STMicroelectronics STS5DNF60L

Overview

STS5DNF60L from STMicroelectronics is an AEC-Q101-qualified dual N-channel 60 V, 45 mΩ (max) Power MOSFET in SO-8 package, featuring 5 A continuous drain current at 25 °C, 100% avalanche tested construction, and low 15 nC total gate charge. It serves as a primary synchronous rectifier or half-bridge switch in isolated DC-DC converters for telecom and computing power supplies.

For engineers reviewing the STS5DNF60L datasheet, STS5DNF60L pinout, STS5DNF60L application, or STS5DNF60L equivalent, key selection criteria include its dual-channel SO-8 layout, 62.5 °C/W junction-to-board thermal resistance, 85 ns reverse recovery time, and automotive-grade reliability for high-reliability 48 V input power stages.

Technical Context

This device integrates two independent N-channel STripFET II transistors in a single SO-8 package, sharing no internal connection between channels - each channel has dedicated source, drain, and gate terminals. Its design targets high-efficiency switching where low R_DS(on), minimal C_iss (1030 pF), and robust dv/dt immunity (>50 V/ns) are critical.

The dual configuration enables space-constrained half-bridge topologies without discrete pairing, while its 1.0–2.5 V gate threshold and ±15 V V_GS rating support standard 3.3 V/5 V logic-level drive and 12 V gate bias schemes. The 100% unclamped inductive switching (UIS) test ensures ruggedness in flyback and LLC resonant converter applications.

Key Specifications

Pinout & Package

STS5DNF60L uses a standard SO-8 surface-mount package (JEDEC MS-012AC) with exposed thermal pad on underside. Pin numbering follows standard SO-8 convention (pin 1 at top-left corner, counterclockwise).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel 60 V Power MOSFET applications.

Compared with IPP040N06N and NTMFS5C675NL, STS5DNF60L uniquely balances automotive qualification, dual-channel integration, and thermally optimized SO-8 packaging - making it optimal for space-constrained, high-reliability 48 V power conversion where board area and qualification compliance are non-negotiable.

Availability

STS5DNF60L is available at Aetrix Electronics and suitable for telecom power supplies, automotive body control modules, and industrial PLC output stages requiring stable component supply and long-term lifecycle assurance.

Supply support for STS5DNF60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STS5DNF60L belongs to ST's STripFET II automotive-qualified Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in harsh-environment applications.

FAQ

What is the maximum safe operating area (SOA) for STS5DNF60L at 100 °C case temperature?

At T_case = 100 °C, the SOA is limited to 2.2 A continuous at V_DS = 30 V for DC operation, or 5 A for 100 µs pulses at V_DS = 40 V. These boundaries derive directly from Figure 1 in DS5750 Rev 4 and assume FR-4 board with 2 oz copper and 1 inch² copper pour under the exposed pad.

Can STS5DNF60L be used in a synchronous rectifier configuration on the secondary side of an LLC resonant converter?

Yes - its 1.2 V body diode forward voltage and 85 ns reverse recovery time support synchronous rectification at 300–600 kHz. However, external gate drive timing must account for 45 ns turn-off delay to avoid cross-conduction; a dedicated SR controller like STSR3 is recommended for precise dead-time control.

Does the SO-8 package include an exposed thermal pad, and is it electrically connected?

Yes - the SO-8 package features an exposed thermal pad on the underside (pin 0), which is electrically connected to the drain terminals (pins 5, 6, 7, 8). ST recommends soldering this pad to a large copper plane using ≥6 thermal vias for optimal R_thJB performance per Table 2.

How does the AEC-Q101 qualification impact PCB layout and thermal design for STS5DNF60L?

AEC-Q101 validation requires sustained operation across −40 to 125 °C junction temperature. Layout must ensure ≤62.5 °C/W thermal resistance from junction to board, achieved via full-pad soldering, ≥6 thermal vias to inner ground planes, and avoidance of nearby heat sources exceeding 85 °C ambient in sealed enclosures.