STMicroelectronics STP9NM60N

Overview

STP9NM60N from STMicroelectronics is an N-channel 600 V, 0.745 Ω (max), 6.5 A Power MOSFET in TO-220 package, built on MDmesh™ II technology for high-efficiency flyback and PFC converters. It features 100% avalanche tested ruggedness, low gate charge (17.4 nC), and low input capacitance (452 pF), enabling fast switching in industrial SMPS and AC-DC adapters.

For engineers reviewing the STP9NM60N datasheet, STP9NM60N pinout, STP9NM60N application, or STP9NM60N equivalent, key selection criteria include its 600 V V_DS, 17.4 nC Q_g, 264 ns t_rr, R_thj-case = 5 °C/W, and TO-220 thermal performance in continuous conduction mode (CCM) PFC stages.

Technical Context

This device uses ST's second-generation MDmesh™ vertical strip architecture to minimize R_DS(on) and gate charge simultaneously. Its 600 V breakdown voltage supports universal-input offline converters, while the integrated body diode with 264 ns reverse recovery time enables quasi-resonant operation without external snubbing.

The MOSFET operates with ±25 V gate drive, supports 26 A pulsed drain current, and delivers 70 W total dissipation at T_C = 25 °C. Its 15 V/ns dv/dt immunity ensures robustness against parasitic turn-on in high-side configurations.

Key Specifications

Pinout & Package

STP9NM60N is housed in a TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with IPP60R099C7 and IRFP460, STP9NM60N offers superior R_DS(on) × Q_g trade-off for 65–100 kHz PFC, verified avalanche ruggedness, and tighter t_rr control-making it optimal for space-constrained, high-reliability AC-DC systems.

Availability

STP9NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and LED driver flyback converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP9NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP9NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion-targeting 80 PLUS Titanium/Platinum-certified SMPS designs.

FAQ

Is STP9NM60N suitable for zero-voltage switching (ZVS) topologies?

Yes. Its 264 ns reverse recovery time, 79 pF C_oss eq., and 15 V/ns dv/dt rating enable reliable ZVS operation in resonant LLC and phase-shifted full-bridge converters. The fast, soft-recovery body diode minimizes voltage overshoot during dead-time commutation, reducing stress on the device and EMI filter components.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 4 A at T_C = 100 °C, as specified in Table 1 of DS6986 Rev 2. This reflects thermal derating due to junction-to-case resistance (5 °C/W) and maximum T_j = 150 °C. At 25 °C case, it supports 6.5 A continuous operation.

Does STP9NM60N require a gate resistor for stability in hard-switched applications?

Yes. A 10–22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the 4.8 Ω intrinsic gate resistance and 452 pF C_iss. This prevents false turn-on during high dv/dt transitions and ensures clean 28 ns t_d(on) and 52.5 ns t_d(off) timing.

Can STP9NM60N replace STF9NM60N in TO-220FP footprint designs?

No. STP9NM60N uses TO-220 (3-pin, non-isolated tab), while STF9NM60N uses TO-220FP (3-pin, isolated tab, shorter leads). Mechanical incompatibility prevents direct substitution-mounting hole alignment, creepage distance, and thermal pad contact differ. Board redesign is required for package interchange.