STMicroelectronics STQ2HNK60ZR-AP

Overview

STQ2HNK60ZR-AP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated at 600 V V_DS, 4.8 Ω max R_DS(on), and 2 A continuous drain current in an IPAK (TO-251) package. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested operation, and low gate charge (11–15 nC) for robust switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STQ2HNK60ZR-AP datasheet, STQ2HNK60ZR-AP pinout, STQ2HNK60ZR-AP application, or STQ2HNK60ZR-AP equivalent, key selection criteria include its 600 V breakdown voltage, 2.77 °C/W junction-to-case thermal resistance, Zener-protected gate, and verified unclamped inductive switching performance up to 120 mJ single-pulse avalanche energy.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - optimized for reduced on-resistance while preserving high-voltage ruggedness. Its Zener-protected gate structure enables ±30 V V_GS tolerance and intrinsic ESD immunity (2 kV HBM), eliminating need for external gate protection in many designs.

The MOSFET integrates a fast-recovery body diode with 178 ns trr (T_J = 25 °C) and 445 nC Q_rr, supporting hard-switched flyback and resonant topologies. Safe operating area (SOA) is defined up to 100 µs pulse width at 2 A, constrained by R_DS(on) and thermal limits (T_J ≤ 150 °C).

Key Specifications

Pinout & Package

STQ2HNK60ZR-AP uses the IPAK (TO-251) type C package with an electrically active exposed tab (Drain-connected). The three-terminal configuration supports low-inductance PCB layout and efficient thermal transfer to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP2HNK60Z and FQP2N60, STQ2HNK60ZR-AP offers superior gate ruggedness and compact IPAK packaging - critical for space-constrained, high-reliability AC-DC systems where layout-induced dv/dt stress is unavoidable.

Availability

STQ2HNK60ZR-AP is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, and industrial PLC input stages requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for STQ2HNK60ZR-AP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The SuperMESH Power MOSFET product line targets high-efficiency, high-reliability offline power conversion - specifically engineered for ruggedness in unclamped inductive switching and surge-prone mains-connected applications.

FAQ

What is the maximum safe operating temperature for STQ2HNK60ZR-AP?

The device has a specified operating junction temperature range of –55 °C to 150 °C. Maximum continuous operation occurs at T_J = 150 °C, which corresponds to T_C ≈ 135 °C given its 2.77 °C/W R_thJC. Derating is required above 100 °C case temperature per the SOA curve in DS3646.

Does STQ2HNK60ZR-AP require an external gate resistor?

Yes - a gate resistor (typically 4.7–10 Ω) is required to control dV/dt and prevent oscillation. The 11–15 nC total gate charge and low C_iss make it sensitive to parasitic inductance; layout and resistor value must be tuned to achieve clean 10–30 ns rise/fall times without overshoot.

Can STQ2HNK60ZR-AP replace STD2HNK60Z-1 in existing designs?

Yes - STQ2HNK60ZR-AP shares identical electrical specifications, pinout, and package with STD2HNK60Z-1 per DS3646 Rev 8. The "R-AP" suffix denotes tape-and-reel packaging and minor internal process enhancements; no schematic or layout changes are needed for drop-in replacement.

Is the exposed tab electrically isolated in STQ2HNK60ZR-AP?

No - the exposed tab is internally connected to the Drain (pin 2). It must be mounted to a heatsink using electrically insulating thermal pads or mica washers if the heatsink is grounded or at a different potential than the drain node.