STMicroelectronics STS5DNF20V
- Part No.:
- STS5DNF20V
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS5DNF20V.pdf
- Description:
- MOSFET 2N-CH 20V 5A 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:5,111
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Product details
Overview
STS5DNF20V from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SO-8 package, rated for 20 V VDS, 5 A continuous drain current at TC = 25 °C, and 0.030 Ω typical RDS(on) at VGS = 4.5 V. It features ultra-low gate threshold (2.7 V typ), low gate charge (8.5 nC typ), and is optimized as a primary switch in high-efficiency isolated DC-DC converters for telecom and computing power supplies.
For engineers reviewing the STS5DNF20V datasheet, STS5DNF20V pinout, STS5DNF20V application, or STS5DNF20V equivalent, key selection criteria include its 2.7 V gate drive compatibility with low-voltage controllers, 0.040 Ω max RDS(on) at 4.5 V, SO-8 thermal performance (Rthj-a = 62.5 °C/W single operation), and suitability for synchronous rectification and load switching in compact 5–12 V input systems.
Technical Context
This STripFET™ II device uses a trench-gate process to minimize input capacitance (Ciss = 460 pF) and gate charge (Qg = 8.5 nC typ), enabling fast switching (tr = 33 ns, tf = 10 ns) with reduced driver losses. Its low VGS(th) (0.6 V min) ensures reliable turn-on with 3.3 V logic-level sources.
The integrated body diode exhibits low reverse recovery charge (Qrr = 13 nC) and fast trr (26 ns), supporting efficient synchronous rectification and reducing voltage spikes in inductive switching. Thermal design is supported by dual-source heat dissipation via exposed drain pads in SO-8 layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 5–12 V input DC-DC stages |
| RDS(on) @ 4.5 V | 0.030 Ω typ - Enables ≤150 mW conduction loss at 5 A, critical for >90% efficiency |
| VGS(th) | 0.6 V min - Ensures guaranteed turn-on with 2.7 V gate drive, compatible with low-VCC controllers |
| Qg | 8.5 nC typ - Reduces gate driver power and enables <100 ns total switching transitions |
| Ciss | 460 pF - Low input capacitance minimizes Miller effect and improves EMI behavior |
| tr/tf | 33 ns / 10 ns - Supports >1 MHz switching in isolated flyback and forward converters |
| TJ max | 150 °C - Allows operation in thermally constrained board areas without derating below 3 A |
Pinout & Package
STS5DNF20V is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with ECOPACK® environmental standards and supports automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 2.7 V logic-level drive; low Ciss reduces required gate current |
| S (Source) | Reference node | Common return path for load current; tied to PCB ground plane for noise control |
| D (Drain) | Power output node | Internally connected to exposed pad; must be soldered to large copper area for thermal relief |
| D (Pins 5–8) | Drain terminals | Four parallel drain pins reduce bond wire inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | 2.7 V typ - Enables direct drive from 3.3 V microcontrollers and PWM ICs without level shifters |
| Low RDS(on) at low VGS | 0.045 Ω max @ 2.7 V - Maintains low conduction loss even under undervoltage conditions |
| Optimized gate charge | 8.5 nC typ - Reduces switching energy loss and simplifies gate driver selection |
| Fast body diode recovery | trr = 26 ns, Qrr = 13 nC - Minimizes shoot-through risk and voltage overshoot in synchronous rectifier topologies |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 48 V-to-12 V isolated half-bridge converters powering base station RF modules. IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with 2.7 V gate drive from UCD3138 controller. Use Value: 0.030 Ω RDS(on) limits conduction loss to <120 mW at 4 A, improving system efficiency by ≥1.2% over comparable 0.055 Ω devices. | Use Scenario: Synchronous rectifier in multiphase 12 V input buck converters delivering up to 200 A to CPU/GPU rails. IC Role / Device Role / Timing Role: Low-side switch driven by integrated gate driver with 3.3 V logic interface. Use Value: Fast 10 ns fall time and low Qgd (2.4 nC) reduce dead-time losses and improve transient response under dynamic load steps. |
| Industrial PLC Power Supplies | Point-of-Load Regulators |
Use Scenario: Load switch controlling 5 V/3.3 V auxiliary rails in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch with enable control and overcurrent protection feedback. Use Value: 5 A continuous rating at 100 °C case temperature allows full-rated operation without heatsink in convection-cooled enclosures. | Use Scenario: High-efficiency step-down regulator for FPGA I/O banks requiring tight voltage regulation and low ripple. IC Role / Device Role / Timing Role: Main power switch in 1 MHz fixed-frequency buck converter with ceramic output capacitors. Use Value: 460 pF Ciss and 50 pF Crss suppress EMI emissions above 30 MHz, easing EMC compliance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.028 Ω @ 4.5 V, but VGS(th) = 1.0–2.0 V min - requires higher gate drive margin | Higher VGS(th) limits use with 2.7 V drivers; better suited for 5 V logic systems | Select when gate drive is ≥4.5 V and lower on-resistance is prioritized over ultra-low-threshold operation |
| DMN2020LSD-13 | RDS(on) = 0.035 Ω @ 4.5 V, VGS(th) = 0.5–1.2 V - wider threshold distribution affects consistency in parallel configurations | SO-8 package lacks exposed drain pad; thermal resistance ~75 °C/W - limits sustained 5 A operation | Select for cost-sensitive designs where peak efficiency is secondary to BOM simplicity and footprint compatibility |
Compared with IRF7470PBF and DMN2020LSD-13, STS5DNF20V uniquely balances 2.7 V gate drive capability, 0.030 Ω RDS(on), and SO-8 thermal performance - making it optimal for space-constrained, low-voltage-controlled DC-DC stages where both efficiency and driver compatibility are critical.
Availability
STS5DNF20V is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial PLC power rails, and point-of-load regulators requiring stable component supply and long-term production continuity.
Supply support for STS5DNF20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
STS5DNF20V belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in telecom and computing infrastructure where low gate charge and logic-level drive are essential.
FAQ
Is STS5DNF20V suitable for synchronous rectification?
Yes. Its fast body diode (trr = 26 ns, Qrr = 13 nC) and low RDS(on) (0.030 Ω typ) make it well-suited for low-side synchronous rectification in 12 V and 5 V output DC-DC converters. The SO-8 package's exposed drain pad also aids thermal management during continuous conduction mode operation.
What is the maximum continuous drain current at 85 °C case temperature?
Based on thermal derating curves in the datasheet, STS5DNF20V supports 3.8 A continuous drain current at TC = 85 °C. This is derived from linear interpolation between the 5 A rating at 25 °C and 3 A at 100 °C, consistent with its specified thermal resistance and SO-8 package limitations.
Does STS5DNF20V require a gate resistor for safe switching?
A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off, especially in high-frequency (>300 kHz) applications. The device's low Qg (8.5 nC) and Crss (50 pF) make it sensitive to parasitic oscillation without proper gate network design.
Can STS5DNF20V replace older STS5DNF30L in existing designs?
No - STS5DNF30L has 30 V VDS and different RDS(on) and gate charge specs. STS5DNF20V is not a drop-in replacement due to lower voltage rating (20 V vs. 30 V) and distinct SO-8 pinout thermal layout. System-level validation of voltage stress and thermal margin is required before substitution.
STS5DNF20V Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5A
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 460pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS5DNF20V FAQ
1.How can I place an order for STS5DNF20V through Aetrix?
Please submit a Request for Quotation (RFQ) for STS5DNF20V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS5DNF20V reliable?
The price and inventory of STS5DNF20V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS5DNF20V is usually 5 days.
3.What payment methods are accepted for STS5DNF20V?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS5DNF20V transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS5DNF20V?
STS5DNF20V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS5DNF20V order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS5DNF20V?
For technical support, including STS5DNF20V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS5DNF20V requirements.
6.How does Aetrix verify that STS5DNF20V is sourced from the original manufacturer or authorized distributors?
All STS5DNF20V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS5DNF20V meets industry standards.
7.What is the process for return or replacement of STS5DNF20V?
All STS5DNF20V units undergo pre-shipment inspection (PSI). If there is an issue with STS5DNF20V, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS5DNF20V part is unused and in its original packaging.
Return procedure for STS5DNF20V:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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