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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS4NF100

Name: STS4NF100
Brand: STMicroelectronics
SKU: STS4NF100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS4NF100

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS4NF100.pdf

Description:: MOSFET N-CH 100V 4A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,269

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Product details

Overview

STS4NF100 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SO-8 package, rated for 100 V drain-source voltage, 0.065 Ω typical R_DS(on) at V_GS = 10 V and I_D = 2 A, 4 A continuous drain current at T_C = 25°C, and 100% avalanche tested. It serves as a primary switch in isolated DC-DC converters for telecom and computing power supplies.

For engineers reviewing the STS4NF100 datasheet, STS4NF100 pinout, STS4NF100 application, or STS4NF100 equivalent, key selection criteria include its low gate charge (30–41 nC), high dv/dt immunity, SO-8 thermal performance (R_thj-a = 50 °C/W on FR-4), and source-drain diode recovery characteristics (t_rr = 100 ns, Q_rr = 375 nC) in hard-switched topologies.

Technical Context

This STripFET™ II device uses a planar vertical structure optimized to minimize input capacitance (C_iss = 870 pF) and total gate charge (Q_g = 30–41 nC), enabling efficient operation in high-frequency switching applications up to several hundred kHz. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The MOSFET features robust unclamped inductive switching capability, validated by 100% avalanche testing, and includes a co-packaged body diode with fast reverse recovery (t_rr = 100 ns) and low forward voltage (V_SD = 1.2 V at I_SD = 4 A), supporting synchronous rectification and freewheeling roles in buck and flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V telecom systems with margin for transient spikes
R_DS(on) typ.	0.065 Ω at V_GS = 10 V, I_D = 2 A - enables <130 mW conduction loss at 4 A DC
Q_g	30–41 nC - reduces driver power demand and switching transition time in 300–500 kHz converters
t_rr	100 ns - limits diode reverse recovery loss and EMI in hard-switched topologies
R_thj-a	50 °C/W on FR-4 board - allows ~2.5 W dissipation with ≤125°C junction rise above ambient
I_D cont.	4 A at T_C = 25°C - defines maximum steady-state current under heatsink-cooled conditions
V_GS(th)	2–4 V - compatible with 3.3 V and 5 V microcontroller GPIO or dedicated gate drivers

Pinout & Package

STS4NF100 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal conduction. Pin 1–4 are source terminals (internally paralleled), Pin 5–8 are drain terminals (internally paralleled), and Gate is on Pin 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 4	Source	Common source node; low-inductance parallel connection reduces conduction loss and improves current sharing
Pin 3	Gate	Control terminal; requires <41 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Pin 5–8	Drain	High-side switching node; internally connected to exposed copper pad for thermal and electrical path to PCB ground plane

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss to 870 pF and Q_g to 30–41 nC, enabling higher efficiency at >300 kHz switching
100% avalanche tested	Guarantees ruggedness under unclamped inductive load conditions without derating
Exceptional dv/dt capability	Withstands >50 V/ns transients without spurious turn-on, critical for high-noise SMPS environments
Application-oriented characterization	Includes SOA curves, diode recovery data, and gate charge plots directly usable in converter design

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 300–500 kHz with synchronous rectification on secondary side.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, achieving >92% peak efficiency at full load.

Use Scenario: High-efficiency point-of-load (POL) converter supplying CPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: Main switching element in multiphase buck converter with gate drive IC and current sensing.

Use Value: Fast t_rr and low C_oss minimize dead-time losses and improve light-load regulation.

Industrial PLC Power Supplies

Networking Equipment SMPS

Use Scenario: Input-stage switch in 24 V/48 V industrial DC-DC module powering I/O and communication interfaces.

IC Role / Device Role / Timing Role: Isolated flyback primary switch with integrated snubber and overvoltage clamping.

Use Value: Avalanche rating and dv/dt immunity ensure reliability in electrically noisy factory-floor environments.

Use Scenario: Secondary-side synchronous rectifier in 12 V auxiliary supply of Ethernet switches and routers.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode in self-driven synchronous rectification circuit.

Use Value: V_SD = 1.2 V and Q_rr = 375 nC enable lower forward drop and reduced recovery loss vs. discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 0.044 Ω (lower), but Q_g = 71 nC (higher); TO-220 package, no integrated diode optimization	Lacks STripFET™ II's low-C_iss/Q_g balance; unsuitable for >250 kHz without gate driver upgrade	Prefer when board space allows TO-220 and thermal mass compensates for higher switching loss
STP4NK100Z	Same V_DS (100 V), but Zener-protected superjunction architecture; R_DS(on) = 0.55 Ω (much higher), Q_g = 22 nC	Designed for high-voltage, low-frequency AC-DC PFC stages-not optimized for DC-DC primary switching	Select only for cost-sensitive, low-frequency (<100 kHz), high-voltage line-switching applications

Compared with IRF540N and STP4NK100Z, STS4NF100 delivers superior high-frequency efficiency due to its optimized Q_g/R_DS(on) ratio and SO-8 thermal interface, making it uniquely suited for compact, high-density telecom and server DC-DC designs.

Availability

STS4NF100 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial PLC power modules, and networking equipment SMPS requiring stable component supply and long-lifecycle support.

Supply support for STS4NF100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The STripFET™ Power MOSFET product line targets high-efficiency, high-frequency power conversion-specifically engineered for isolated DC-DC, VRM, and POL applications where low gate charge and avalanche ruggedness are critical.

FAQ

Is STS4NF100 suitable for 5 V gate drive?

Yes. With a gate threshold voltage range of 2–4 V and guaranteed turn-on at V_GS = 5 V, STS4NF100 operates reliably with standard 5 V logic-level drivers. Its 30–41 nC total gate charge ensures minimal driver stress and fast switching transitions without requiring high-current gate buffers.

What is the maximum safe operating frequency for STS4NF100?

STS4NF100 is characterized for stable operation up to 500 kHz in hard-switched topologies. Its 870 pF input capacitance and 30–41 nC gate charge support efficient switching at this frequency when paired with appropriate gate resistance (e.g., 4.7 Ω) and layout practices minimizing parasitic inductance.

Does STS4NF100 include an integrated body diode?

Yes. It features a monolithic source-drain body diode with forward voltage of 1.2 V at 4 A and reverse recovery time of 100 ns at 150°C junction temperature. This diode is fully characterized and qualified for freewheeling and synchronous rectification use in buck and flyback converters.

Can STS4NF100 replace older STripFET™ I devices in existing designs?

Yes-STS4NF100 is a direct drop-in replacement for STS4NF100's predecessor STripFET™ I variants (e.g., STS4NF10) with identical SO-8 footprint, pinout, and voltage/current ratings. It offers improved R_DS(on), lower Q_g, and enhanced avalanche ruggedness per the Rev 4 datasheet.

STS4NF100 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS4NF100 FAQ

1.How can I place an order for STS4NF100 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS4NF100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS4NF100 reliable?

The price and inventory of STS4NF100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS4NF100 is usually 5 days.

3.What payment methods are accepted for STS4NF100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS4NF100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS4NF100?

STS4NF100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS4NF100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS4NF100?

For technical support, including STS4NF100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS4NF100 requirements.

6.How does Aetrix verify that STS4NF100 is sourced from the original manufacturer or authorized distributors?

All STS4NF100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS4NF100 meets industry standards.

7.What is the process for return or replacement of STS4NF100?

All STS4NF100 units undergo pre-shipment inspection (PSI). If there is an issue with STS4NF100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS4NF100 part is unused and in its original packaging.

Return procedure for STS4NF100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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