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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS10P4LLF6

Name: STS10P4LLF6
Brand: STMicroelectronics
SKU: STS10P4LLF6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS10P4LLF6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS10P4LLF6.pdf

Description:: MOSFET P-CH 40V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS10P4LLF6 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET in SO-8 package, designed for high-efficiency low-side switching in DC-DC converters and load switches. It delivers -40 V V_DS, 12.5 mΩ typ. R_DS(on) at V_GS = -10 V, -10 A continuous drain current at T_amb = 25 °C, and features STripFET F6 trench gate technology for low gate charge (34 nC) and high avalanche ruggedness.

For engineers reviewing the STS10P4LLF6 datasheet, STS10P4LLF6 pinout, STS10P4LLF6 application, or STS10P4LLF6 equivalent, key selection criteria include verified P-channel SO-8 layout compatibility, -40 V breakdown margin, sub-15 mΩ on-resistance at -4.5 V gate drive, and unclamped inductive switching capability up to 150 °C junction temperature.

Technical Context

This device employs ST's STripFET F6 process with optimized trench gate geometry to reduce specific on-resistance and gate-to-drain charge (Q_gd = 13.8 nC). Its static characteristics are specified across -55 °C to 150 °C, with V_GS(th) ranging from -1 V to -2.5 V and R_DS(on) exhibiting <1.6× variation over temperature.

The SO-8 package enables dual-source/drain paralleling via pins 1–3 (S), pin 4 (G), and pins 5–8 (D), supporting PCB-level thermal management with R_thJA = 47 °C/W on 1-inch² FR-4 (2 oz Cu). Dynamic parameters-including 49.4 ns t_d(on), 29 ns t_rr, and 27.6 nC Q_rr-are characterized under standardized inductive-load test circuits per Figure 14.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum reverse drain-source blocking voltage for 12 V/24 V automotive and industrial bus protection
R_DS(on) max	15 mΩ at V_GS = -10 V, I_D = -3 A - Enables ≤150 mW conduction loss at -10 A, critical for thermally constrained layouts
I_D cont	-10 A at T_amb = 25 °C - Supports high-current load switching without external heatsinking in ambient-cooled designs
Q_g	34 nC at V_DD = -20 V, I_D = -10 A - Reduces gate driver power loss and enables >1 MHz PWM operation with standard logic-level drivers
t_rr	29 ns at I_SD = -5 A, di/dt = 100 A/µs - Minimizes switching node oscillation and EMI in synchronous buck high-side configurations
V_GS(th)	-1 to -2.5 V - Ensures reliable turn-on with -3.3 V or -5 V logic-compatible gate control, avoiding partial enhancement

Pinout & Package

STS10P4LLF6 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pads on pins 5–8 for enhanced thermal dissipation. The package outline conforms to JEDEC MS-012AC, with 1.27 mm pitch and 4.9 mm × 6.0 mm body dimensions.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection for internal die paralleling; low-inductance return path for high di/dt loads
4	Gate (G)	Control terminal requiring ≤±20 V rating; driven directly by microcontroller GPIO or dedicated gate driver
5, 6, 7, 8	Drain (D)	High-current output node tied to internal drain metallization; electrically and thermally connected to exposed pad

Key Features

Feature	Design Value
Very low R_DS(on)	12.5 mΩ typ. at V_GS = -10 V reduces conduction loss by >30% vs. legacy P-channel MOSFETs in 12 V systems
Low gate charge	34 nC total gate charge enables fast switching with minimal driver power consumption and reduced gate loop EMI
High avalanche ruggedness	Rated for unclamped inductive switching (UIS) up to 150 °C, supporting robust operation in motor drive flyback paths
Low gate drive power loss	Q_gs = 11.3 nC and Q_gd = 13.8 nC minimize Miller plateau duration and associated dynamic losses

Applications

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-side switch in 12 V input, 3.3 V/5 V output buck converter powering infotainment SoCs.

IC Role / Device Role / Timing Role: P-channel high-side switch replacing N-channel + level shifter; operates in hard-switched mode at 500 kHz.

Use Value: 12.5 mΩ R_DS(on) limits conduction loss to 1.25 W at 10 A, enabling compact layout without forced air cooling.

Use Scenario: Load switch for LED headlamp dimming and window lift motor control in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: Low-side driver for resistive/inductive loads; handles pulsed currents up to -40 A (IDM).

Use Value: -40 V V_DS withstands load-dump transients (ISO 7637-2 Pulse 5a), while 29 ns t_rr prevents shoot-through in H-bridge configurations.

Industrial PLC Digital Output Module

USB-C Power Delivery Load Switch

Use Scenario: Solid-state relay replacement in 24 V DC digital output card driving solenoids and contactors.

IC Role / Device Role / Timing Role: P-channel power switch with integrated gate pull-down; controlled by isolated SPI DAC interface.

Use Value: -10 A I_D rating supports 2 A steady-state + 10 A surge loads; 150 °C T_J rating ensures reliability in sealed enclosures.

Use Scenario: VBUS discharge and overcurrent protection switch in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch placed between CC logic and VBUS path.

Use Value: -2.5 V V_GS(th) max ensures full enhancement with USB PD controller's -3.3 V gate drive; 17 mΩ R_DS(on) at -4.5 V meets 50 mΩ system budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	-40 V V_DS, 1.4 mΩ R_DS(on) at -10 V, but in TSDSON-8 package (not SO-8); higher capacitance (C_iss = 4700 pF)	Requires PCB redesign due to different footprint and thermal pad layout; better for ultra-low-loss high-frequency SMPS	Select only if board redesign is feasible and R_DS(on) reduction justifies layout change and cost premium
Vishay SI7157DP	-40 V V_DS, 16 mΩ R_DS(on) at -10 V, SO-8 compatible; higher Q_g (42 nC) and lower I_D rating (-8.5 A)	Drop-in SO-8 replacement with identical pinout but 15% higher conduction loss and slower switching	Use when STS10P4LLF6 is unavailable and design tolerates 0.5 W extra loss at full load

Compared with BSC014N04LS and SI7157DP, STS10P4LLF6 offers optimal balance of SO-8 compatibility, 12.5 mΩ R_DS(on), and 34 nC Q_g-making it preferred for space-constrained industrial and automotive modules where footprint retention and thermal performance are jointly critical.

Availability

STS10P4LLF6 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, and industrial PLC output modules requiring stable component supply, long-term lifecycle support, and ECOPACK-compliant packaging.

Supply support for STS10P4LLF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities.

STS10P4LLF6 belongs to ST's STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V–48 V industrial and automotive power systems.

FAQ

What is the maximum safe operating temperature for STS10P4LLF6?

The absolute maximum junction temperature is 150 °C, and the device is rated for continuous operation up to this limit. Thermal resistance junction-to-ambient is 47 °C/W on a 1-inch² FR-4 board with 2 oz copper. Derating curves in Figure 1 confirm safe single-pulse operation up to 10 A at 150 °C with pulse durations ≤100 µs.

Can STS10P4LLF6 be used in a high-side configuration with 0 V to -12 V gate drive?

Yes-STS10P4LLF6 is a P-channel MOSFET with V_GS(th) between -1 V and -2.5 V, so applying -12 V to the gate relative to source fully enhances the channel. Gate-source voltage must remain within ±20 V, and gate drive must avoid floating conditions; a pull-down resistor (e.g., 10 kΩ) is recommended when inactive.

Does STS10P4LLF6 have an integrated body diode, and what are its recovery characteristics?

Yes-it includes a monolithic source-drain body diode with V_SD = -1.1 V at -3 A and T_J = 25 °C. Recovery is characterized at 29 ns t_rr, 27.6 nC Q_rr, and -1.9 A I_RRM under 100 A/µs di/dt, making it suitable for freewheeling in synchronous rectifiers and inductive load snubbing.

Is STS10P4LLF6 RoHS and REACH compliant?

Yes-STS10P4LLF6 is manufactured in ST's ECOPACK®-compliant SO-8 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and substance thresholds, is available via ST's official product page and distributor portals.

STS10P4LLF6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F6

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3525 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS10P4LLF6 FAQ

1.How can I place an order for STS10P4LLF6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS10P4LLF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS10P4LLF6 reliable?

The price and inventory of STS10P4LLF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS10P4LLF6 is usually 5 days.

3.What payment methods are accepted for STS10P4LLF6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS10P4LLF6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS10P4LLF6?

STS10P4LLF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS10P4LLF6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS10P4LLF6?

For technical support, including STS10P4LLF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS10P4LLF6 requirements.

6.How does Aetrix verify that STS10P4LLF6 is sourced from the original manufacturer or authorized distributors?

All STS10P4LLF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS10P4LLF6 meets industry standards.

7.What is the process for return or replacement of STS10P4LLF6?

All STS10P4LLF6 units undergo pre-shipment inspection (PSI). If there is an issue with STS10P4LLF6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS10P4LLF6 part is unused and in its original packaging.

Return procedure for STS10P4LLF6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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