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STMicroelectronics STS2DPF80
- Part No.:
- STS2DPF80
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS2DPF80.pdf
- Description:
- MOSFET 2P-CH 80V 2A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,546
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Product details
Overview
STS2DPF80 from STMicroelectronics is a dual P-channel enhancement-mode power MOSFET in SO-8 package, rated for 80 V VDS, 2.3 A continuous drain current, and 0.21 Ω typical RDS(on) at VGS = 10 V. It delivers rugged avalanche performance and low gate charge (20 nC) for efficient switching in compact DC/DC converters and battery-powered portable electronics.
For engineers reviewing the STS2DPF80 datasheet, STS2DPF80 pinout, STS2DPF80 application, or STS2DPF80 equivalent, key selection criteria include its dual P-channel topology, SO-8 thermal resistance (62.5 °C/W on 1 in² FR-4), source-drain diode forward voltage (1.2 V at 1 A), and safe operating area limits for pulsed operation up to 8 A.
Technical Context
This device implements ST's second-generation StripFET™ process with single-feature-size architecture, enabling high cell density and reproducible RDS(on) across wafers. Its dual P-channel configuration supports high-side synchronous rectification and load-switching topologies without external level-shifting circuitry.
The MOSFET features fully specified dynamic parameters: 13.5 ns turn-on delay, 32 ns turn-off delay, and 47 ns reverse recovery time with 87 nC Qrr - critical for minimizing switching losses in 300–500 kHz DC/DC stages used in cellular phone power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports input rails up to 48 V nominal with 1.7× safety margin for transient spikes |
| RDS(on) | 0.21 Ω (typ.) at VGS = 10 V - enables <1 W conduction loss at 2.3 A continuous current |
| ID (cont) | 2.3 A at TC = 25°C - defines maximum steady-state load capability with standard SO-8 PCB copper |
| Qg | 20 nC - determines gate drive energy requirement and influences minimum achievable switching frequency |
| VSD | 1.2 V at ISD = 1 A - specifies forward drop of integrated body diode for freewheeling paths |
| Rthj-PCB | 62.5 °C/W - quantifies thermal path from junction to PCB copper, critical for derating in sealed enclosures |
Pinout & Package
STS2DPF80 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain tab connected to pins 1, 2, 3, and 4 for enhanced thermal dissipation. The dual die shares common source terminals and independent gate/drain connections per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (Channel 1 & 2) | Common high-current output nodes tied to internal drain metallization; electrically connected to exposed tab |
| 5, 6 | Source (Channel 1) | Low-side reference node for first P-MOSFET; connects to ground or return path in half-bridge |
| 7, 8 | Source (Channel 2) | Independent low-side reference for second P-MOSFET; enables dual-load isolation or redundancy |
| G1 (pin 5) | Gate (Channel 1) | Control terminal for first transistor; requires negative VGS relative to source for turn-on |
| G2 (pin 6) | Gate (Channel 2) | Separate control input enabling independent switching or paralleled operation with matched timing |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Eliminates need for high-side N-MOSFET gate drivers in buck converter synchronous rectification |
| Rugged avalanche rating | Guaranteed unclamped inductive switching capability without external snubbers in DC/DC flyback designs |
| Low Qgd/Qg ratio (4.9/20 nC) | Reduces Miller-induced shoot-through risk during hard commutation in bidirectional power stages |
| StripFET™ process | Enables ±15% RDS(on) uniformity across production lots - critical for parallel MOSFET reliability |
| SO-8 with exposed drain | Provides 2.5 W power dissipation at TC = 25°C using standard PCB layout without heatsinks |
Applications
| DC/DC Converters | Battery Management |
|---|---|
Use Scenario: Step-down regulation in handheld medical monitors with 12 V input and 3.3 V/2 A output. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-efficiency buck converter, replacing Schottky diode to reduce conduction loss by >40%. Use Value: Achieves >92% efficiency at full load due to 0.21 Ω RDS(on) and low Qrr (87 nC), minimizing thermal stress in confined chassis. | Use Scenario: Dual-battery selector in ruggedized field tablets with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET load switch controlling power path between primary and backup Li-ion cells. Use Value: Enables bidirectional blocking (VDS = 80 V) and fast turn-off (<32 ns td(off)) to prevent cross-conduction during battery switchover. |
| Cellular Phone Power | Display Power Sequencing |
Use Scenario: Core voltage regulation for application processor in 4G LTE smartphones. IC Role / Device Role / Timing Role: High-side switch in multi-phase PMIC output stage, delivering 1.1 V @ 3 A with tight ripple control. Use Value: Low gate charge (20 nC) allows clean PWM edge control at 2 MHz switching frequency, reducing output capacitor count. | Use Scenario: OLED display bias supply with programmable on/off sequencing in automotive infotainment units. IC Role / Device Role / Timing Role: Independent enable switch for AVDD and VGH rails, ensuring correct power-up order per display controller spec. Use Value: Dual-channel isolation prevents latch-up during cold-start; SO-8 footprint simplifies layout routing in narrow bezel designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.19 Ω (lower), but VDS = 60 V and Qg = 28 nC (higher) | Not suitable for 48 V input systems; better for 24 V battery-powered tools | Select when lower on-resistance outweighs voltage rating and gate drive overhead |
| IRF7319PBF | RDS(on) = 0.25 Ω (higher), VDS = 30 V, Qg = 22 nC, SO-8 with separate sources | Limited to ≤12 V systems; lacks avalanche rating documentation | Prefer for cost-sensitive 5 V logic-level applications where ruggedness is secondary |
Compared with Si7851DP and IRF7319PBF, STS2DPF80 uniquely balances 80 V rating, 0.21 Ω RDS(on), and documented avalanche capability - making it optimal for industrial DC/DC converters requiring both overvoltage resilience and thermal efficiency.
Availability
STS2DPF80 is available at Aetrix Electronics and suitable for DC/DC converters, battery management systems, and cellular phone power supplies requiring stable component supply and long-term industrial availability.
Supply support for STS2DPF80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.
The STS2DPF80 belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-density, high-reliability power conversion in space-constrained portable and nomadic equipment.
FAQ
Is STS2DPF80 RoHS compliant?
Yes, STS2DPF80 conforms to RoHS Directive 2011/65/EU and is lead-free with halogen-free packaging. The device was qualified under ST's standard environmental compliance program, with full material declarations available in the official "STS2DPF80 Material Declaration" document dated June 2004.
Can STS2DPF80 be used in linear mode operation?
No - STS2DPF80 is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) curve is defined only for pulse conditions (≤300 µs, 1.5% duty cycle), and continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(on).
What is the maximum gate-source voltage for reliable operation?
The absolute maximum VGS is ±20 V, but ST recommends limiting continuous operation to ±12 V to ensure long-term gate oxide integrity. Gate transients exceeding ±15 V must be clamped with Zener diodes, as specified in ST Application Note AN419.
Does STS2DPF80 have integrated ESD protection?
No - STS2DPF80 has no built-in ESD protection circuitry. Per the datasheet, gate-body leakage (IGSS) is specified at ±100 nA, indicating absence of ESD diodes. External TVS devices or series resistors are required for handling >2 kV HBM events in assembly or end-use environments.
STS2DPF80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 80V
- Current - Continuous Drain (Id) @ 25°C:
- 2A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 739pF @ 25V
- Power - Max:
- 2.5W
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS2DPF80 FAQ
1.How can I place an order for STS2DPF80 through Aetrix?
Please submit a Request for Quotation (RFQ) for STS2DPF80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS2DPF80 reliable?
The price and inventory of STS2DPF80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS2DPF80 is usually 5 days.
3.What payment methods are accepted for STS2DPF80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS2DPF80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS2DPF80?
STS2DPF80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS2DPF80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS2DPF80?
For technical support, including STS2DPF80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS2DPF80 requirements.
6.How does Aetrix verify that STS2DPF80 is sourced from the original manufacturer or authorized distributors?
All STS2DPF80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS2DPF80 meets industry standards.
7.What is the process for return or replacement of STS2DPF80?
All STS2DPF80 units undergo pre-shipment inspection (PSI). If there is an issue with STS2DPF80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS2DPF80 part is unused and in its original packaging.
Return procedure for STS2DPF80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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