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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics STS4DPF30L

Name: STS4DPF30L
Brand: STMicroelectronics
SKU: STS4DPF30L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS4DPF30L

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS4DPF30L.pdf

Description:: MOSFET 2P-CH 30V 4A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS4DPF30L from STMicroelectronics is a dual P-channel enhancement-mode power MOSFET in SO-8 package, rated for 30 V V_DSS, 4 A continuous drain current (T_C = 25°C), and typical R_DS(on) of 0.07 Ω at V_GS = 10 V. It delivers low-threshold drive capability (V_GS(th) = 1 V) and rugged avalanche performance for compact DC-DC converter and battery management circuits.

For engineers reviewing the STS4DPF30L datasheet, STS4DPF30L pinout, STS4DPF30L application, or STS4DPF30L equivalent, key selection factors include its dual P-channel topology, SO-8 thermal resistance (R_thj-amb = 78 °C/W single operation), reverse diode forward voltage (V_SD = 1.2 V), gate charge (Q_g = 12.5 nC), and safe operating area-limited pulsed current (I_DM = 16 A).

Technical Context

This device implements ST's StripFET™ II process with single-feature-size geometry to achieve high cell density and low on-resistance while maintaining robust avalanche energy rating. Its dual P-channel configuration enables synchronous rectification or load-switching without external level-shifting circuitry.

The MOSFET features integrated body diode with t_rr = 45 ns and Q_rr = 36 nC under specified conditions, supporting high-frequency switching in buck converters. Gate threshold voltage of 1 V allows direct interfacing with 1.8 V/3.3 V logic controllers without gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; defines upper limit for input rail in portable DC-DC stages
R_DS(on) (typ.)	0.07 Ω @ V_GS = 10 V - Enables <140 mW conduction loss at 2 A, critical for thermally constrained handheld PCBs
I_D (cont.)	4 A @ T_C = 25°C - Supports dual-channel 2 A loads or single 4 A power path in battery protection IC co-location
V_GS(th)	1 V (min.) - Allows direct drive from low-voltage microcontrollers or PMIC GPIOs without level shifters
Q_g	12.5 nC @ V_GS = 5 V - Determines gate driver power requirement and switching speed in 500 kHz–1 MHz converters
R_thj-amb	78 °C/W (single op.) - Sets thermal derating slope on standard FR-4; requires heatsinking above ~1.3 W dissipation
t_rr	45 ns - Limits reverse recovery losses during hard-switched synchronous rectification

Pinout & Package

STS4DPF30L uses an SO-8 surface-mount package with exposed thermal pad (non-electrical). Pin numbering follows JEDEC MS-012 standard, with pins 1–4 assigned to Channel 1 and pins 5–8 to Channel 2.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source 1 / Drain 1 (shared)	Pins 1–4 are internally connected as Source 1; Drain 1 is common to all four pins - optimized for low-inductance source return in high-side switch layout
5, 6, 7, 8	Source 2 / Drain 2 (shared)	Pins 5–8 are internally connected as Source 2; Drain 2 is common - enables independent control of two P-FET paths in dual-battery or OR-ing applications
Gate 1 (pin 3)	Control terminal for Channel 1	Pin 3 is dedicated gate input for first channel; isolated from Gate 2 (pin 6) - supports asymmetric PWM control
Gate 2 (pin 6)	Control terminal for Channel 2	Pin 6 is dedicated gate input for second channel; electrically separated from Gate 1 - eliminates crosstalk in phase-shifted topologies

Key Features

Feature	Design Value
StripFET™ II process	Enables 0.07 Ω R_DS(on) in SO-8 without copper clip - reduces board area vs. DPAK alternatives by >60%
Low V_GS(th)	1 V minimum threshold - ensures full enhancement with 1.8 V I/O rails, eliminating need for auxiliary gate bias supplies
Dual independent channels	Separate gate terminals (pins 3 & 6) and isolated source/drain nets - supports independent timing control in dual-phase converters
Rugged avalanche rating	Specified unclamped inductive switching capability - sustains 100% rated current during transient overloads without failure
Integrated body diode	V_SD = 1.2 V @ 4 A - provides bidirectional current path for freewheeling in synchronous buck topologies

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in lithium-ion battery packs for tablets.

IC Role / Device Role: P-channel back-to-back switch controlling charge/discharge path with independent gate control.

Use Value: 0.07 Ω R_DS(on) limits voltage drop to <280 mV at 4 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Bidirectional 20 V/3 A power path switching in USB-C PD 3.0 sink implementations.

IC Role / Device Role: Dual P-FET used in OR-ing configuration to select between adapter and battery supply.

Use Value: Independent gate control (pins 3 & 6) allows precise sequencing to prevent shoot-through during source handover.

Portable DC-DC Synchronous Rectifier

Smartphone Power Management Unit

Use Scenario: Low-side synchronous rectification in 3.3 V/2 A buck converter for AP SoC core rail.

IC Role / Device Role: P-channel FET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 45 ns reverse recovery time minimizes switching loss during dead-time transitions at 1 MHz switching frequency.

Use Scenario: Load switching for camera module and display backlight in LTE smartphones.

IC Role / Device Role: Dual-channel power switch enabling independent enable/disable of peripheral subsystems.

Use Value: 1 V gate threshold allows direct control from baseband processor GPIOs, reducing BOM count by eliminating level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 0.055 Ω @ V_GS = 10 V; higher Q_g = 22 nC; SO-8 with thermal pad	Lower conduction loss but slower switching due to higher gate charge - better for <500 kHz apps	Prefer when thermal budget is tighter than switching loss budget
IRF7319PBF	R_DS(on) = 0.075 Ω @ V_GS = 4.5 V; V_GS(th) = 1.2 V; same SO-8 footprint	Higher threshold voltage requires stronger gate drive - less compatible with 1.8 V logic	Choose only if existing design already uses IRF7319 layout and drive strength is confirmed

Compared with Si7851DP-T1-GE3 and IRF7319PBF, STS4DPF30L offers the lowest gate threshold (1 V) and best balance of R_DS(on) and Q_g for 1–2 MHz portable DC-DC designs, while maintaining full SO-8 mechanical compatibility without thermal pad dependency.

Availability

STS4DPF30L is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and portable DC-DC synchronous rectifiers requiring stable component supply across production lifecycles.

Supply support for STS4DPF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The STS4DPF30L belongs to ST's StripFET™ power MOSFET product line, engineered specifically for high-efficiency, space-constrained portable power systems where low R_DS(on), low V_GS(th), and dual-channel integration are critical.

FAQ

What is the maximum safe operating temperature for STS4DPF30L?

The STS4DPF30L has a maximum junction temperature (T_j) of 150°C and storage temperature range of –55°C to +150°C. Thermal derating begins above 25°C ambient when mounted on 1 inch² FR-4 with 2 oz copper; R_thj-amb rises to 62.5 °C/W in dual-operation mode, limiting continuous power dissipation to ~1.6 W at 70°C ambient.

Can STS4DPF30L be used in linear regulator applications?

No - STS4DPF30L is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) is defined only for switching applications with pulse-width limitations. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at low V_DS/high I_D bias points.

Is the body diode in STS4DPF30L suitable for reverse polarity protection?

Yes - the intrinsic body diode supports reverse current up to 4 A continuous (I_SD) and 16 A pulsed (I_SDM). With V_SD = 1.2 V at 4 A, it provides functional reverse-polarity blocking when oriented with source tied to battery positive, though discrete TVS or Schottky may be added for faster response in surge events.

Does STS4DPF30L require external gate resistors for EMI control?

Yes - gate resistance directly affects switching speed and EMI generation. The datasheet specifies t_d(on)/t_r and t_d(off)/t_f using R_G = 4.7 Ω. For EMI-sensitive applications like smartphone RF sections, increasing R_G to 10–22 Ω reduces dv/dt and ringing, albeit at the cost of increased switching loss.

STS4DPF30L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 4A

Rds On (Max) @ Id, Vgs:: 80mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:: 1350pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS4DPF30L FAQ

1.How can I place an order for STS4DPF30L through Aetrix?

Please submit a Request for Quotation (RFQ) for STS4DPF30L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS4DPF30L reliable?

The price and inventory of STS4DPF30L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS4DPF30L is usually 5 days.

3.What payment methods are accepted for STS4DPF30L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS4DPF30L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS4DPF30L?

STS4DPF30L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS4DPF30L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS4DPF30L?

For technical support, including STS4DPF30L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS4DPF30L requirements.

6.How does Aetrix verify that STS4DPF30L is sourced from the original manufacturer or authorized distributors?

All STS4DPF30L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS4DPF30L meets industry standards.

7.What is the process for return or replacement of STS4DPF30L?

All STS4DPF30L units undergo pre-shipment inspection (PSI). If there is an issue with STS4DPF30L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS4DPF30L part is unused and in its original packaging.

Return procedure for STS4DPF30L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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