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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS13N3LLH5

Name: STS13N3LLH5
Brand: STMicroelectronics
SKU: STS13N3LLH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS13N3LLH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS13N3LLH5.pdf

Description:: MOSFET N-CH 30V 13A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS13N3LLH5 from STMicroelectronics is an N-channel 30 V, 13 A Power MOSFET in SO-8 package, featuring R_DS(on) = 0.006 Ω (typ.) at V_GS = 10 V, Q_g = 12 nC, and high avalanche ruggedness (E_AS = 180 mJ). It delivers ultra-low conduction and switching losses for high-efficiency DC-DC converters in server power supplies and POL modules.

For engineers reviewing the STS13N3LLH5 datasheet, STS13N3LLH5 pinout, STS13N3LLH5 application, or STS13N3LLH5 equivalent, key selection criteria include its SO-8 thermal performance (R_thj-pcb = 46 °C/W), low gate drive power requirement, and unclamped inductive switching capability under 24 V conditions.

Technical Context

This MOSFET implements ST's 5th-generation STripFET™ V process, optimized for R_DS(on) × Q_g minimization - achieving industry-benchmark figure-of-merit in SO-8. Its gate threshold voltage (V_GS(th) = 1 V min) enables compatibility with 3.3 V and 5 V logic-level drivers.

The device supports high-current pulsed operation (I_DM = 52 A) and features a robust body diode with t_rr = 25 ns and Q_rr = 17.5 nC at 150 °C, critical for synchronous rectification and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V input rails and transient margin
R_DS(on)	0.006 Ω (typ.) at V_GS = 10 V - enables <100 mW conduction loss at 13 A continuous current
Q_g	12 nC - reduces gate driver power dissipation and enables fast 10–20 ns switching transitions
I_D (cont)	13 A at T_C = 25 °C - rated per FR-4 PCB thermal condition (1 in², 2 oz Cu)
E_AS	180 mJ - supports reliable unclamped inductive switching in flyback and buck-boost converters
t_rr	25 ns - limits reverse recovery loss and EMI in high-frequency synchronous rectifiers

Pinout & Package

STS13N3LLH5 uses the standard SO-8 surface-mount package (ECOPACK® compliant), with pins 1–4 forming the source terminals (parallel-connected), pin 5 as drain, and pin 8 as gate. Thermal pad on underside enhances PCB heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (common)	Four parallel source leads reduce bond-wire inductance and improve current sharing in high-di/dt applications
5	Drain	Main power output terminal; connected to internal die drain metallization and exposed pad (non-isolated)
8	Gate	Control input requiring ≤22 V drive; low Q_g enables direct microcontroller GPIO driving at 3.3 V/5 V

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading FoM for SO-8 MOSFETs, enabling >95% efficiency in 500 kHz–1 MHz DC-DC stages
High avalanche ruggedness	Rated 8.5 A I_AV and 180 mJ E_AS - eliminates need for external snubbers in inductive load switching
Low gate drive power loss	Q_g = 12 nC at 10 V ensures <1.2 mW average gate power at 1 MHz switching frequency
Enhanced body diode performance	t_rr = 25 ns and Q_rr = 17.5 nC enable clean commutation in synchronous buck and LLC resonant converters

Applications

Server Point-of-Load Converters

Industrial DC-DC Modules

Use Scenario: High-density 12 V–1 V conversion delivering up to 100 A per rail in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET in multiphase buck converter stage, operating at 600–800 kHz.

Use Value: Low R_DS(on) and Q_g minimize conduction + switching loss, directly improving power density and thermal margin.

Use Scenario: Isolated 48 V–12 V DC-DC conversion in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Fast body diode recovery (t_rr = 25 ns) reduces cross-conduction loss and improves light-load efficiency.

Telecom Power Supplies

Automotive ADAS Power Management

Use Scenario: 48 V intermediate bus conversion feeding FPGA and ASIC core rails in 5G baseband units.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator powering 3.3 V/1.8 V logic domains.

Use Value: 30 V rating provides 20% overvoltage margin against telecom transients; SO-8 footprint simplifies layout and thermal management.

Use Scenario: 12 V–3.3 V/5 V conversion for camera sensor and radar processor subsystems in ADAS ECUs.

IC Role / Device Role / Timing Role: Load switch controlling power to safety-critical vision processing modules.

Use Value: High avalanche energy (180 mJ) withstands load dump and inductive kickback without failure during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0055 Ω (typ.), Q_g = 14.5 nC, SO-8, 30 V	Slightly higher gate charge increases driver loss; identical avalanche rating	Prefer when lowest possible R_DS(on) dominates over gate drive optimization
Si7157DP-T1-GE3	R_DS(on) = 0.0062 Ω (typ.), Q_g = 10.5 nC, SO-8, 30 V, logic-level	Lower Q_g improves high-frequency efficiency; lower V_GS(th) = 0.9 V enables 2.5 V drive	Prefer for 3.3 V/2.5 V controller interfaces and >1 MHz switching

Compared with IRF7470PBF and Si7157DP-T1-GE3, STS13N3LLH5 offers the best balance of ultra-low R_DS(on) × Q_g, proven avalanche robustness, and SO-8 thermal performance - making it optimal for space-constrained, high-reliability DC-DC designs where both efficiency and ruggedness are critical.

Availability

STS13N3LLH5 is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC-DC modules, and telecom power supplies requiring stable component supply and long-term manufacturability.

Supply support for STS13N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum safe operating temperature for STS13N3LLH5?

The junction temperature must not exceed 150 °C under continuous operation. With R_thj-pcb = 46 °C/W on a 1 in² FR-4 board (2 oz Cu), the device sustains 13 A at T_C = 25 °C. Derating is required above 25 °C case temperature at 0.02 W/°C, limiting usable current to 8.1 A at T_C = 100 °C.

Can STS13N3LLH5 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is specified down to 1 V (min), and typical R_DS(on) remains low (0.0091 Ω max) at V_GS = 4.5 V. At 3.3 V drive, it operates reliably in linear or partially enhanced mode, suitable for low-speed switching or load-switching applications.

Does STS13N3LLH5 have an integrated ESD protection diode?

No - the device does not include on-die ESD protection circuitry. External TVS or RC filtering is recommended on the gate line if exposed to handling or system-level ESD events, especially in automated assembly environments.

How is the SO-8 thermal pad connected internally?

The exposed thermal pad on the SO-8 package is electrically connected to the drain terminal (pin 5). It must be soldered to a large copper pour tied to the drain net to ensure both thermal performance and electrical integrity - floating or grounded pads will compromise reliability and thermal resistance.

STS13N3LLH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: +22V, -20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS13N3LLH5 FAQ

1.How can I place an order for STS13N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS13N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS13N3LLH5 reliable?

The price and inventory of STS13N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS13N3LLH5 is usually 5 days.

3.What payment methods are accepted for STS13N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS13N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS13N3LLH5?

STS13N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS13N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS13N3LLH5?

For technical support, including STS13N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS13N3LLH5 requirements.

6.How does Aetrix verify that STS13N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STS13N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS13N3LLH5 meets industry standards.

7.What is the process for return or replacement of STS13N3LLH5?

All STS13N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STS13N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS13N3LLH5 part is unused and in its original packaging.

Return procedure for STS13N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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