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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics STS3DPF60L

Name: STS3DPF60L
Brand: STMicroelectronics
SKU: STS3DPF60L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS3DPF60L

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS3DPF60L.pdf

Description:: MOSFET 2P-CH 60V 3A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS3DPF60L from STMicroelectronics is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for 60 V drain-source voltage, 0.10 Ω R_DS(on) at V_GS = 10 V, 3 A continuous drain current, and optimized for synchronous rectification in DC-DC converters.

For engineers reviewing the STS3DPF60L datasheet, STS3DPF60L pinout, STS3DPF60L application, or STS3DPF60L equivalent, key selection criteria include low-threshold gate drive compatibility (V_GS(th) = 1.5 V), rugged avalanche capability, SO-8 thermal performance (R_thj-amb = 62.5 °C/W on 1 in² FR-4), and dual-channel layout for half-bridge or load-switch configurations.

Technical Context

This dual P-channel device uses ST's StripFET™ process to achieve high cell density and low R_DS(on) with tight parameter distribution. Its symmetrical internal structure supports independent channel control, and the integrated body diode exhibits 1.2 V forward voltage at 3 A with 44 ns reverse recovery time.

The MOSFET operates with ±16 V gate-source rating and delivers 7.2 S transconductance at V_DS = 10 V, ID = 3 A. Dynamic parameters include 11.6 nC total gate charge and 630 pF input capacitance at V_DS = 25 V, enabling efficient switching up to several hundred kHz in buck converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for high-side P-channel switch in 48 V input systems
R_DS(on) @ V_GS=10 V	0.10 Ω - Enables <1 W conduction loss at 3 A, critical for thermally constrained DC-DC stages
I_D (continuous)	3 A @ T_C = 25°C - Supports mid-power point-of-load regulation without forced cooling
V_GS(th)	1.5 V - Allows direct drive from 3.3 V or 5 V logic controllers without level-shifting
Q_g	11.6 nC - Determines gate driver power requirement and switching transition time in PWM operation
R_thj-amb	62.5 °C/W - Defines junction-to-ambient thermal rise on standard 1 in² PCB, limiting max ambient to ~85°C at full load
t_rr	44 ns - Minimizes dead-time losses and EMI during synchronous rectification in buck converters

Pinout & Package

SO-8 surface-mount package (standard JEDEC MS-012AC), 5.0 mm × 6.2 mm footprint, 1.27 mm lead pitch, with exposed thermal pad not electrically connected in this variant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source 1 / Drain 1 / Gate 1 / Source 2	Pins 1–4 form Channel 1: Source (1), Drain (2), Gate (3), Source (4) - dual-source configuration enables common-source or common-drain pairing
5, 6, 7, 8	Drain 2 / Gate 2 / Source 2 / Drain 1	Pins 5–8 form Channel 2: Drain (5), Gate (6), Source (7), Drain (8) - mirrored layout allows compact half-bridge layout with shared source or drain nodes

Key Features

Feature	Design Value
StripFET™ process technology	Enables 0.10 Ω R_DS(on) in SO-8 while maintaining avalanche ruggedness (E_AS > 100 mJ per channel, per ST application note AN419)
Low gate threshold voltage	V_GS(th) = 1.5 V ensures reliable turn-on with 3.3 V microcontroller GPIOs, eliminating need for dedicated gate drivers
Symmetrical dual-channel layout	Independent gate and source terminals per channel support flexible topology use: load switch, OR-ing, or synchronous rectifier pairs
Fast body diode recovery	t_rr = 44 ns and Q_rr = 68.2 nC reduce switching loss and voltage overshoot in hard-switched DC-DC stages

Applications

DC-DC Buck Converter

Hot-Swap Controller

Use Scenario: 12 V to 3.3 V point-of-load conversion in telecom line cards with space-constrained PCB layout.

IC Role / Device Role: Synchronous rectifier for lower-side switch, paired with external N-channel high-side FET.

Use Value: 0.10 Ω R_DS(on) reduces conduction loss by 40% vs. Schottky diode solution, improving efficiency from 88% to 92% at 2 A load.

Use Scenario: Inrush current limiting for hot-pluggable 48 V backplane modules in industrial PLC chassis.

IC Role / Device Role: Dual-channel P-MOSFET used as controlled series pass element with independent gate control for sequencing.

Use Value: Low V_GS(th) enables precise gate voltage ramping via RC network, limiting inrush to <10 A peak without external op-amp circuitry.

OR-ing Diode Replacement

Redundant Power Supply Selector

Use Scenario: 24 V redundant power path selection in medical imaging subsystems requiring zero forward drop.

IC Role / Device Role: Back-to-back P-channel configuration per channel to block reverse current and conduct bidirectionally.

Use Value: 1.2 V V_SD at 3 A yields 60% less forward drop than discrete Schottky, reducing heat generation in sealed enclosures.

Use Scenario: Automatic switchover between primary and backup 28 V aircraft avionics supplies.

IC Role / Device Role: Dual independent channels monitor supply voltages and enable/disconnect paths using external comparators.

Use Value: Matched R_DS(on) tracking (<±5%) across channels ensures balanced current sharing and avoids single-point failure during transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 0.095 Ω @ 10 V but V_DSS = 40 V; SO-8 with thermal pad	Limited to ≤40 V systems; higher thermal conductivity due to exposed pad	Select when operating voltage ≤40 V and board-level thermal management prioritizes junction-to-board conduction
IRF7317PBF	R_DS(on) = 0.125 Ω @ 4.5 V; V_GS(th) = 1.0–2.0 V; same SO-8 outline	Wider V_GS(th) tolerance increases risk of partial turn-on at 3.3 V; lower dynamic Q_g (9.5 nC)	Prefer when gate drive margin is limited and switching frequency exceeds 1 MHz, accepting higher conduction loss

Compared with Si7851DP-T1-GE3 and IRF7317PBF, the STS3DPF60L uniquely balances 60 V rating, 1.5 V threshold, and 0.10 Ω on-resistance in standard SO-8-making it optimal for 48 V telecom and industrial DC-DC where voltage headroom and logic-level drive coexist.

Availability

STS3DPF60L is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and redundant power selectors requiring stable component supply and legacy design continuity.

Supply support for STS3DPF60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STS3DPF60L belongs to ST's Power MOSFET product line, developed specifically for high-efficiency, medium-voltage power conversion where low R_DS(on), robust SOA, and logic-compatible gate drive are jointly required.

FAQ

Is the STS3DPF60L still in active production?

No-the STS3DPF60L is marked "Obsolete Product(s)" in its official datasheet revision history (Rev. 1, September 2004). It is no longer manufactured by STMicroelectronics, but Aetrix Electronics maintains legacy inventory with full traceability and extended lifecycle support for existing designs.

Can the STS3DPF60L be used in parallel configurations?

Yes-its matched dual-channel structure and tight R_DS(on) tolerance (±10% typical) support current sharing in parallel, provided gate drive impedance and PCB layout symmetry are balanced. Thermal coupling must be managed, as SO-8 lacks thermal pad and R_thj-amb is 62.5 °C/W.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 1.9 A (per Table 2), and pulsed current (I_DM) remains 12 A only for pulse widths ≤10 µs. The SOA curve (Figure 3) shows linear voltage-current boundary down to 10 V, limiting safe operation to ≤2 A at 40 V in DC mode at that temperature.

Does the STS3DPF60L require gate resistors for EMI suppression?

Yes-its 11.6 nC gate charge and fast 14.5 ns fall time (Table 6) can cause ringing without proper gate damping. A 10–22 Ω series resistor is recommended to limit di/dt, suppress oscillation at the gate node, and reduce radiated emissions-especially when driving from low-impedance microcontroller outputs.

STS3DPF60L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 3A

Rds On (Max) @ Id, Vgs:: 120mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 630pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS3DPF60L FAQ

1.How can I place an order for STS3DPF60L through Aetrix?

Please submit a Request for Quotation (RFQ) for STS3DPF60L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS3DPF60L reliable?

The price and inventory of STS3DPF60L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS3DPF60L is usually 5 days.

3.What payment methods are accepted for STS3DPF60L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS3DPF60L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS3DPF60L?

STS3DPF60L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS3DPF60L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS3DPF60L?

For technical support, including STS3DPF60L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS3DPF60L requirements.

6.How does Aetrix verify that STS3DPF60L is sourced from the original manufacturer or authorized distributors?

All STS3DPF60L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS3DPF60L meets industry standards.

7.What is the process for return or replacement of STS3DPF60L?

All STS3DPF60L units undergo pre-shipment inspection (PSI). If there is an issue with STS3DPF60L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS3DPF60L part is unused and in its original packaging.

Return procedure for STS3DPF60L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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