STMicroelectronics STQ1NC45R-AP

Overview

STQ1NC45R-AP from STMicroelectronics is an N-channel SuperMESH™ Power MOSFET rated for 450 V drain-source voltage, <4.5 Ω R_DS(on) at V_GS = 10 V and I_D = 0.5 A, 3.1 W power dissipation, and packaged in TO-92 (Ammopak). It delivers high dv/dt immunity and 100% avalanche tested ruggedness for low-power switching in compact fluorescent lamp ballasts and battery chargers.

For engineers reviewing the STQ1NC45R-AP datasheet, STQ1NC45R-AP pinout, STQ1NC45R-AP application, or STQ1NC45R-AP equivalent, key selection criteria include its 450 V breakdown rating, 0.5 A continuous drain current at T_C = 25°C, 4.1 Ω typical R_DS(on), 7 nC total gate charge, and TO-92 thermal resistance of 120 °C/W junction-to-ambient.

Technical Context

This MOSFET employs ST's SuperMESH™ strip-based layout to minimize R_DS(on) while preserving robust dv/dt capability up to 3 V/ns under defined di/dt and V_DD conditions. Its gate threshold voltage (2.3–3.7 V) and low Q_g (7 nC) support efficient low-voltage gate drive in cost-sensitive SMPS topologies.

The device integrates a fast-recovery source-drain diode with t_rr = 225 ns and Q_rr = 530 nC at T_j = 150°C, enabling reliable operation in inductive-switching circuits where unclamped inductive load (UIL) stress must be managed without external snubbers.

Key Specifications

Pinout & Package

STQ1NC45R-AP uses the TO-92 package (Ammopak), a through-hole, three-terminal plastic case optimized for low-cost, low-power discrete mounting. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - consistent with standard TO-92 orientation when flat side faces viewer and leads point downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Compared with STP1NK60Z and IRF630NPBF, STQ1NC45R-AP uniquely balances 450 V rating, sub-5 Ω on-resistance, and guaranteed avalanche energy-making it optimal for cost-constrained, thermally limited CFL and charger designs where both voltage headroom and efficiency matter.

Availability

STQ1NC45R-AP is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, low-power battery chargers, and offline AC-DC adapters requiring stable component supply and long-term manufacturability.

Supply support for STQ1NC45R-AP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

STQ1NC45R-AP belongs to the SuperMESH™ Power MOSFET product line, engineered specifically for high-voltage, low-power switching applications where avalanche ruggedness, dv/dt immunity, and cost-effective packaging are essential.

FAQ

What is the maximum continuous drain current for STQ1NC45R-AP at 100°C case temperature?

The maximum continuous drain current is 0.315 A at T_C = 100°C, derived from derating the 0.5 A rating at 25°C using the 0.025 W/°C derating factor and thermal resistance. This reflects real-world thermal limits in enclosed, non-heatsinked TO-92 applications.

Does STQ1NC45R-AP have integrated gate protection?

No, STQ1NC45R-AP does not integrate gate Zener protection. Its gate-source voltage rating is ±30 V, and external gate resistors and clamping diodes are recommended in noisy environments or when driving from high-impedance sources to prevent ESD or transient overvoltage damage.

Can STQ1NC45R-AP replace STD2NC45-1 in the same PCB footprint?

No - STD2NC45-1 uses IPAK (TO-251) while STQ1NC45R-AP uses TO-92; their land patterns, thermal vias, and mechanical clearances are incompatible. The TO-92 variant trades power handling (3.1 W vs. 30 W) and current capacity (0.5 A vs. 1.5 A) for lower cost and smaller size.

What is the typical reverse recovery time of the body diode?

The typical reverse recovery time (t_rr) is 225 ns under test conditions of I_SD = 1.5 A, di/dt = 100 A/μs, V_DD = 100 V, and T_j = 150°C. This value is measured on the integrated source-drain diode and is critical for minimizing switching loss in discontinuous conduction mode topologies.