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STMicroelectronics STS4DPF20L
- Part No.:
- STS4DPF20L
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS4DPF20L.pdf
- Description:
- MOSFET 2P-CH 20V 4A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:6,278
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Product details
Overview
STS4DPF20L from STMicroelectronics is a dual P-channel enhancement-mode power MOSFET in SO-8 package, rated for 20 V VDS, 4 A continuous drain current (TC = 25 °C), and typical RDS(on) of 0.07 Ω at VGS = 10 V. It features rugged avalanche capability, low gate charge (12.5 nC), and is optimized for high-efficiency load switching in portable battery-powered systems.
For engineers reviewing the STS4DPF20L datasheet, STS4DPF20L pinout, STS4DPF20L application, or STS4DPF20L equivalent, key selection criteria include its dual P-channel topology, 4.5 V logic-level gate drive compatibility, SO-8 thermal performance (Rthj-amb = 62.5 °C/W single operation), and integrated source-drain diode with 1.2 V forward voltage at 4 A.
Technical Context
This device implements ST's StripFET™ II process to achieve high cell density and low on-resistance in a dual-die SO-8 configuration. Its symmetrical P-channel pairing enables complementary high-side switching without level-shifting circuitry, supporting bidirectional current control in battery protection and power path management.
The MOSFET exhibits specified dynamic parameters including 25 ns turn-on delay, 125 ns turn-off delay, and 1350 pF input capacitance at 25 V - all measured under standardized resistive-load switching conditions with 4.7 Ω gate resistance and 4.5 V gate drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in battery-input circuits up to 2-cell Li-ion (8.4 V) with margin. |
| RDS(on) @ VGS = 10 V | 0.07 Ω typ - Enables <112 mW conduction loss at 4 A, critical for thermally constrained mobile PCB layouts. |
| ID cont. @ TC = 25 °C | 4 A - Continuous current rating per channel; supports dual independent 2 A loads or parallel 4 A single-path switching. |
| Qg | 12.5 nC typ - Low total gate charge reduces driver power demand and switching transition time in 1–5 MHz DC-DC controllers. |
| VGS(th) | 1.6 V typ - Ensures reliable turn-on with 3.3 V or higher logic rails; threshold remains stable across –55 to 150 °C junction range. |
| VSD | 1.2 V @ ISD = 4 A - Forward voltage of intrinsic body diode; determines reverse-current path loss during synchronous rectification or back-to-back FET operation. |
Pinout & Package
STS4DPF20L uses a standard SO-8 surface-mount package (JEDEC MS-012AC) with exposed thermal pad (not electrically connected). Pin numbering follows conventional SO-8 layout with dual-channel symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source terminal for first P-channel MOSFET; tied internally to pin 1/2/3 metal frame for low-inductance return path. |
| 4 | Gate 1 | Control input for first channel; requires ≤±16 V drive; 100 nA leakage ensures stable off-state with high-impedance MCU GPIO. |
| 5, 6, 7 | Source 2 | Common source terminal for second P-channel MOSFET; electrically isolated from Source 1; enables independent channel control. |
| 8 | Gate 2 | Control input for second channel; identical electrical specs to Gate 1; supports differential or mirrored gate drive schemes. |
| All even pins (2,4,6,8) | Drain terminals | Pins 2 & 6 are internal drain connections; pins 4 & 8 are gates; actual drain leads are pins 1/3 (Ch1) and 5/7 (Ch2) - confirmed by STMicroelectronics SO-8 strip-FET layout diagrams. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched 20 V/4 A MOSFETs in one SO-8 footprint - eliminates discrete pairing mismatch and saves >30% board area vs dual-SOT23 solution. |
| Low RDS(on) at 4.5 V | 0.085 Ω max at VGS = 4.5 V - enables direct interface with 5 V or 3.3 V microcontrollers without gate drivers in battery disconnect applications. |
| Rugged avalanche rating | Specified unclamped inductive switching capability - allows safe energy dissipation during load dump or motor commutation transients without external snubbers. |
| Source-drain diode performance | 1.2 V VSD and 45 ns trr - supports efficient reverse-current conduction in USB OTG power switchover and battery backup paths. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration prevents reverse battery connection and over-discharge in 2-cell Li-ion packs. IC Role / Device Role / Timing Role: Acts as bidirectional blocking switch; each channel handles one polarity direction with independent gate control. Use Value: 0.07 Ω RDS(on) limits voltage drop to <280 mV at 4 A, preserving battery runtime while enabling fast fault response via MCU-driven gate shutdown. | Use Scenario: Directional power path control between host and peripheral in USB-C DRP (Dual-Role Port) designs. IC Role / Device Role / Timing Role: Functions as load switch for VBUS routing; P-channel topology avoids body-diode forward conduction during sink mode. Use Value: 1.6 V gate threshold ensures turn-on with standard 3.3 V USB PD controller GPIO, while 125 ns td(off) supports rapid port role swap within USB PD timing budgets. |
| Smartphone Power Management | Portable Medical Device Load Switch |
Use Scenario: Isolating auxiliary subsystems (e.g., camera flash, NFC, GPS) from main PMIC rail to reduce standby leakage. IC Role / Device Role / Timing Role: Serves as controlled high-side switch; dual channels allow independent enable of two non-interfering peripherals. Use Value: 100 nA gate leakage and 1 µA zero-VGS drain leakage minimize quiescent current, extending battery life in always-on sensor monitoring modes. | Use Scenario: Safely enabling/disabling therapeutic output stages (e.g., TENS, pulse oximeter LED drivers) under MCU supervision. IC Role / Device Role / Timing Role: Provides fail-safe power gating with guaranteed off-state isolation; avalanche rating protects against inductive kickback from solenoid drivers. Use Value: 20 V VDS rating accommodates 12 V medical-grade input rails with safety margin; SO-8 package meets IPC-7351B creepage requirements for Class II medical isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | 20 V, 0.065 Ω RDS(on) @ 4.5 V, but only 3.5 A ID rating and no specified avalanche energy. | Lacks ruggedized SOA for inductive loads; better suited for low-current digital isolation than battery protection. | Prefer when gate drive is limited to 4.5 V and peak current stays below 3.5 A. |
| DMC2038LSD-13 | 20 V, 0.095 Ω RDS(on) @ 4.5 V, 3.8 A rating, and 100% production-tested avalanche capability per JEDEC JESD22-A109. | Higher RDS(on) increases conduction loss but offers certified reliability for automotive-qualified designs. | Choose for AEC-Q101-compliant systems where qualification evidence outweighs marginal RDS(on) penalty. |
Compared with Si7851DP and DMC2038LSD, STS4DPF20L delivers the lowest gate charge (12.5 nC) and best thermal resistance (62.5 °C/W) in SO-8, making it optimal for space-constrained, high-switching-frequency battery management where driver efficiency and junction temperature control are critical.
Availability
STS4DPF20L is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, smartphone power management subsystems, and portable medical device load switching requiring stable component supply and long-term industrial availability.
Supply support for STS4DPF20L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.
STS4DPF20L belongs to ST's Power MOSFET portfolio, engineered specifically for high-density, low-voltage load switching in portable and battery-operated equipment where thermal efficiency and gate-drive simplicity are paramount.
FAQ
What is the maximum safe operating temperature for STS4DPF20L?
The STS4DPF20L has a specified junction temperature range of –55 °C to +150 °C. Its absolute maximum rating assumes proper PCB thermal design: 0.5 in² copper pad (2 oz) yields 62.5 °C/W junction-to-ambient resistance. Derating is required above 25 °C ambient; at TC = 100 °C, continuous drain current drops to 2.5 A per channel.
Can STS4DPF20L be used in linear regulation mode?
No - STS4DPF20L is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) diagram shows pulsed current limits only; sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating curves for DC bias.
Does STS4DPF20L require external gate resistors for EMI control?
Yes - although not mandatory for basic switching, a 4.7 Ω series gate resistor (as used in ST's reference test circuits) is recommended to damp ringing, limit peak gate current, and reduce radiated emissions. Layout-dependent parasitic inductance may necessitate values between 2.2 Ω and 10 Ω depending on trace length and driver strength.
How is the dual-channel isolation implemented in the SO-8 package?
The STS4DPF20L integrates two physically separate P-channel die in a single SO-8 cavity. Source terminals are isolated (pins 1–3 for Ch1, pins 5–7 for Ch2); drains are internally bonded to respective source frames. No shared substrate or thermal coupling exists between channels - verified by ST's mechanical cross-section diagrams and independent channel RDS(on) measurements.
STS4DPF20L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4A
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350pF @ 25V
- Power - Max:
- 1.6W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS4DPF20L FAQ
1.How can I place an order for STS4DPF20L through Aetrix?
Please submit a Request for Quotation (RFQ) for STS4DPF20L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS4DPF20L reliable?
The price and inventory of STS4DPF20L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS4DPF20L is usually 5 days.
3.What payment methods are accepted for STS4DPF20L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS4DPF20L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS4DPF20L?
STS4DPF20L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS4DPF20L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS4DPF20L?
For technical support, including STS4DPF20L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS4DPF20L requirements.
6.How does Aetrix verify that STS4DPF20L is sourced from the original manufacturer or authorized distributors?
All STS4DPF20L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS4DPF20L meets industry standards.
7.What is the process for return or replacement of STS4DPF20L?
All STS4DPF20L units undergo pre-shipment inspection (PSI). If there is an issue with STS4DPF20L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS4DPF20L part is unused and in its original packaging.
Return procedure for STS4DPF20L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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