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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS10P3LLH6

Name: STS10P3LLH6
Brand: STMicroelectronics
SKU: STS10P3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS10P3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS10P3LLH6.pdf

Description:: MOSFET P-CH 30V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS10P3LLH6 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET using STripFET H6 trench gate technology in SO-8 package, rated for -30 V V_DS, 12 mΩ R_DS(on) max at V_GS = -10 V, and -12.5 A continuous drain current at T_amb = 25 °C. It delivers high avalanche ruggedness (70 mJ EAS) and low gate charge (33 nC Q_g) for efficient switching in DC-DC converters and load switches.

For engineers reviewing the STS10P3LLH6 datasheet, STS10P3LLH6 pinout, STS10P3LLH6 application, or STS10P3LLH6 equivalent, key selection criteria include verified P-channel SO-8 layout compatibility, confirmed -30 V breakdown margin, validated R_DS(on) performance at -4.5 V gate drive, and documented avalanche energy rating under pulsed inductive loads.

Technical Context

This device operates as a high-side or low-side switch in DC power paths, leveraging its negative threshold voltage (-1.0 to -2.5 V V_GS(th)) and symmetrical ±20 V gate drive capability. Its SO-8 footprint supports standard PCB layouts with thermal relief via exposed drain pad connections.

The STripFET H6 process enables reduced specific on-resistance and improved capacitance ratios (C_iss/C_oss = ~8.1), supporting fast switching with controlled dV/dt and minimized Miller effect. The integrated body diode exhibits 25.2 ns t_rr and 17.4 nC Q_rr at 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in reverse-biased drain-source configuration
R_DS(on) max	12 mΩ at V_GS = -10 V, I_D = -5 A - Ensures <150 mW conduction loss at 10 A
I_D cont	-12.5 A at T_amb = 25 °C - Supports 12 A steady-state load with 25 °C ambient derating
Q_g	33 nC - Enables full turn-on with <1 µC gate driver charge budget at 1 MHz switching
EAS	70 mJ - Withstands single-pulse inductive energy without failure at T_J = 25 °C
t_r/t_f	112 ns / 45 ns - Delivers sub-200 ns total switching transition under 4.7 Ω gate resistance
C_iss	3350 pF - Determines gate drive current requirement and Miller plateau duration

Pinout & Package

STS10P3LLH6 uses an SO-8 surface-mount package with exposed drain pad (pins 5–8 tied internally to drain). Thermal resistance R_thj-amb is 47 °C/W on 1 inch² FR-4 board with 2 oz. Cu.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; electrically connected to pins 1–3 for low-inductance source routing
4	Gate	Control terminal requiring negative V_GS for turn-on; isolated from drain/source by oxide layer
5, 6, 7, 8	Drain	Main power output node; pins 5–8 are internally bonded to drain metallization and exposed pad for thermal dissipation

Key Features

Feature	Design Value
Very low R_DS(on)	10 mΩ typ. at V_GS = -10 V enables <1 W conduction loss at 10 A in compact SO-8 form factor
Low gate charge	33 nC total gate charge reduces driver power consumption and improves switching efficiency above 100 kHz
High avalanche ruggedness	70 mJ single-pulse avalanche energy allows reliable operation during inductive load turn-off transients
STripFET H6 trench structure	Optimized cell pitch and gate trench depth yield 15% lower R_DS(on)·A than prior H5 generation

Applications

Power Supply OR-ing

Hot-Swap Controller

Use Scenario: Dual-input redundant 12 V supply where only one rail powers downstream circuitry.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in back-to-back configuration.

Use Value: Eliminates 0.4 V forward drop of Schottky diodes, reducing heat generation and improving system efficiency by >3% at 8 A load.

Use Scenario: Controlled insertion of a 5 V/3.3 V board into live backplane without supply disturbance.

IC Role / Device Role / Timing Role: High-side switch managing inrush current during connector mating.

Use Value: 12 mΩ R_DS(on) limits inrush voltage drop to <100 mV at 8 A, preventing brownout on shared rail.

DC-DC Synchronous Rectifier

Battery Protection Circuit

Use Scenario: Secondary-side synchronous rectification in isolated 24 V to 5 V flyback converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal.

Use Value: 17 mΩ R_DS(on) at V_GS = -4.5 V ensures <1.4 W conduction loss at 9 A, outperforming Schottky alternatives.

Use Scenario: Overcurrent and short-circuit protection for 3S Li-ion battery pack (12.6 V nominal).

IC Role / Device Role / Timing Role: Charge/discharge FET controlling current path between battery and load.

Use Value: -30 V V_DS rating provides 2× margin over 12.6 V pack voltage, enabling robust fault tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7413TRPBF	R_DS(on) = 14 mΩ @ -4.5 V; Q_g = 32 nC; SO-8 package	Slightly higher on-resistance at low gate drive; identical pinout and thermal profile	Select when gate drive is limited to -4.5 V and 12 mΩ is not mandatory
DMG2305UVT-7	R_DS(on) = 42 mΩ @ -4.5 V; Q_g = 12 nC; SOT-23-6 package	Higher R_DS(on) but smaller footprint; unsuitable for >3 A continuous loads	Choose only for space-constrained, low-current (<2.5 A) applications where SO-8 is prohibitive

Compared with IRF7413TRPBF and DMG2305UVT-7, STS10P3LLH6 offers superior R_DS(on) at both -10 V and -4.5 V gate bias, making it optimal for high-efficiency, medium-power P-channel switching where thermal headroom and conduction loss are critical.

Availability

STS10P3LLH6 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, OR-ing circuits, and battery protection systems requiring stable component supply and long-term industrial availability.

Supply support for STS10P3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ H6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power switching in space-constrained industrial and computing applications.

FAQ

What is the maximum safe operating temperature for STS10P3LLH6?

The STS10P3LLH6 has a specified operating junction temperature range of -55 °C to 150 °C. Its absolute maximum storage temperature is also -55 °C to 150 °C. Continuous operation above 150 °C risks permanent parametric shift or thermal runaway, especially under high R_DS(on) conditions. Derating curves in Figure 1 confirm safe operation up to 150 °C with appropriate PCB copper area.

Can STS10P3LLH6 be used with +5 V logic-level gate drive?

No - STS10P3LLH6 requires negative gate-source voltage for turn-on. Its V_GS(th) ranges from -1.0 V to -2.5 V, and R_DS(on) is only guaranteed at V_GS ≤ -4.5 V. A +5 V logic signal applied directly would forward-bias the gate oxide and destroy the device. Gate drivers must generate -4.5 V to -10 V relative to source.

Is the SO-8 package lead-free and RoHS compliant?

Yes - STS10P3LLH6 is supplied in ECOPACK®-compliant SO-8 packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "ECOPACK2" grade designation per ST's environmental compliance documentation, indicating halogen-free and lead-free terminations.

Does STS10P3LLH6 include an integrated ESD protection diode?

No - STS10P3LLH6 does not integrate dedicated ESD protection structures on gate or drain terminals. Its gate oxide withstands ±20 V V_GS per absolute maximum ratings, but external TVS or RC networks are recommended for handling >2 kV HBM events in automated assembly or field environments.

STS10P3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ H6

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS10P3LLH6 FAQ

1.How can I place an order for STS10P3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS10P3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS10P3LLH6 reliable?

The price and inventory of STS10P3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS10P3LLH6 is usually 5 days.

3.What payment methods are accepted for STS10P3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS10P3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS10P3LLH6?

STS10P3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS10P3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS10P3LLH6?

For technical support, including STS10P3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS10P3LLH6 requirements.

6.How does Aetrix verify that STS10P3LLH6 is sourced from the original manufacturer or authorized distributors?

All STS10P3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS10P3LLH6 meets industry standards.

7.What is the process for return or replacement of STS10P3LLH6?

All STS10P3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STS10P3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS10P3LLH6 part is unused and in its original packaging.

Return procedure for STS10P3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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