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STMicroelectronics STS12N3LLH5

Part No.:
STS12N3LLH5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTS12N3LLH5.pdf
Description:
MOSFET N-CH 30V 12A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,939

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Product details

Overview

STS12N3LLH5 from STMicroelectronics is an N-channel 30 V Power MOSFET in SO-8 package, featuring RDS(on) = 0.0068 Ω @ VGS = 10 V, 6 A; total gate charge Qg = 8 nC; and 12 A continuous drain current at TC = 25 °C. It is optimized for high-efficiency DC-DC converters and synchronous rectification in industrial power supplies.

For engineers reviewing the STS12N3LLH5 datasheet, STS12N3LLH5 pinout, STS12N3LLH5 application, or STS12N3LLH5 equivalent, key selection criteria include low RDS(on) × Qg figure-of-merit, avalanche ruggedness (unclamped inductive switching rated), SO-8 thermal performance on FR-4 PCB, and gate drive compatibility with 4.5 V logic-level controllers.

Technical Context

This device uses STMicroelectronics' STripFET™ V process to achieve ultra-low on-resistance and minimized gate charge-critical for reducing conduction and switching losses in high-frequency switching topologies. Its 30 V VDS rating and 12 A ID capability target mid-power applications where voltage margin and thermal robustness are essential.

The MOSFET integrates a fast-recovery body diode (trr = 22 ns, Qrr = 15 nC at Tj = 150 °C), enabling reliable operation in synchronous buck and half-bridge configurations without external anti-parallel diodes in many cases.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - supports 24 V nominal bus systems with 25 % overvoltage margin
RDS(on) max0.0075 Ω @ VGS = 10 V - enables <100 mW conduction loss at 12 A
Qg8 nC - reduces gate drive power and allows use with low-current drivers
ID cont.12 A @ TC = 25 °C - delivers >8 A at 100 °C case temperature
trr22 ns - limits reverse recovery energy and EMI in hard-switched topologies
Rthj-pcb47 °C/W - measured on 1 in² FR-4 board, 2 oz Cu - defines practical power derating

Pinout & Package

STS12N3LLH5 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant) with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AA.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceCommon source connection; pins 1–4 internally bonded to reduce parasitic inductance
5, 6, 7, 8DrainPower output node; pins 5–8 tied to exposed thermal pad for low Rth
G (Pin 3)GateControl input; requires 1 V threshold and 10 V for full enhancement

Key Features

FeatureDesign Value
RDS(on) × Qg benchmark0.06 nΩ·F - industry-leading FOM for 30 V MOSFETs, minimizing combined conduction + switching loss
High avalanche ruggednessRated for unclamped inductive switching (UIS) - supports robust operation in motor drives and flyback snubbers
Low gate drive powerQgs + Qgd = 7 nC - reduces driver IC loading and simplifies gate loop layout
Optimized body diodetrr = 22 ns, Qrr = 15 nC - enables efficient synchronous rectification without external Schottky

Applications

DC-DC ConvertersSynchronous Rectifiers

Use Scenario: 12 V input to 3.3/5 V step-down converter in industrial PLC power modules.

IC Role / Device Role: High-side switch in synchronous buck topology operating at 500 kHz.

Use Value: 0.0068 Ω RDS(on) cuts conduction loss by >35 % vs. legacy 30 V MOSFETs, improving full-load efficiency to >94 %.

Use Scenario: Secondary-side rectification in isolated 48 V-to-12 V telecom DC-DC bricks.

IC Role / Device Role: Low-side synchronous rectifier controlled by dedicated SR controller.

Use Value: Fast 22 ns trr prevents shoot-through during dead-time transitions, eliminating need for external diode clamping.

Motor Drive Half-BridgesHot-Swap Controllers

Use Scenario: 24 V BLDC gate driver stage in HVAC fan control units.

IC Role / Device Role: Low-side switch in three-phase inverter leg, driven by bootstrap gate driver.

Use Value: 48 A pulsed current rating (IDM) supports peak torque surges without SOA violation.

Use Scenario: Inrush limiting and fault protection in modular server backplane slots.

IC Role / Device Role: Main pass element in active OR-ing and hot-swap circuit.

Use Value: 150 °C max junction temperature and 47 °C/W Rthj-pcb allow stable operation under sustained 10 A load with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V Power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLML6344TRPBFRDS(on) = 0.012 Ω @ 4.5 V; Qg = 5.4 nC; SO-8 but no exposed drain padLower gate charge but higher on-resistance - better for low-duty-cycle, high-VGS drivePrefer when gate drive voltage ≥ 4.5 V and thermal budget permits higher RDS(on)
DMN3025LSD-13RDS(on) = 0.0032 Ω @ 10 V; Qg = 12.5 nC; dual-N in SO-8Half the RDS(on) but 56 % higher Qg - suited for lower-frequency, high-current designsChoose when conduction loss dominates and switching frequency < 200 kHz

Compared with IRLML6344TRPBF and DMN3025LSD-13, STS12N3LLH5 offers the best balance of low RDS(on), moderate Qg, and proven avalanche capability-making it optimal for 300–1000 kHz industrial SMPS where both efficiency and reliability are critical.

Availability

STS12N3LLH5 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and telecom DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for STS12N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 24–48 V industrial power systems where thermal performance and avalanche robustness are non-negotiable.

FAQ

What is the maximum safe operating temperature for STS12N3LLH5?

The STS12N3LLH5 has a maximum operating junction temperature of 150 °C and a storage temperature range of −55 to 150 °C. When mounted on a 1 in² FR-4 PCB with 2 oz copper, its thermal resistance is 47 °C/W, allowing up to ~2.7 W dissipation at 25 °C ambient before reaching Tj = 150 °C. Derating is required above 25 °C ambient at 0.02 W/°C.

Can STS12N3LLH5 be driven directly by a 3.3 V microcontroller GPIO?

No-STS12N3LLH5 has a gate threshold voltage (VGS(th)) of 1 V min, but requires ≥4.5 V for reliable enhancement and ≤0.0092 Ω RDS(on). At 3.3 V, RDS(on) rises significantly (>0.02 Ω), increasing conduction loss. A level-shifting gate driver or dedicated 5–10 V supply is required for full performance.

Does STS12N3LLH5 have built-in ESD protection?

Yes-the device features gate oxide protection with ±100 nA gate leakage (IGSS) at ±20 V, and is qualified per JEDEC JS-001 Class 2 (2 kV HBM). However, external gate resistors and TVS diodes are still recommended in high-noise environments like motor drives or industrial power stages.

Is STS12N3LLH5 suitable for automotive applications?

No-STS12N3LLH5 is not qualified to AEC-Q101 and lacks automotive-grade screening, packaging, or guaranteed operation across −40 to 150 °C junction range. ST recommends the AEC-Q101-qualified STL12N3LLH6 or STD12N3LLH6 for automotive use, which share similar electrical specs but include extended qualification and traceability.

STS12N3LLH5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ V
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 4.5 V
Vgs (Max):
+22V, -20V
Input Capacitance (Ciss) (Max) @ Vds:
1290 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

STS12N3LLH5 FAQ

1.How can I place an order for STS12N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS12N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS12N3LLH5 reliable?

The price and inventory of STS12N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS12N3LLH5 is usually 5 days.

3.What payment methods are accepted for STS12N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS12N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS12N3LLH5?

STS12N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS12N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS12N3LLH5?

For technical support, including STS12N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS12N3LLH5 requirements.

6.How does Aetrix verify that STS12N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STS12N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS12N3LLH5 meets industry standards.

7.What is the process for return or replacement of STS12N3LLH5?

All STS12N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STS12N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS12N3LLH5 part is unused and in its original packaging.

Return procedure for STS12N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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