for transient response
STU9N65M2	Same die, IPAK (TO-251) package; identical R_thj-case (2.08 °C/W) but surface-mount compatible	Requires reflow-compatible PCB layout; no through-hole mounting or heatsink screw interface	Choose for automated assembly lines where lead-free reflow and board-level integration outweigh serviceability needs

Compared with STF9N65M2 and STU9N65M2, STP9N65M2 offers superior thermal performance in through-hole systems requiring direct heatsink attachment, while maintaining identical electrical specs - making it optimal for field-serviceable industrial power supplies.

Availability

STP9N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for STP9N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

STP9N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in 650 V-class applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP9N65M2 supports 3.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10197 Rev 3. This limit is determined by package thermal constraints, not silicon capability, and assumes proper heatsinking to maintain case temperature at or below 100 °C.

Does STP9N65M2 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 17), and ST recommends 4.7–10 Ω for hard-switching applications to dampen ringing and limit peak gate current. Lower values increase switching speed but risk oscillation; higher values degrade efficiency.

Can STP9N65M2 replace older STP9NK60Z in existing designs?

Yes, with qualification: STP9N65M2 offers higher V_DS (650 V vs. 600 V), lower R_DS(on) (0.90 Ω vs. 0.95 Ω), and improved E_AS (105 mJ vs. 75 mJ), but shares identical TO-220 footprint and pinout. Layout compatibility is confirmed; thermal and gate drive margins should be re-verified.

Is the body diode suitable for synchronous rectification?

No - the body diode has t_rr = 276 ns and Q_rr = 1.7 µC, which generate significant reverse recovery loss in high-frequency synchronous rectification. It is designed for freewheeling and clamping, not as a primary rectifier; external Schottky or SiC diodes are required for SR applications.

STP9N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP9N65M2 FAQ

1.How can I place an order for STP9N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP9N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP9N65M2 reliable?

The price and inventory of STP9N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP9N65M2 is usually 5 days.

3.What payment methods are accepted for STP9N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP9N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP9N65M2?

STP9N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP9N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP9N65M2?

For technical support, including STP9N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP9N65M2 requirements.

6.How does Aetrix verify that STP9N65M2 is sourced from the original manufacturer or authorized distributors?

All STP9N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP9N65M2 meets industry standards.

7.What is the process for return or replacement of STP9N65M2?

All STP9N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP9N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP9N65M2 part is unused and in its original packaging.

Return procedure for STP9N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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