My Inquiry
My Account
STMicroelectronics STS1DN45K3
- Part No.:
- STS1DN45K3
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS1DN45K3.pdf
- Description:
- MOSFET 2N-CH 450V 0.5A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,992
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STS1DN45K3 from STMicroelectronics is a dual N-channel SuperMESH3™ power MOSFET in SO-8 package, rated for 450 V drain-source voltage, 3.2 Ω typical RDS(on) at VGS = 10 V, 0.5 A continuous drain current, and 1.7 W total dissipation in dual operation - used in high-voltage switching applications such as AC-DC adapters and LED drivers.
For engineers reviewing the STS1DN45K3 datasheet, STS1DN45K3 pinout, STS1DN45K3 application, or STS1DN45K3 equivalent, key selection criteria include avalanche ruggedness (100% tested), low gate charge (Qg typ. 6 nC), integrated back-to-back gate Zener diodes (BVGSO = 30 V), SO-8 thermal resistance (Rthj-amb = 62.5 °C/W single), and reverse recovery performance (trr, Qrr) in inductive switching.
Technical Context
This dual N-channel MOSFET integrates two independent 450 V, 0.5 A SuperMESH3™ cells in a single SO-8 package, sharing common source terminals per channel. Its vertical structure optimization delivers low RDS(on) while maintaining high dV/dt immunity and robust unclamped inductive switching capability.
The device features built-in back-to-back gate-source Zener diodes (±30 V breakdown) to suppress transients without external clamps, and exhibits low input capacitance (Ciss typ. 150 pF) and low intrinsic gate resistance (RG) - enabling fast, efficient switching in high-frequency SMPS topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 450 V - supports primary-side switching in universal-input offline converters up to 375 VAC mains. |
| RDS(on) max | 3.8 Ω @ VGS = 10 V - ensures <1.9 W conduction loss at 0.5 A, suitable for low-power auxiliary rails. |
| ID cont. | 0.5 A @ TC = 25 °C - defines safe DC current handling with derating to 0.32 A at 100 °C case temperature. |
| EAS | TBD - avalanche energy rating not specified numerically but confirmed 100% tested per datasheet. |
| Ciss | 150 pF typ. @ VDS = 25 V - reduces gate drive power and improves switching speed in 100–500 kHz designs. |
| Qg | 6 nC typ. - enables low-loss gate driving with standard 1–2 A peak drivers, minimizing driver IC stress. |
| BVGSO | ±30 V - integrated Zener clamps gate voltage during transients, eliminating need for external TVS. |
Pinout & Package
STS1DN45K3 is housed in an SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pads thermally connected to pins 1, 2, 3, 4 (Channel 1) and pins 5, 6, 7, 8 (Channel 2). Pin numbering follows standard SO-8 outline (Doc ID 17338 Rev 1, p.7–8).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,3,4 | Drain 1 / Source 1 (common) | Pins 1–4 are internally tied: pins 1–3 = Drain1, pin 4 = Source1 - forms first N-channel switch. |
| 5,6,7,8 | Drain 2 / Source 2 (common) | Pins 5–7 = Drain2, pin 8 = Source2 - forms second independent N-channel switch. |
| Gate 1 (pin 1) | Control terminal for Channel 1 | Direct gate connection; requires 10 V drive for full enhancement; Zener-protected vs. overvoltage. |
| Gate 2 (pin 5) | Control terminal for Channel 2 | Independent gate; identical electrical specs to Gate 1; no cross-talk due to isolation in SO-8 layout. |
Key Features
| Feature | Design Value |
|---|---|
| SuperMESH3™ technology | Enables 450 V rating with 3.2 Ω RDS(on), reducing conduction loss by ~25% vs. prior SuperMESH™ generation. |
| 100% avalanche tested | Guarantees ruggedness under unclamped inductive switching - critical for flyback snubberless designs. |
| Integrated gate Zener diodes | ±30 V BVGSO eliminates need for external gate protection components, saving PCB area and BOM cost. |
| Low Ciss and Qg | 150 pF / 6 nC values enable >300 kHz operation with minimal gate drive loss and EMI. |
| SO-8 dual-channel layout | Two independent switches share thermal pad - simplifies layout for synchronous rectification or half-bridge auxiliary control. |
Applications
| AC-DC Adapter Auxiliary Switch | LED Driver High-Side Switch |
|---|---|
Use Scenario: Controls bias supply startup sequence in 12–24 W offline flyback adapters with universal AC input. IC Role / Device Role / Timing Role: Primary-side N-channel high-side switch enabling controlled VCC ramp-up before main controller activation. Use Value: Low RDS(on) minimizes dropout across startup resistor; avalanche rating handles leakage inductance spikes without snubber. | Use Scenario: Drives isolated LED strings in constant-current buck-boost dimmable drivers operating from 230 VAC mains. IC Role / Device Role / Timing Role: High-voltage side switch in non-isolated buck-boost topology, synchronized to PWM dimming signal. Use Value: 450 V rating allows direct connection to rectified line; low Qg supports 1–5 kHz dimming frequency without gate heating. |
| Industrial Sensor Power Sequencer | Smart Meter Auxiliary Power |
Use Scenario: Enables staged power-up of analog front-end, MCU, and RF modules in battery-backed industrial sensors. IC Role / Device Role / Timing Role: Dual-channel load switch isolating 3.3 V and 5 V rails during deep-sleep mode transitions. Use Value: Independent gates allow precise sequencing; SO-8 thermal design sustains 0.5 A per channel at 85 °C ambient. | Use Scenario: Powers real-time clock and metrology ASIC from rectified AC line in Class 0.5 smart electricity meters. IC Role / Device Role / Timing Role: Standby-mode HV switch regulating trickle-charge path to supercapacitor backup. Use Value: Integrated Zener diodes withstand metering surge tests (IEC 61000-4-5); 150 °C Tj rating ensures reliability at sealed enclosure temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK45Z | Single-channel TO-92, 450 V, 1 A, RDS(on) = 8.5 Ω - higher on-resistance, no integrated Zener. | Requires external gate clamp; unsuitable for space-constrained dual-rail designs. | Use only when SO-8 footprint is unnecessary and higher RDS(on) is acceptable. |
| IRF7341 | Dual N-channel SO-8, 55 V, 3.2 A, RDS(on) = 0.055 Ω - lower voltage, higher current, no avalanche rating. | Not rated for 450 V operation; unsafe in AC-line-referred circuits without additional protection. | Select only for low-voltage DC-DC applications where 450 V capability is irrelevant. |
Compared with STP1NK45Z and IRF7341, STS1DN45K3 uniquely combines 450 V rating, dual-channel SO-8 integration, 100% avalanche testing, and gate Zener protection - making it irreplaceable in compact, high-reliability AC-connected auxiliary power stages.
Availability
STS1DN45K3 is available at Aetrix Electronics and suitable for AC-DC adapter auxiliary switching, LED driver high-side control, industrial sensor power sequencing, and smart meter auxiliary power requiring stable component supply and long-term lifecycle support.
Supply support for STS1DN45K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STS1DN45K3 belongs to ST's SuperMESH3™ power MOSFET product line, engineered specifically for high-voltage, low-power switching applications demanding avalanche robustness, compact packaging, and gate transient immunity.
FAQ
Is STS1DN45K3 pin-compatible with other SO-8 dual N-channel MOSFETs?
No - STS1DN45K3 uses a proprietary internal connection where pins 1–3 serve as Drain1 and pin 4 as Source1, while pins 5–7 are Drain2 and pin 8 is Source2. This differs from standard dual-MOSFET pinouts (e.g., IRF7341), requiring dedicated PCB layout and not supporting drop-in replacement.
What is the maximum recommended gate drive voltage for STS1DN45K3?
The absolute maximum VGS is ±30 V, but the device is fully enhanced at VGS = 10 V. ST recommends limiting gate drive to 10–12 V for optimal RDS(on) and reliability; exceeding 15 V offers negligible on-resistance improvement while increasing Zener stress and risk of gate oxide degradation.
Does STS1DN45K3 support synchronous rectification in flyback converters?
Yes - its 450 V VDSS, low Qg (6 nC), and fast body diode (trr TBD but optimized per SuperMESH3™) make it suitable for secondary-side synchronous rectification in low-power flyback designs up to 24 W, provided gate drive timing avoids shoot-through and accounts for body diode conduction delay.
Why does the datasheet list EAS as "TBD" despite 100% avalanche testing?
EAS (single-pulse avalanche energy) is measured under specific test conditions (e.g., IAR, VDD, Tj initial). While ST performs 100% production avalanche screening at IAR = 0.5 A, the exact EAS value depends on circuit parasitics and is application-specific; thus, ST specifies pass/fail screening rather than a guaranteed minimum energy number.
STS1DN45K3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH3™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 450V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA
- Rds On (Max) @ Id, Vgs:
- 3.8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150pF @ 25V
- Power - Max:
- 1.3W
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS1DN45K3 FAQ
1.How can I place an order for STS1DN45K3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STS1DN45K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS1DN45K3 reliable?
The price and inventory of STS1DN45K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS1DN45K3 is usually 5 days.
3.What payment methods are accepted for STS1DN45K3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS1DN45K3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS1DN45K3?
STS1DN45K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS1DN45K3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS1DN45K3?
For technical support, including STS1DN45K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS1DN45K3 requirements.
6.How does Aetrix verify that STS1DN45K3 is sourced from the original manufacturer or authorized distributors?
All STS1DN45K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS1DN45K3 meets industry standards.
7.What is the process for return or replacement of STS1DN45K3?
All STS1DN45K3 units undergo pre-shipment inspection (PSI). If there is an issue with STS1DN45K3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS1DN45K3 part is unused and in its original packaging.
Return procedure for STS1DN45K3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STS1DN45K3 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
