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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS3P6F6

Name: STS3P6F6
Brand: STMicroelectronics
SKU: STS3P6F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS3P6F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS3P6F6.pdf

Description:: MOSFET P-CH 60V 3A 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:3,070

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Product details

Overview

STS3P6F6 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET using STripFET™ F6 technology in SO-8 package, rated for 60 V V_DS, 0.13 Ω typical R_DS(on) at V_GS = 10 V, and 3 A continuous drain current at T_pcb = 25 °C. It delivers high avalanche ruggedness and low gate charge (6.4 nC), making it suitable for compact DC-DC converter high-side switches and load switching in industrial power supplies.

For engineers reviewing the STS3P6F6 datasheet, STS3P6F6 pinout, STS3P6F6 application, or STS3P6F6 equivalent, key selection criteria include verified P-channel polarity handling, SO-8 thermal resistance (R_thj-pcb = 47 °C/W on FR-4), reverse recovery performance (Q_rr = 17.8 nC), and gate drive compatibility with 10 V logic-level control.

Technical Context

This device implements a 6th-generation STripFET™ F6 cell structure optimized for reduced R_DS(on) × Q_g product-confirmed at 0.13 Ω typ. and 6.4 nC total gate charge. Its internal layout supports bidirectional source-drain diode conduction with 1.1 V forward voltage at 3 A and 20 ns reverse recovery time under defined inductive switching conditions.

The SO-8 package enables surface-mount integration with validated thermal performance: junction-to-PCB resistance of 47 °C/W on 15 mm², 2 oz Cu FR-4 board. Absolute maximum ratings specify ±20 V gate-source voltage tolerance and 150 °C maximum operating junction temperature, supporting robust operation in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 48 V nominal with margin for transients in industrial DC systems
R_DS(on) typ.	0.13 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 3 A, critical for thermally limited PCB layouts
Q_g	6.4 nC - reduces gate driver power demand and switching transition time in high-frequency SMPS
I_D cont.	3 A @ T_pcb = 25 °C - defines safe continuous current capability without heatsink in standard SO-8 mounting
V_GS(th)	2–4 V - ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs when used with level-shifting
Q_rr	17.8 nC - quantifies stored charge in body diode during hard commutation, directly impacting EMI and snubber design
R_thj-pcb	47 °C/W - measured on FR-4 board (15 mm², 2 oz Cu), establishes thermal derating baseline for layout planning

Pinout & Package

STS3P6F6 is housed in a standard SO-8 surface-mount package per JEDEC MS-012, with exposed drain pads (pins 5–8) for enhanced thermal dissipation and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for P-channel operation; tied to higher potential rail in high-side switch configuration
4	Gate	Control terminal requiring negative V_GS relative to source to turn on; compatible with standard logic-level drivers via level shift
5, 6, 7, 8	Drain	Power output node; electrically and thermally connected to exposed pad for PCB heat spreading

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading figure-of-merit enabling high-efficiency, high-frequency switching in space-constrained converters
High avalanche ruggedness	Rated for repetitive unclamped inductive switching events without degradation-critical for relay/motor drive protection
Low gate drive power losses	6.4 nC Q_g minimizes driver IC power consumption and self-heating in battery-powered or thermally isolated systems
SO-8 thermal performance	47 °C/W R_thj-pcb allows direct PCB copper pour cooling-eliminates need for discrete heatsinks in ≤3 A applications

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: High-side synchronous rectification in 24 V input buck converters powering PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated level-shifting controller.

Use Value: 0.13 Ω R_DS(on) limits conduction loss to <1.2 W at full load, maintaining <85 °C junction temperature on standard 2-layer PCB.

Use Scenario: Load switching for interior lighting and window lift actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by automotive MCU with integrated pre-driver.

Use Value: 150 °C max T_j rating and 12 A pulsed current capability support ASIL-B compliant fault-tolerant load management.

Smart Power Outlets

Programmable Logic Controllers

Use Scenario: Individual outlet switching in multi-port USB-C PD power strips with overcurrent and thermal monitoring.

IC Role / Device Role / Timing Role: Final-stage power switch isolating downstream ports; driven by isolated digital signal from system controller.

Use Value: 17.8 nC Q_rr and 20 ns t_rr enable clean zero-voltage switching transitions, reducing EMI in densely packed consumer enclosures.

Use Scenario: Field I/O module power distribution with short-circuit and overload protection in modular rack systems.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated current sense feedback path to safety monitor ASIC.

Use Value: Avalanche-rated construction withstands inductive kickback from solenoid/valve loads without external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	R_DS(on) = 0.3 Ω @ V_GS = −10 V; larger TO-220 package; 100 V rating	Higher voltage margin but 2.3× higher conduction loss and no SO-8 thermal optimization	Select only if >60 V blocking or through-hole assembly required
DMG2305UVT	R_DS(on) = 0.045 Ω @ V_GS = −4.5 V; smaller SOT-23 package; 20 V rating	Lower voltage rating and lower current (2.8 A) limit use to low-power logic-level loads	Prefer for 3.3 V–5 V gate drive simplicity where 60 V rating is unnecessary

Compared with IRF9530NPbF and DMG2305UVT, STS3P6F6 uniquely balances 60 V rating, SO-8 thermal efficiency, and sub-0.15 Ω R_DS(on) for mid-power industrial switching-offering optimal trade-off between voltage headroom, board area, and thermal management in surface-mount designs.

Availability

STS3P6F6 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and programmable logic controllers requiring stable component supply and long-term production continuity.

Supply support for STS3P6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller products for industrial, automotive, and consumer markets.

STS3P6F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space- and thermally-constrained applications.

FAQ

What is the correct gate drive polarity for STS3P6F6 in a high-side switch configuration?

STS3P6F6 is a P-channel MOSFET requiring negative gate-to-source voltage (V_GS) for turn-on. In high-side configuration, the source connects to the positive rail; gate must be pulled down toward ground or below source potential-typically using a level-shifting driver or charge pump to achieve −10 V V_GS for full enhancement.

Does STS3P6F6 require an external flyback diode when switching inductive loads?

No external flyback diode is required due to its integrated source-drain body diode, characterized with 1.1 V forward voltage at 3 A and 20 ns reverse recovery time. However, for high-di/dt or high-repetition-rate inductive switching, a Schottky clamp may still be added to reduce EMI and improve reliability.

How does the SO-8 package of STS3P6F6 perform thermally compared to DPAK alternatives?

STS3P6F6's SO-8 package achieves 47 °C/W junction-to-PCB thermal resistance on a 15 mm², 2 oz Cu FR-4 board-comparable to many DPAK devices in similar power classes. Unlike DPAK, SO-8 offers smaller footprint and better manufacturability, though DPAK may offer slightly lower R_thj-amb with heatsinking.

Can STS3P6F6 be used in parallel with identical units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 11) ensures inherent current sharing when paralleled. Layout symmetry, matched gate drive paths, and individual gate resistors are required to minimize dynamic imbalance and ensure stable operation at combined currents up to 6 A.

STS3P6F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 48 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS3P6F6 FAQ

1.How can I place an order for STS3P6F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS3P6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS3P6F6 reliable?

The price and inventory of STS3P6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS3P6F6 is usually 5 days.

3.What payment methods are accepted for STS3P6F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS3P6F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS3P6F6?

STS3P6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS3P6F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS3P6F6?

For technical support, including STS3P6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS3P6F6 requirements.

6.How does Aetrix verify that STS3P6F6 is sourced from the original manufacturer or authorized distributors?

All STS3P6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS3P6F6 meets industry standards.

7.What is the process for return or replacement of STS3P6F6?

All STS3P6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STS3P6F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS3P6F6 part is unused and in its original packaging.

Return procedure for STS3P6F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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