STMicroelectronics STP9N80K5

Overview

STP9N80K5 from STMicroelectronics is an N-channel 800 V, 0.73 Ω typ. (0.90 Ω max), 7 A MDmesh™ K5 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters where low conduction loss and fast switching are critical.

For engineers reviewing the STP9N80K5 datasheet, STP9N80K5 pinout, STP9N80K5 application, or STP9N80K5 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 12 nC total gate charge, 110 W T_C=25°C power dissipation, avalanche ruggedness (200 mJ E_AS), and built-in Zener-protected gate.

Technical Context

This device employs ST's MDmesh™ K5 vertical superjunction technology to achieve industry-leading figure-of-merit (R_DS(on) × area) and ultra-low gate charge. Its 800 V V_(BR)DSS, 4.5 V/ns diode recovery dv/dt rating, and 50 V/ns MOSFET dv/dt ruggedness support robust operation in hard-switched high-voltage topologies.

The integrated back-to-back gate-source Zener diodes (±30 V breakdown) eliminate external ESD protection components. Thermal resistance junction-to-case is 1.14 °C/W, enabling efficient heatsinking in TO-220 format for continuous 4.4 A operation at T_C = 100 °C.

Key Specifications

Pinout & Package

STP9N80K5 uses a TO-220 type A package with 3 leads: Drain (Tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP90N08S4-05, STP9N80K5 delivers 10× higher voltage rating at cost of higher R_DS(on); versus STW9N80K5, it trades 6% lower thermal resistance and 14% higher power rating for TO-220's lower profile and cost.

Availability

STP9N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, UPS systems, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP9N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-voltage power conversion-specifically engineered to reduce conduction and switching losses in 600–900 V SMPS, PFC, and inverter applications.

FAQ

Is STP9N80K5 suitable for zero-voltage switching (ZVS) topologies?

Yes. With 340 pF C_iss, 37 pF C_oss, and 0.65 pF C_rss, STP9N80K5 exhibits low capacitance and favorable charge ratios (Q_gd/Q_g = 0.56), enabling predictable resonant turn-on in LLC and phase-shifted full-bridge converters operating up to 300 kHz.

What is the maximum continuous drain current at case temperature of 85 °C?

Per derating curve in Figure 2 (Safe Operating Area), STP9N80K5 supports 5.6 A continuous drain current at T_C = 85 °C. This is interpolated from the 7 A rating at 25 °C and 4.4 A at 100 °C, following linear thermal derating above 25 °C.

Does the built-in Zener protection cover both positive and negative gate transients?

Yes. The device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage (I_GS = ±1 mA), providing symmetrical clamping for both positive overvoltage and negative undershoot events on the gate terminal.

Can STP9N80K5 replace STP8NK80Z in existing designs?

Yes, with verified performance gain. STP9N80K5 offers 0.90 Ω R_DS(on) vs. STP8NK80Z's 1.05 Ω, 12 nC Q_g vs. 15 nC, and enhanced avalanche rating (200 mJ vs. 170 mJ), delivering measurable efficiency and reliability improvement without layout change.