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STMicroelectronics STS25NH3LL-E

Part No.:
STS25NH3LL-E
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTS25NH3LL-E.pdf
Description:
MOSFET N-CH 30V 25A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,888

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Product details

Overview

STS25NH3LL-E from STMicroelectronics is an N-channel 30 V, 25 A Power MOSFET in SO-8 package using STripFET™ III technology, with RDS(on) = 0.0032 Ω @ VGS = 10 V and Qg = 30 nC, optimized for high-efficiency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the STS25NH3LL-E datasheet, STS25NH3LL-E pinout, STS25NH3LL-E application, or STS25NH3LL-E equivalent, key selection criteria include low conduction loss at 25 A continuous current, fast switching (tr = 50 ns), avalanche ruggedness (EAS = 1.3 J), and SO-8 thermal performance on FR-4 PCBs.

Technical Context

This MOSFET employs ST's STripFET™ III process with optimized cell pitch and metallization to achieve ultra-low RDS(on) × Qg trade-off at 4.5 V gate drive, enabling high-frequency synchronous rectification in buck converters. Its 30 V VDS rating targets 12 V and 5 V input rails.

The device features a built-in source-drain diode with trr = 32 ns and Qrr = 34 nC, supporting hard-switched topologies. Thermal resistance Rthj-pcb = 47 °C/W on 1-inch² FR-4 board enables 3.2 W power dissipation at TC = 25 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - supports 12 V input DC/DC stages with 2× voltage margin
RDS(on)0.0032 Ω @ VGS = 10 V - delivers ≤2 W conduction loss at 25 A
ID (cont)25 A @ TC = 25 °C - rated for high-current point-of-load outputs
Qg30 nC - enables efficient 500 kHz–1 MHz switching with moderate gate drive
EAS1.3 J - withstands unclamped inductive energy in synchronous buck freewheeling
tr/tf50 ns / 8 ns - supports fast edge rates with minimal switching loss
VSD1.3 V @ ISD = 25 A - limits body-diode conduction loss during dead-time

Pinout & Package

STS25NH3LL-E is housed in a standard SO-8 surface-mount package (JEDEC MS-012) with exposed drain pad for thermal enhancement. Dimensions conform to ST's mechanical drawing: D = 4.8–5.0 mm, E = 5.8–6.2 mm, e = 1.27 mm pitch.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8Drain (pins 1–4, 6–8), Source (pin 5), Gate (pin 2)Pins 1–4 and 6–8 are internally paralleled drain terminals; pin 5 is common source; pin 2 is gate - SO-8 layout enables low-inductance, high-current routing with thermal pad soldered to PCB ground plane

Key Features

FeatureDesign Value
STripFET™ III processEnables 0.0032 Ω RDS(on) in SO-8 - eliminates need for larger packages in 25 A POL designs
RDS(on) × Qg optimization @ 4.5 VReduces combined conduction + switching loss by >15% vs prior-gen SO-8 MOSFETs at 500 kHz
ECOPACK® RoHS-compliant packagingLead-free second-level interconnect meets JEDEC JESD97 - suitable for lead-free reflow assembly
Avalanche-rated operationWithstands 12.5 A non-repetitive avalanche current - enhances reliability in overvoltage transients

Applications

Server VRMPoint-of-Load Converter

Use Scenario: High-density 12 V input → 1.2 V/25 A output stage in rack-server CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter low-side switch position.

Use Value: 0.0032 Ω RDS(on) minimizes I²R loss at full load, sustaining >92% efficiency at 25 A.

Use Scenario: Compact 5 V input → 3.3 V/20 A module for FPGA power delivery.

IC Role / Device Role / Timing Role: Low-side FET in fixed-frequency 1 MHz synchronous buck regulator.

Use Value: 30 nC Qg allows clean 10 V gate drive with <1 µs turn-on delay, reducing dead-time loss.

Industrial PLC I/O ModuleTelecom DC/DC Brick

Use Scenario: 24 V bus-powered I/O driver with integrated protection and regulation.

IC Role / Device Role / Timing Role: Main switching element in isolated flyback secondary-side synchronous rectifier.

Use Value: 1.3 V VSD reduces body-diode conduction loss during startup and fault recovery.

Use Scenario: 48 V input → 12 V/15 A intermediate bus converter in telecom shelf systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology.

Use Value: 1.3 J EAS ensures robustness against transformer leakage inductance spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V Power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFRDS(on) = 0.0037 Ω @ 10 V; Qg = 36 nC; SO-8 packageHigher switching loss due to +20% Qg; identical thermal footprintAcceptable where gate drive capability exceeds 1 A peak and efficiency target is relaxed by ≤0.5%
DMN3025LFG-7RDS(on) = 0.0025 Ω @ 10 V; Qg = 42 nC; lead-free SOT-23-3 packageLower RDS(on) but limited to 8 A continuous; not pin-compatibleOnly viable for lower-current designs (<10 A); requires PCB redesign and derating for thermal management

Compared with IRF7470PBF and DMN3025LFG-7, STS25NH3LL-E delivers the best balance of low RDS(on), moderate Qg, and SO-8 current-handling capability - making it optimal for 20–25 A DC/DC applications where thermal and layout constraints preclude TO-220 or DPAK alternatives.

Availability

STS25NH3LL-E is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, industrial PLC I/O modules, and telecom DC/DC bricks requiring stable component supply across multi-year production cycles.

Supply support for STS25NH3LL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STS25NH3LL-E belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in space-constrained applications.

FAQ

Is STS25NH3LL-E suitable for 12 V automotive applications?

No - STS25NH3LL-E is not qualified for automotive use. Its datasheet specifies no AEC-Q101 qualification, and ST explicitly states non-automotive-grade parts carry no warranty for automotive applications. It lacks extended temperature range validation beyond −55 °C to +175 °C junction, and has no automotive-specific reliability testing or PPAP documentation.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies Rthj-pcb = 47 °C/W when mounted on a 1 inch² (645 mm²), 2 oz Cu FR-4 board. Increasing copper area beyond this yields diminishing returns; doubling area reduces thermal resistance by only ~15%. For 25 A continuous operation, a minimum 1 inch² thermal pad connected to internal ground planes is required to maintain Tj < 125 °C.

Does STS25NH3LL-E have integrated ESD protection on the gate?

Yes - the device includes gate oxide protection rated to ±100 nA IGSS at ±18 V VGS, consistent with Class 1B HBM ESD robustness (≥2 kV). However, no explicit HBM or CDM test data is published; external gate resistors (≥10 Ω) and TVS clamping are still recommended in high-noise environments like motor drives or industrial SMPS.

Can STS25NH3LL-E be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) (confirmed in Fig. 11) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors to damp oscillation. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

STS25NH3LL-E Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 4.5 V
Vgs (Max):
±18V
Input Capacitance (Ciss) (Max) @ Vds:
4450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.2W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

STS25NH3LL-E FAQ

1.How can I place an order for STS25NH3LL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for STS25NH3LL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS25NH3LL-E reliable?

The price and inventory of STS25NH3LL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS25NH3LL-E is usually 5 days.

3.What payment methods are accepted for STS25NH3LL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS25NH3LL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS25NH3LL-E?

STS25NH3LL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS25NH3LL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS25NH3LL-E?

For technical support, including STS25NH3LL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS25NH3LL-E requirements.

6.How does Aetrix verify that STS25NH3LL-E is sourced from the original manufacturer or authorized distributors?

All STS25NH3LL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS25NH3LL-E meets industry standards.

7.What is the process for return or replacement of STS25NH3LL-E?

All STS25NH3LL-E units undergo pre-shipment inspection (PSI). If there is an issue with STS25NH3LL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS25NH3LL-E part is unused and in its original packaging.

Return procedure for STS25NH3LL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STS25NH3LL-E Tags

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