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STMicroelectronics STS5DNF20V

Part No.:
STS5DNF20V
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTS5DNF20V.pdf
Description:
MOSFET 2N-CH 20V 5A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,111

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Product details

Overview

STS5DNF20V from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SO-8 package, rated for 20 V VDS, 5 A continuous drain current at TC = 25 °C, and 0.030 Ω typical RDS(on) at VGS = 4.5 V. It features ultra-low gate threshold (2.7 V typ), low gate charge (8.5 nC typ), and is optimized as a primary switch in high-efficiency isolated DC-DC converters for telecom and computing power supplies.

For engineers reviewing the STS5DNF20V datasheet, STS5DNF20V pinout, STS5DNF20V application, or STS5DNF20V equivalent, key selection criteria include its 2.7 V gate drive compatibility with low-voltage controllers, 0.040 Ω max RDS(on) at 4.5 V, SO-8 thermal performance (Rthj-a = 62.5 °C/W single operation), and suitability for synchronous rectification and load switching in compact 5–12 V input systems.

Technical Context

This STripFET™ II device uses a trench-gate process to minimize input capacitance (Ciss = 460 pF) and gate charge (Qg = 8.5 nC typ), enabling fast switching (tr = 33 ns, tf = 10 ns) with reduced driver losses. Its low VGS(th) (0.6 V min) ensures reliable turn-on with 3.3 V logic-level sources.

The integrated body diode exhibits low reverse recovery charge (Qrr = 13 nC) and fast trr (26 ns), supporting efficient synchronous rectification and reducing voltage spikes in inductive switching. Thermal design is supported by dual-source heat dissipation via exposed drain pads in SO-8 layout.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - Maximum blocking voltage for 5–12 V input DC-DC stages
RDS(on) @ 4.5 V0.030 Ω typ - Enables ≤150 mW conduction loss at 5 A, critical for >90% efficiency
VGS(th)0.6 V min - Ensures guaranteed turn-on with 2.7 V gate drive, compatible with low-VCC controllers
Qg8.5 nC typ - Reduces gate driver power and enables <100 ns total switching transitions
Ciss460 pF - Low input capacitance minimizes Miller effect and improves EMI behavior
tr/tf33 ns / 10 ns - Supports >1 MHz switching in isolated flyback and forward converters
TJ max150 °C - Allows operation in thermally constrained board areas without derating below 3 A

Pinout & Package

STS5DNF20V is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with ECOPACK® environmental standards and supports automated reflow assembly.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalAccepts 2.7 V logic-level drive; low Ciss reduces required gate current
S (Source)Reference nodeCommon return path for load current; tied to PCB ground plane for noise control
D (Drain)Power output nodeInternally connected to exposed pad; must be soldered to large copper area for thermal relief
D (Pins 5–8)Drain terminalsFour parallel drain pins reduce bond wire inductance and improve current sharing

Key Features

FeatureDesign Value
Ultra-low gate threshold2.7 V typ - Enables direct drive from 3.3 V microcontrollers and PWM ICs without level shifters
Low RDS(on) at low VGS0.045 Ω max @ 2.7 V - Maintains low conduction loss even under undervoltage conditions
Optimized gate charge8.5 nC typ - Reduces switching energy loss and simplifies gate driver selection
Fast body diode recoverytrr = 26 ns, Qrr = 13 nC - Minimizes shoot-through risk and voltage overshoot in synchronous rectifier topologies

Applications

Telecom DC-DC ConvertersServer VRMs

Use Scenario: Primary-side switch in 48 V-to-12 V isolated half-bridge converters powering base station RF modules.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with 2.7 V gate drive from UCD3138 controller.

Use Value: 0.030 Ω RDS(on) limits conduction loss to <120 mW at 4 A, improving system efficiency by ≥1.2% over comparable 0.055 Ω devices.

Use Scenario: Synchronous rectifier in multiphase 12 V input buck converters delivering up to 200 A to CPU/GPU rails.

IC Role / Device Role / Timing Role: Low-side switch driven by integrated gate driver with 3.3 V logic interface.

Use Value: Fast 10 ns fall time and low Qgd (2.4 nC) reduce dead-time losses and improve transient response under dynamic load steps.

Industrial PLC Power SuppliesPoint-of-Load Regulators

Use Scenario: Load switch controlling 5 V/3.3 V auxiliary rails in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch with enable control and overcurrent protection feedback.

Use Value: 5 A continuous rating at 100 °C case temperature allows full-rated operation without heatsink in convection-cooled enclosures.

Use Scenario: High-efficiency step-down regulator for FPGA I/O banks requiring tight voltage regulation and low ripple.

IC Role / Device Role / Timing Role: Main power switch in 1 MHz fixed-frequency buck converter with ceramic output capacitors.

Use Value: 460 pF Ciss and 50 pF Crss suppress EMI emissions above 30 MHz, easing EMC compliance testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFRDS(on) = 0.028 Ω @ 4.5 V, but VGS(th) = 1.0–2.0 V min - requires higher gate drive marginHigher VGS(th) limits use with 2.7 V drivers; better suited for 5 V logic systemsSelect when gate drive is ≥4.5 V and lower on-resistance is prioritized over ultra-low-threshold operation
DMN2020LSD-13RDS(on) = 0.035 Ω @ 4.5 V, VGS(th) = 0.5–1.2 V - wider threshold distribution affects consistency in parallel configurationsSO-8 package lacks exposed drain pad; thermal resistance ~75 °C/W - limits sustained 5 A operationSelect for cost-sensitive designs where peak efficiency is secondary to BOM simplicity and footprint compatibility

Compared with IRF7470PBF and DMN2020LSD-13, STS5DNF20V uniquely balances 2.7 V gate drive capability, 0.030 Ω RDS(on), and SO-8 thermal performance - making it optimal for space-constrained, low-voltage-controlled DC-DC stages where both efficiency and driver compatibility are critical.

Availability

STS5DNF20V is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial PLC power rails, and point-of-load regulators requiring stable component supply and long-term production continuity.

Supply support for STS5DNF20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STS5DNF20V belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in telecom and computing infrastructure where low gate charge and logic-level drive are essential.

FAQ

Is STS5DNF20V suitable for synchronous rectification?

Yes. Its fast body diode (trr = 26 ns, Qrr = 13 nC) and low RDS(on) (0.030 Ω typ) make it well-suited for low-side synchronous rectification in 12 V and 5 V output DC-DC converters. The SO-8 package's exposed drain pad also aids thermal management during continuous conduction mode operation.

What is the maximum continuous drain current at 85 °C case temperature?

Based on thermal derating curves in the datasheet, STS5DNF20V supports 3.8 A continuous drain current at TC = 85 °C. This is derived from linear interpolation between the 5 A rating at 25 °C and 3 A at 100 °C, consistent with its specified thermal resistance and SO-8 package limitations.

Does STS5DNF20V require a gate resistor for safe switching?

A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off, especially in high-frequency (>300 kHz) applications. The device's low Qg (8.5 nC) and Crss (50 pF) make it sensitive to parasitic oscillation without proper gate network design.

Can STS5DNF20V replace older STS5DNF30L in existing designs?

No - STS5DNF30L has 30 V VDS and different RDS(on) and gate charge specs. STS5DNF20V is not a drop-in replacement due to lower voltage rating (20 V vs. 30 V) and distinct SO-8 pinout thermal layout. System-level validation of voltage stress and thermal margin is required before substitution.

STS5DNF20V Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5A
Rds On (Max) @ Id, Vgs:
40mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:
600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
460pF @ 25V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

STS5DNF20V FAQ

1.How can I place an order for STS5DNF20V through Aetrix?

Please submit a Request for Quotation (RFQ) for STS5DNF20V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS5DNF20V reliable?

The price and inventory of STS5DNF20V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS5DNF20V is usually 5 days.

3.What payment methods are accepted for STS5DNF20V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS5DNF20V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS5DNF20V?

STS5DNF20V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS5DNF20V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS5DNF20V?

For technical support, including STS5DNF20V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS5DNF20V requirements.

6.How does Aetrix verify that STS5DNF20V is sourced from the original manufacturer or authorized distributors?

All STS5DNF20V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS5DNF20V meets industry standards.

7.What is the process for return or replacement of STS5DNF20V?

All STS5DNF20V units undergo pre-shipment inspection (PSI). If there is an issue with STS5DNF20V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS5DNF20V part is unused and in its original packaging.

Return procedure for STS5DNF20V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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