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STMicroelectronics STS10PF30L
- Part No.:
- STS10PF30L
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS10PF30L.pdf
- Description:
- MOSFET P-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,174
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Product details
Overview
STS10PF30L from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SO-8 package, rated for 30 V VDS, 10 A continuous drain current at TC = 25°C, 0.012 Ω typical RDS(on) at VGS = 10 V, and optimized for low-threshold gate drive (VGS(th) = 1 V). It serves as a high-efficiency load switch in portable battery-powered systems.
For engineers reviewing the STS10PF30L datasheet, STS10PF30L pinout, STS10PF30L application, or STS10PF30L equivalent, key selection criteria include verified P-channel RDS(on) at 4.5 V gate drive, SO-8 thermal performance on FR-4, source-drain diode forward voltage (1.2 V), safe operating area limits, and gate charge (29 nC) for switching loss estimation.
Technical Context
This device uses ST's StripFET™ II process to achieve high cell density and low on-resistance in a standard SO-8 outline. Its P-channel topology enables high-side switching without level-shifting circuitry, and its 1 V gate threshold allows direct interface with 1.8 V/3.3 V logic controllers.
The integrated source-drain diode supports bidirectional current flow in battery protection circuits, with measured trr = 48.5 ns and Qrr = 68 nC at Tj = 150°C, enabling efficient synchronous rectification in compact DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage for battery input rails up to 24 V nominal |
| RDS(on) @ VGS = 10 V | 0.012 Ω typ - conduction loss of 0.6 W at 10 A, enabling >95% efficiency in 5–12 V load switches |
| RDS(on) @ VGS = 4.5 V | 0.015 Ω typ - ensures full enhancement with 3.3 V microcontroller GPIOs |
| ID (continuous, TC = 25°C) | 10 A - supports single-cell Li-ion battery packs delivering ≥50 W to peripherals |
| Qg | 29 nC - determines gate driver current requirement (e.g., 2.9 mA avg for 1 MHz switching) |
| VGS(th) | 1 V min - guarantees turn-on with logic-level signals, eliminating need for external gate boosters |
| VSD @ ISD = 10 A | 1.2 V - forward drop of internal body diode impacts reverse-current path losses in OR-ing applications |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AC), 5.0 mm × 6.2 mm footprint, 1.75 mm height, with exposed drain pad thermally connected to pins 1, 2, 3, and 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 (Drain) | Power Drain Terminal | Internally bonded to exposed copper pad; primary heat path to PCB copper pour |
| 5 (Source) | Reference Node / Return Path | Common return for load current; ties to system ground or battery negative |
| 6 (Gate) | Control Input | High-impedance MOS gate requiring <100 nA leakage; driven by logic-level signal |
| 7 (Source) | Reference Node / Return Path | Redundant source connection for lower loop inductance in high-dI/dt switching |
| 8 (Source) | Reference Node / Return Path | Third source terminal to minimize source inductance and improve stability under pulsed loads |
Key Features
| Feature | Design Value |
|---|---|
| P-channel configuration | Enables high-side load switching without bootstrap capacitors or level shifters |
| Low 1 V gate threshold | Guarantees full enhancement with 1.8 V/3.3 V I/O, reducing BOM count in ultra-low-power designs |
| 0.012 Ω RDS(on) @ 10 V | Minimizes conduction loss in space-constrained battery management modules where thermal margin is limited |
| Integrated source-drain diode | Supports reverse-current protection and OR-ing functionality without discrete diode placement |
| SO-8 mechanical compatibility | Allows automated placement using standard pick-and-place equipment and reflow profiles |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Preventing over-discharge and short-circuit damage in lithium-ion battery packs used in handheld medical devices. IC Role / Device Role: High-side P-channel MOSFET acting as main battery disconnect switch controlled by fuel gauge IC. Use Value: 1 V VGS(th) ensures reliable turn-off during deep sleep modes; 0.012 Ω RDS(on) limits self-heating to <1°C rise at 5 A. | Use Scenario: Enabling/disabling VBUS path in USB-C receptacles supporting 3 A @ 20 V (60 W). IC Role / Device Role: Load switch isolating downstream port electronics from upstream power source during hot-plug events. Use Value: 30 V rating accommodates 20 V PD3.1 extended power range; SO-8 thermal resistance (Rthj-amb = 47 °C/W) sustains 6 A pulsed current without derating. |
| Smartphone Power Path Management | Industrial Portable Scanner Power Control |
Use Scenario: Managing dual-input power (battery + wall adapter) with automatic source selection and backfeed prevention. IC Role / Device Role: Reverse-blocking P-channel switch placed between battery and system rail to prevent reverse current into depleted cells. Use Value: Integrated body diode provides inherent reverse-current blocking; 1.2 V VSD ensures minimal voltage drop during charging path conduction. | Use Scenario: Controlling power to laser diode drivers and CMOS image sensors in handheld barcode scanners. IC Role / Device Role: Low-noise, logic-compatible load switch enabling rapid power cycling to extend battery life. Use Value: 29 nC total gate charge enables clean 100 kHz switching with <5 µs transition times; SO-8 layout minimizes EMI coupling to sensitive analog front-end. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7410PbF | RDS(on) = 0.022 Ω @ 4.5 V (vs. 0.015 Ω); higher Qg = 34 nC | Higher conduction loss at 3.3 V drive; less suitable for 10 A continuous loads | Prefer when cost sensitivity outweighs efficiency requirements and thermal budget permits 1.5× RDS(on) |
| DMG2305UVT | VDS = 20 V (vs. 30 V); RDS(on) = 0.035 Ω @ 4.5 V | Not rated for 24 V battery systems; limited to ≤12 V applications | Select only for sub-15 V embedded systems where SO-8 footprint and 3.3 V compatibility are critical |
Compared with IRF7410PbF and DMG2305UVT, STS10PF30L delivers superior 30 V capability, lowest RDS(on) at logic-level gate drive, and tighter VGS(th) distribution-making it optimal for high-reliability nomadic equipment demanding robust 10 A switching at minimal voltage overhead.
Availability
STS10PF30L is available at Aetrix Electronics and suitable for battery management in nomadic equipment, USB-C power delivery switches, smartphone power path management, and industrial portable scanner power control requiring stable component supply across long-lifecycle consumer and medical programs.
Supply support for STS10PF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
The STS10PF30L belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-density, low-RDS(on) P-channel switching in space- and efficiency-constrained portable electronics.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STS10PF30L supports 6 A continuous drain current at TC = 100°C, as specified in Table 2 of the datasheet. This derating reflects junction-to-case thermal resistance and safe operating area constraints. At this condition, RDS(on) increases to ~0.018 Ω due to temperature coefficient, resulting in ~0.65 W conduction loss. PCB layout with ≥1 inch² 2 oz copper is required to maintain thermal stability.
Does the STS10PF30L have avalanche ruggedness rating?
No avalanche rating is specified in the official STMicroelectronics datasheet for STS10PF30L. The device is not characterized for repetitive or single-pulse avalanche energy (EAS). Designers must implement external clamping (e.g., TVS diodes) or ensure operation within the SOA curve (Figure 3) to avoid destructive breakdown during inductive switching transients.
Can STS10PF30L be used in parallel configurations?
Yes, but with strict layout and biasing controls. The positive temperature coefficient of RDS(on) (Figure 12) supports current sharing, yet mismatched gate drive impedance or thermal gradients can cause imbalance. Use identical gate resistors (≤4.7 Ω), symmetrical PCB copper pours, and separate Kelvin source connections. Parallel operation beyond two units requires thermal simulation and empirical validation per JEDEC JESD51-14.
Is the SO-8 package lead-free and RoHS compliant?
Yes, the STS10PF30L is manufactured in a lead-free, RoHS-compliant SO-8 package per STMicroelectronics' 2005 datasheet revision 2.0 and subsequent product change notifications. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard SnPb and Pb-free reflow profiles, including peak temperatures up to 260°C for 10 seconds.
STS10PF30L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS10PF30L FAQ
1.How can I place an order for STS10PF30L through Aetrix?
Please submit a Request for Quotation (RFQ) for STS10PF30L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS10PF30L reliable?
The price and inventory of STS10PF30L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS10PF30L is usually 5 days.
3.What payment methods are accepted for STS10PF30L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS10PF30L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS10PF30L?
STS10PF30L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS10PF30L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS10PF30L?
For technical support, including STS10PF30L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS10PF30L requirements.
6.How does Aetrix verify that STS10PF30L is sourced from the original manufacturer or authorized distributors?
All STS10PF30L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS10PF30L meets industry standards.
7.What is the process for return or replacement of STS10PF30L?
All STS10PF30L units undergo pre-shipment inspection (PSI). If there is an issue with STS10PF30L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS10PF30L part is unused and in its original packaging.
Return procedure for STS10PF30L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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