STMicroelectronics STS3DNE60L

Overview

STS3DNE60L from STMicroelectronics is a dual N-channel 60 V, 3 A, 65 mΩ (at VGS = 10 V) surface-mount Power MOSFET in SO-8 package, optimized for low-voltage DC-DC conversion and battery-powered motor drive. It features low threshold gate drive (VGS(th) = 1 V typ.), rugged avalanche capability, and integrated source-drain diode with 1.2 V forward voltage at 3 A.

For engineers reviewing the STS3DNE60L datasheet, STS3DNE60L pinout, STS3DNE60L application, or STS3DNE60L equivalent, key selection criteria include RDS(on) at 4.5 V (80 mΩ max), total gate charge (13.5 nC at VGS = 4.5 V), switching speed (tr = 30 ns, tf = 16 ns), and thermal resistance (78 °C/W dual operation on FR-4).

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single SO-8 package with shared source terminals per channel, enabling half-bridge or synchronous rectifier topologies without external paralleling. Its StripFET™ process delivers high cell density and tight RDS(on) distribution (±15% typical).

The device supports standard logic-level gate drive (VGS(th) = 1 V min, 1.5 V typ.) and operates reliably up to TJ = 150 °C. Its source-drain diode exhibits fast reverse recovery (trr = 60 ns typ., Qrr = 130 nC) under 100 A/µs di/dt, critical for synchronous buck converters.

Key Specifications

Pinout & Package

SO-8 package (standard outline, JEDEC MS-012AC), 1.27 mm pitch, dual-channel layout with isolated drains and common source pins (pins 4 & 5). Thermal pad not present; power dissipation relies on copper pour under source leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with STS3DNE60L, STP3NK60Z trades dual-channel integration and surface-mount compatibility for higher voltage tolerance, while Si7852DP offers lower RDS(on) and higher current but sacrifices 60 V blocking capability-making STS3DNE60L optimal for 24–48 V portable power systems requiring compact dual-switch functionality.

Availability

STS3DNE60L is available at Aetrix Electronics and suitable for DC motor drive, DC-DC synchronous buck converters, and battery management in nomadic equipment requiring stable component supply and long-term industrial availability.

Supply support for STS3DNE60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MEMS, power, and microcontroller products for industrial, automotive, and consumer markets.

The STS3DNE60L belongs to ST's StripFET™ Power MOSFET product line, engineered specifically for high-efficiency, space-constrained portable and battery-operated power systems demanding low gate drive voltage and robust thermal performance.

FAQ

What is the maximum safe operating temperature for STS3DNE60L?

The absolute maximum junction temperature is 150 °C, and the storage temperature range is –55 °C to +150 °C. Derating begins above 25 °C ambient; with 78 °C/W thermal resistance on FR-4, sustained 3 A operation requires heatsinking or airflow to maintain TJ < 130 °C.

Can STS3DNE60L be driven directly by a 3.3 V microcontroller?

No-its gate threshold voltage is 1 V min but full enhancement requires ≥4.5 V for RDS(on) ≤80 mΩ. At 3.3 V, RDS(on) rises significantly (>200 mΩ), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3 V logic interface.

Is the SO-8 package thermally enhanced with an exposed pad?

No-the STS3DNE60L uses a standard SO-8 outline (MS-012AC) without an exposed thermal pad. Thermal performance relies entirely on copper area connected to pins 4 and 5 (common source) and traces routed to internal/external ground planes.

Does STS3DNE60L support avalanche energy rating specifications?

Yes-the datasheet confirms unclamped inductive switching capability (Figure 2), indicating specified single-pulse avalanche energy rating. However, no numerical EAS value is published; design margins should assume ≤100 mJ based on SO-8 package limitations and 3 A ID rating.