STMicroelectronics STS4DNF30L

Overview

STS4DNF30L from STMicroelectronics is a dual N-channel 30 V, 4 A, 0.039 Ω (at V_GS = 10 V) Power MOSFET in SO-8 package, designed for high-efficiency switching applications such as DC-DC converters and motor drivers. It features low gate threshold voltage (1 V), rugged avalanche capability, and optimized gate charge (6.5 nC typical) for fast switching with reduced drive loss.

For engineers reviewing the STS4DNF30L datasheet, STS4DNF30L pinout, STS4DNF30L application, or STS4DNF30L equivalent, key selection criteria include its dual-channel configuration, 30 V V_DSS, R_DS(on) ≤ 0.050 Ω at 4.5 V gate drive, thermal resistance of 62.5 °C/W on FR-4, and SO-8 footprint compatibility with automated SMT assembly.

Technical Context

This device implements ST's second-generation STripFET™ process with single-feature-size strip architecture, enabling high cell density and low on-resistance while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its dual-die SO-8 layout supports independent channel control and shared source connection per half-bridge configuration.

The MOSFET exhibits low input capacitance (C_iss = 330 pF), moderate reverse transfer capacitance (C_rss = 40 pF), and fast switching times (t_d(on) = 11 ns, t_f = 22 ns at I_D = 2 A, R_G = 4.7 Ω), making it suitable for medium-frequency (<1 MHz) synchronous rectification and load switching.

Key Specifications

Pinout & Package

STS4DNF30L uses the standard SO-8 surface-mount package (ECOPACK® compliant), with dual N-channel dies sharing common source terminals and isolated gate/drain connections. The outline conforms to JEDEC MS-012, enabling compatibility with automated pick-and-place and reflow processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with STP4NK60Z and DMN3025LSD, STS4DNF30L offers balanced trade-offs: SO-8 dual-channel integration, 1 V gate threshold for 3.3 V logic compatibility, and proven ruggedness in unclamped inductive loads-making it optimal for cost-sensitive, medium-power industrial switching where layout simplicity and reliability are prioritized.

Availability

STS4DNF30L is available at Aetrix Electronics and suitable for brushless DC motor control, USB-C power delivery switching, industrial PLC output modules, and LED driver current regulation requiring stable component supply and long-term design-in continuity.

Supply support for STS4DNF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, power, and microcontroller solutions with vertical manufacturing capabilities and broad IP portfolio.

The STS4DNF30L belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, medium-voltage switching in space-constrained industrial and consumer power systems where low gate drive voltage and dual-channel integration are essential.

FAQ

Is STS4DNF30L still in active production?

No-STS4DNF30L is marked as Obsolete Product(s) in ST's official documentation (Doc ID 8985 Rev 3, June 2010). While not actively manufactured, Aetrix Electronics maintains legacy inventory and supports design continuity through controlled distribution, cross-reference guidance, and alternative sourcing pathways for existing production programs.

Can STS4DNF30L be used in synchronous rectification?

Yes-its low R_DS(on) (0.039 Ω), fast reverse recovery (t_rr = 30 ns), and low Q_gd (2 nC) make it suitable for synchronous rectification in 12–24 V DC-DC converters up to ~500 kHz. However, gate drive must ensure clean, non-overlapping turn-on/turn-off to avoid shoot-through, especially given its 1 V threshold sensitivity.

What is the maximum safe operating area (SOA) for pulsed operation?

Per Figure 2 in the datasheet, STS4DNF30L supports 16 A pulsed drain current (I_DM) with pulse width limited by SOA constraints. At V_DS = 15 V, it sustains 8 A for 10 ms; at V_DS = 30 V, maximum pulse current drops to ~4 A for 10 µs. Derating is required above T_C = 25°C per the thermal resistance curve (Figure 3).

Does STS4DNF30L have built-in ESD protection?

The datasheet does not specify human-body model (HBM) or charged-device model (CDM) ESD ratings. Gate leakage (±100 nA at ±16 V) and threshold voltage stability suggest basic process-level protection, but external gate resistors (≥10 Ω) and TVS diodes are recommended for board-level ESD immunity in automated handling and field deployment environments.