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STMicroelectronics STS1NK60Z

Part No.:
STS1NK60Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTS1NK60Z.pdf
Description:
MOSFET N-CH 600V 250MA 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,474

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Product details

Overview

STS1NK60Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 600 V drain-source voltage, 15 Ω max RDS(on), and 0.25 A continuous drain current in SO-8 package. It delivers high dv/dt capability (4.5 V/ns), low gate charge (6.9 nC), and 100% avalanche tested ruggedness for use in AC adaptors and low-power SMPS.

For engineers reviewing the STS1NK60Z datasheet, STS1NK60Z pinout, STS1NK60Z application, or STS1NK60Z equivalent, key selection criteria include its Zener-protected gate, 1 µA IDSS at 600 V, 140 ns reverse recovery time, and SO-8 thermal resistance of 62.5 °C/W - all critical for reliable high-voltage flyback and offline converter designs.

Technical Context

This device implements ST's SuperMESH process to reduce on-resistance while maintaining high-voltage integrity and fast switching. Its Zener-protected gate structure enables robust ESD tolerance (0.8 kV HBM) without external clamping, and its low Ciss (94 pF) and Coss (17.6 pF) support efficient high-frequency operation.

The MOSFET features intrinsic body diode with 1.6 V forward voltage at 0.25 A and 140 ns trr, optimized for discontinuous conduction mode (DCM) flyback topologies. Its safe operating area (SOA) is characterized up to 150 °C junction temperature with single-pulse limits defined for unclamped inductive switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies
RDS(on) max15 Ω - defines conduction loss at 0.25 A; typ. 11 Ω reduces thermal stress in SO-8 package
Qg6.9 nC - enables low-drive-strength gate control with minimal switching loss in 50–100 kHz SMPS
dv/dt capability4.5 V/ns - ensures immunity to parasitic turn-on during high-slew-rate transformer ringing
Coss17.6 pF - contributes to low capacitive switching loss and stable zero-voltage switching behavior
TJ range−55 to 150 °C - validated for industrial ambient environments with derated current above 100 °C
EAS100% avalanche tested - guarantees single-pulse energy handling without parameter shift or failure

Pinout & Package

STS1NK60Z is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pads on pins 5–8 for enhanced thermal dissipation. The package measures 4.9 mm × 6.0 mm × 1.75 mm and supports tape-and-reel automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
G (Pin 1)Gate terminalControl input with ±30 V rating; Zener-protected to withstand transient coupling in high-noise SMPS layouts
S (Pin 4)Source terminalReference node for gate drive; tied to power ground in common-source configuration
D (Pins 5, 6, 7, 8)Drain terminalHigh-voltage output node; paralleled pins reduce current density and improve thermal path to PCB copper

Key Features

FeatureDesign Value
Zener-protected gateIntegrated 30 V Zener clamp eliminates need for external gate protection components in cost-sensitive adapters
SuperMESH technologyReduces RDS(on) by ~25% vs. prior PowerMESH generation while preserving 600 V breakdown margin
Low Ciss/Coss ratio94 pF / 17.6 pF = 5.3 - improves Miller effect immunity and enables stable operation with high-side gate drivers
100% avalanche testedEach unit validated for single-pulse EAS robustness - critical for unclamped inductive load reliability
ESD-hardened0.8 kV HBM rating allows direct handling in non-ESD-controlled manufacturing without gate damage risk

Applications

AC AdaptorsLow-Power SMPS

Use Scenario: Universal-input (85–265 VAC) 5–12 W wall adapters powering IoT sensors and USB peripherals.

IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback converter; operates at 65–100 kHz with self-supplied gate drive.

Use Value: Zener protection prevents gate oxide rupture during line surges; 140 ns trr minimizes diode recovery loss in light-load burst mode.

Use Scenario: Compact open-frame power supply for industrial controllers and PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage switch in quasi-resonant (QR) flyback topology; synchronized to valley-switching controller.

Use Value: 4.5 V/ns dv/dt rating suppresses false triggering during transformer leakage spike; SO-8 footprint simplifies layout versus TO-92 alternatives.

Battery ChargersLED Drivers

Use Scenario: Multi-chemistry (Li-ion/NiMH) charger for portable medical devices with isolated feedback.

IC Role / Device Role / Timing Role: Primary-side switch enabling constant-current/constant-voltage regulation via optocoupler feedback.

Use Value: 1 µA IDSS at 600 V ensures negligible standby power loss; low Qg enables efficient operation below 10 kHz burst frequency.

Use Scenario: Isolated LED driver for emergency lighting with Class II insulation and no earth reference.

IC Role / Device Role / Timing Role: Primary-side switch in flyback-based constant-current regulator driving 12–24 V LED strings.

Use Value: Avalanche ruggedness tolerates LED string open-circuit transients; SO-8 thermal resistance supports >5000 h MTBF at 60 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-current MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP1NK60ZTO-92 package; higher RDS(on) (18 Ω max); same VDS, Qg, and Zener protectionThrough-hole assembly; lower power density; less effective heat spreading than SO-8Select when manual soldering or legacy board compatibility required
FQP1N60TO-220FP package; 11 Ω RDS(on) typ.; no integrated Zener; 2.5 W PTOTHigher power handling; requires external gate clamp; larger footprint and heightSelect when >0.25 A continuous current or forced-air cooling is needed

Compared with STP1NK60Z and FQP1N60, STS1NK60Z offers superior thermal performance in space-constrained designs due to SO-8's lower RthJA (62.5 vs. 120+ °C/W), tighter RDS(on) distribution, and guaranteed Zener protection - making it optimal for compact, high-reliability AC/DC converters.

Availability

STS1NK60Z is available at Aetrix Electronics and suitable for AC adaptors, low-power SMPS, battery chargers, and LED drivers requiring stable component supply across industrial and consumer production programs.

Supply support for STS1NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STS1NK60Z belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, low-component-count offline power conversion in sub-15 W applications where reliability, small size, and surge immunity are essential.

FAQ

Is STS1NK60Z suitable for continuous conduction mode (CCM) flyback operation?

No. With only 0.25 A continuous drain current and 2 W total power dissipation, STS1NK60Z is optimized for discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback topologies below 15 W. Its SO-8 thermal resistance (62.5 °C/W) limits sustained conduction in CCM, where peak currents exceed 0.4 A and duty cycles approach 50%.

Does STS1NK60Z require an external gate resistor for stability?

Yes - a 4.7 Ω gate resistor is specified in the datasheet test circuit for switching time characterization and is recommended for production designs. This value damps gate oscillation, controls turn-on/turn-off speed to limit EMI, and prevents unintended dv/dt-induced turn-on in high-noise environments typical of offline converters.

Can STS1NK60Z replace STP1NK60Z in existing designs?

Yes, with layout revision. Both share identical electrical specs (VDS, RDS(on), Qg, Zener protection), but STS1NK60Z uses SO-8 versus TO-92. The SO-8 footprint requires pad redesign and offers better thermal performance and automated assembly compatibility, though mechanical mounting differs.

What is the maximum recommended VGS for reliable long-term operation?

The absolute maximum VGS is ±30 V, but ST specifies 10 V for full enhancement in RDS(on) testing. For robust lifetime operation, gate drive should be limited to +12 V (with 10 V nominal) and −5 V minimum to avoid overstress during transients, leveraging the integrated Zener to clamp positive excursions beyond 15 V.

STS1NK60Z Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
94 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

STS1NK60Z FAQ

1.How can I place an order for STS1NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STS1NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS1NK60Z reliable?

The price and inventory of STS1NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS1NK60Z is usually 5 days.

3.What payment methods are accepted for STS1NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS1NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS1NK60Z?

STS1NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS1NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS1NK60Z?

For technical support, including STS1NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS1NK60Z requirements.

6.How does Aetrix verify that STS1NK60Z is sourced from the original manufacturer or authorized distributors?

All STS1NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS1NK60Z meets industry standards.

7.What is the process for return or replacement of STS1NK60Z?

All STS1NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STS1NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS1NK60Z part is unused and in its original packaging.

Return procedure for STS1NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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