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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS1HNK60

Name: STS1HNK60
Brand: STMicroelectronics
SKU: STS1HNK60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS1HNK60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS1HNK60.pdf

Description:: MOSFET N-CH 600V 300MA 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,408

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Product details

Overview

STS1HNK60 from STMicroelectronics is an N-channel 600 V, 8 Ω R_DS(on), 0.3 A SuperMESH™ power MOSFET in SO-8 package, designed for low-power switching in offline SMPS and CFL ballasts where high dv/dt immunity and avalanche ruggedness are required.

For engineers reviewing the STS1HNK60 datasheet, STS1HNK60 pinout, STS1HNK60 application, or STS1HNK60 equivalent, key selection criteria include its 600 V breakdown voltage, 8 Ω typical on-resistance at V_GS = 10 V, 100% avalanche-tested reliability, 3 V/ns dv/dt capability, and SO-8 thermal performance with R_thj-amb = 62.5 °C/W.

Technical Context

This MOSFET employs ST's SuperMESH™ strip-based layout to minimize R_DS(on) while preserving high-voltage robustness. Its gate charge profile (Q_g = 7 nC typ., Q_gd = 3.4 nC) supports efficient hard-switching in low-frequency (<100 kHz) flyback and resonant converters.

The device integrates a fast-recovery source-drain diode (t_rr = 229 ns, Q_rr = 377 µC at T_j = 150°C) and is rated for unclamped inductive switching with guaranteed avalanche energy handling per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC SMPS without derating.
R_DS(on)	8 Ω typ. @ V_GS = 10 V - Enables <1.2 W conduction loss at 0.3 A DC, suitable for sub-5 W output designs.
I_D (cont.)	0.3 A @ T_C = 25°C - Matches thermal limits of SO-8 package with 2 W P_TOT rating.
dv/dt	3 V/ns - Resists false turn-on during fast transient coupling in high-noise EMI environments.
Q_g	7 nC typ. - Reduces gate drive power requirement and enables use with low-current bias windings in self-supplied flybacks.
t_rr	229 ns - Limits diode recovery losses and EMI in discontinuous conduction mode (DCM) operation.

Pinout & Package

SO-8 surface-mount package with exposed drain pad (pin 1–4: source; pin 5–8: drain; pin 3: gate). Thermal resistance junction-to-ambient is 62.5 °C/W under standard JEDEC PCB conditions.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4	Source	Common return path for load current; electrically tied to exposed drain pad via internal substrate connection in SO-8 variant.
5,6,7,8	Drain	High-voltage switch node; connected to exposed metal pad for enhanced thermal dissipation and reduced parasitic inductance.
3	Gate	Control input requiring ≥10 V for full enhancement; gate threshold V_GS(th) = 2.25–3.7 V ensures reliable turn-on with standard 12 V bias rails.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse unclamped inductive switching survival up to rated I_SD and V_DD, eliminating need for external snubbers in cost-sensitive CFLs.
Minimized gate charge	Q_g = 7 nC and Q_gd/Q_g = 48.6% reduce Miller-induced switching delay and improve controllability in low-power flybacks.
Extremely high dv/dt capability	3 V/ns rating prevents spurious turn-on during line transients or transformer leakage spikes without added gate resistors.
SuperMESH™ layout optimization	Delivers 8 Ω R_DS(on) at 600 V - 25% lower than prior-generation PowerMESH™ devices in same SO-8 footprint.

Applications

Compact Fluorescent Lamp (CFL) Ballast

Low-Power Flyback SMPS

Use Scenario: High-efficiency electronic ballast driving 5–11 W fluorescent tubes from 220–240 VAC mains.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating in DCM at ~40–60 kHz with integrated diode commutation.

Use Value: Avalanche ruggedness eliminates need for external clamping diodes; SO-8 footprint enables compact PCB layout with minimal heatsinking.

Use Scenario: 3–5 W auxiliary power supply for microcontrollers and sensors in industrial control modules.

IC Role / Device Role / Timing Role: Main power switch in primary-side regulated flyback converter with self-biased gate drive.

Use Value: Low Q_g allows direct drive from auxiliary winding; 600 V rating supports universal AC input without voltage divider networks.

Low-Cost Battery Charger

Standby Power Supply

Use Scenario: Wall-adaptor charger for NiMH/alkaline battery packs in consumer electronics.

IC Role / Device Role / Timing Role: High-side switch in quasi-resonant topology with fixed-frequency burst-mode control.

Use Value: 8 Ω R_DS(on) keeps conduction loss below 0.72 W at 0.3 A, enabling thermally safe operation in sealed plastic enclosures.

Use Scenario: Always-on 0.5–1 W standby rail powering real-time clocks and wake-up circuitry in white goods.

IC Role / Device Role / Timing Role: Low-duty-cycle switching element in discontinuous forward converter with zero-voltage switching assist.

Use Value: 3 V/ns dv/dt immunity prevents false triggering during main converter burst-mode transitions, ensuring stable standby regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	TO-92 package, identical R_DS(on) and V_DSS, but higher R_thj-amb (100 °C/W) and no SO-8 thermal pad.	Suitable only for <0.5 W convection-cooled designs; not recommended for board-level power density >0.3 W/cm².	Select when manual assembly or through-hole prototyping is required and thermal budget permits 30% higher junction temperature rise.
FQP1N60	600 V, 11 Ω R_DS(on), TO-220FP package, no avalanche rating, Q_g = 9.5 nC.	Lacks 100% avalanche testing and dv/dt immunity; requires external snubber in CFL applications.	Choose only if cost is primary constraint and design includes active overvoltage protection and slower switching edges.

Compared with STP1NK60Z and FQP1N60, STS1HNK60 uniquely combines SO-8 thermal efficiency, guaranteed avalanche ruggedness, and industry-leading 3 V/ns dv/dt tolerance-making it the only option qualified for high-reliability, space-constrained CFL and ultra-low-power SMPS without derating or supplemental protection.

Availability

STS1HNK60 is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, low-power flyback SMPS, and battery charger designs requiring stable component supply across extended production lifecycles.

Supply support for STS1HNK60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The SuperMESH™ MOSFET product line targets cost-sensitive, high-reliability offline power conversion applications below 10 W, emphasizing avalanche safety, thermal efficiency in small packages, and compatibility with simple gate-drive architectures.

FAQ

Is STS1HNK60 still in active production?

No-STS1HNK60 is an obsolete product per STMicroelectronics' official documentation (marked "Obsolete Product(s)" on all datasheet pages). It remains available through authorized legacy distributors and Aetrix Electronics' long-term inventory program with full traceability and extended warranty coverage.

Can STS1HNK60 replace STP1NK60Z in existing designs?

Yes, with mechanical and thermal advantages: both share identical electrical specs (600 V, 8 Ω, 0.3 A), but STS1HNK60's SO-8 package offers 37.5% lower R_thj-amb (62.5 vs. 100 °C/W) and integrated thermal pad, enabling higher ambient operation without redesign.

What is the maximum safe operating frequency for STS1HNK60?

STS1HNK60 is optimized for 20–100 kHz operation. Its 7 nC Q_g and 25 ns t_f support efficient switching up to 100 kHz in DCM flyback topologies; above this, conduction losses dominate due to R_DS(on), and thermal limits constrain usable duty cycle.

Does STS1HNK60 require a gate resistor for stability?

A 10–22 Ω series gate resistor is recommended to dampen ringing from PCB trace inductance and prevent oscillation, especially given its 3 V/ns dv/dt rating and low Q_gd/Q_g ratio-critical for noise immunity in CFL ballast EMI environments.

STS1HNK60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 300mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 156 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS1HNK60 FAQ

1.How can I place an order for STS1HNK60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS1HNK60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS1HNK60 reliable?

The price and inventory of STS1HNK60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS1HNK60 is usually 5 days.

3.What payment methods are accepted for STS1HNK60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS1HNK60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS1HNK60?

STS1HNK60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS1HNK60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS1HNK60?

For technical support, including STS1HNK60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS1HNK60 requirements.

6.How does Aetrix verify that STS1HNK60 is sourced from the original manufacturer or authorized distributors?

All STS1HNK60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS1HNK60 meets industry standards.

7.What is the process for return or replacement of STS1HNK60?

All STS1HNK60 units undergo pre-shipment inspection (PSI). If there is an issue with STS1HNK60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS1HNK60 part is unused and in its original packaging.

Return procedure for STS1HNK60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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