STMicroelectronics STS20N3LLH6

Overview

STS20N3LLH6 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SO-8 package, rated for 30 V V_DS, 20 A continuous drain current at T_C = 25 °C, and 4.7 mΩ R_DS(on) at V_GS = 10 V. It features STripFET™ VI DeepGATE™ architecture optimized for low gate charge (17 nC) and high avalanche ruggedness, targeting high-efficiency DC-DC converters and synchronous rectification.

For engineers reviewing the STS20N3LLH6 datasheet, STS20N3LLH6 pinout, STS20N3LLH6 application, or STS20N3LLH6 equivalent, key selection criteria include its 4.5 V gate drive compatibility, 80 A pulsed drain capability, 1.1 V source-drain diode forward voltage, and SO-8 thermal resistance of 47 °C/W on FR-4 board - critical for compact power stage design.

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI process with DeepGATE™ gate structure to minimize R_DS(on) × Q_g product - a benchmark metric for switching efficiency. Its gate threshold voltage (1 V min) enables reliable turn-on with 4.5 V logic-level drive, while the 1690 pF input capacitance and 17 nC total gate charge support fast, low-loss switching at high frequencies.

The device integrates a robust intrinsic body diode with 14 ns reverse recovery time and 16.8 nC reverse recovery charge at 150 °C junction temperature, enabling stable operation in hard-switched and synchronous buck topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

STS20N3LLH6 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AA convention.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and DMN3020LFG-7, STS20N3LLH6 delivers superior R_DS(on) × Q_g balance in SO-8, enabling higher power density and lower gate drive loss - especially valuable in space-constrained, thermally demanding 20 A-class applications.

Availability

STS20N3LLH6 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor drivers, and USB-C PD power path designs requiring stable component supply and proven thermal performance in SO-8 format.

Supply support for STS20N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space- and thermally constrained applications.

FAQ

Is STS20N3LLH6 suitable for 5 V gate drive?

Yes. With a gate threshold voltage of 1–2.5 V and guaranteed R_DS(on) of 5.9 mΩ at V_GS = 4.5 V, STS20N3LLH6 fully enhances using standard 5 V logic or microcontroller GPIO. Its low Q_g (17 nC) also minimizes driver power consumption and propagation delay.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 12.5 A. The SOA curve (Figure 2 in datasheet) confirms single-pulse operation up to 80 A for ≤100 µs at V_DS ≤ 20 V, provided PCB copper area and thermal vias meet ST's SO-8 layout recommendations.

Does STS20N3LLH6 have built-in ESD protection?

No. STS20N3LLH6 does not integrate on-chip ESD protection diodes. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp to source) is recommended in handling and system-level surge environments per IEC 61000-4-2 Level 3.

Can the body diode be used for synchronous rectification?

Yes. The body diode exhibits 1.1 V forward voltage at 20 A and 14 ns reverse recovery time at 150 °C, making it viable for synchronous rectification in buck converters up to ~500 kHz. However, for >1 MHz operation or lowest loss, a discrete Schottky may still be preferred.