STMicroelectronics STS4DNF60

Overview

STS4DNF60 from STMicroelectronics is an N-channel 60V power MOSFET in SO-8 package, featuring R_DS(on) ≤ 0.090 Ω at V_GS = 10 V and I_D = 2 A, 4 A continuous drain current at T_C = 25°C, and rugged avalanche capability. It serves as a low-side switching device in DC-DC converters, motor drivers, and load management circuits where fast switching and thermal robustness are required.

For engineers reviewing the STS4DNF60 datasheet, STS4DNF60 pinout, STS4DNF60 application, or STS4DNF60 equivalent, key selection criteria include its 60 V V_DS, 0.070 Ω typical on-resistance, 10 nC total gate charge, SO-8 thermal performance (R_thj-pcb = 62.5 °C/W), and unclamped inductive switching capability per JEDEC JESD47.

Technical Context

This MOSFET employs ST's STripFET™ II "single feature size" strip-based process, enabling high cell density and low R_DS(on) without compromising avalanche energy rating. Its gate threshold voltage (2–4 V) supports standard 5 V and 10 V logic-level drive, and its source-drain diode exhibits t_rr = 45 ns at T_j = 25°C with Q_rr = 68 nC under defined di/dt conditions.

The device operates across –55 to +150°C junction temperature range and delivers 2 W total dissipation at T_C = 25°C. Its dynamic parameters-including C_iss = 315 pF, C_oss = 70 pF, and switching times (t_d(on) = 7 ns, t_f = 6 ns)-are characterized under resistive-load conditions with R_G = 4.7 Ω and V_DD = 30 V.

Key Specifications

Pinout & Package

STS4DNF60 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant, lead-free second-level interconnect), with exposed drain pad for enhanced thermal conduction. Pin 1–4 are source terminals (internally paralleled), Pin 5–8 are drain terminals (internally paralleled), and Gate is on Pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STP4NK60Z and IRF7470PBF, STS4DNF60 offers optimal balance of SO-8 footprint, 0.070 Ω R_DS(on), and 10 nC Q_g-making it preferred for space-constrained, medium-frequency, medium-power SMT applications where thermal management relies on PCB layout.

Availability

STS4DNF60 is available at Aetrix Electronics and suitable for DC-DC converter secondary-side rectification, brushed DC motor driver low-side switching, hot-swap load control, and LED backlight dimming requiring stable component supply and legacy-design continuity.

Supply support for STS4DNF60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, high-reliability power conversion and motor control applications-emphasizing low R_DS(on), fast switching, and ruggedness in compact packages.

FAQ

Is STS4DNF60 suitable for 3.3 V logic-level gate drive?

No. With V_GS(th) ranging from 2 V to 4 V, STS4DNF60 achieves only partial enhancement at 3.3 V, resulting in elevated R_DS(on) (>0.2 Ω) and excessive conduction loss. It is designed for 5 V or 10 V gate drive to ensure full enhancement and specified 0.070 Ω on-resistance. Use logic-level MOSFETs like STL11N3LLH6 for true 3.3 V compatibility.

What is the maximum safe operating frequency for STS4DNF60 in a hard-switched buck converter?

Based on measured t_r = 18 ns and t_f = 6 ns with R_G = 4.7 Ω, STS4DNF60 supports practical hard-switched operation up to 500 kHz. Above this, switching losses dominate, and thermal derating becomes critical-especially above 2.5 A continuous current at T_C > 60°C. For >1 MHz operation, consider devices with lower Q_g and C_oss.

Does STS4DNF60 include an integrated body diode, and is it optimized for reverse recovery?

Yes, it features a monolithic source-drain body diode with t_rr = 45 ns and Q_rr = 68 nC at T_j = 25°C. While not a dedicated "fast recovery" diode, its parameters are characterized and usable in synchronous rectification and freewheeling roles-but not recommended for high-di/dt ZVS or resonant topologies without external optimization.

Can STS4DNF60 be used in parallel configurations to increase current handling?

Yes-its SO-8 layout with multiple paralleled source and drain pins provides inherent current-sharing symmetry. However, gate drive must be matched (equal trace length and resistance), and thermal coupling between devices must be uniform. Derate total current by ≥20% versus sum of individual I_D ratings due to thermal runaway risk at elevated temperatures.