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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics STS5DPF20L

Name: STS5DPF20L
Brand: STMicroelectronics
SKU: STS5DPF20L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS5DPF20L

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS5DPF20L.pdf

Description:: MOSFET 2P-CH 20V 5A 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:6,796

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Product details

Overview

STS5DPF20L from STMicroelectronics is a P-channel enhancement-mode MOSFET designed for high-efficiency power switching in low-voltage DC/DC converters and battery management systems. It features 20 V V_DSS, 0.045 Ω R_DS(on) @ V_GS = 10 V, 5 A continuous drain current at T_C = 25°C, ±16 V gate-source voltage rating, and SO-8 package with ST's StripFET™ II process.

For engineers reviewing the STS5DPF20L datasheet, STS5DPF20L pinout, STS5DPF20L application, or STS5DPF20L equivalent, key selection criteria include its low-threshold drive capability (V_GS(th) = 1–2.5 V), rugged avalanche performance, source-drain diode recovery characteristics (t_rr = 45 ns), and thermal resistance (R_thj-case = 62.5 °C/W single operating).

Technical Context

This P-channel MOSFET operates with reversed polarity versus N-channel devices: gate drive is referenced to source, and conduction occurs when V_GS is negative relative to threshold. Its low R_DS(on) and optimized gate charge (Q_g = 12.5 nC typ.) enable fast switching with reduced conduction and switching losses in synchronous buck topologies and load-switching applications.

The integrated body diode supports bidirectional current flow in battery protection circuits and exhibits controlled reverse recovery (Q_rr = 36 nC, I_RRM = 1.6 A) under inductive switching conditions. Thermal design is supported by dual-configuration power dissipation ratings (1.6 W single / 2 W dual operating) and validated safe operating area up to 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage; defines upper limit for battery-input or rail-swing applications.
R_DS(on)	0.045 Ω @ V_GS = −10 V - Enables <113 mW conduction loss at 5 A, critical for portable device thermal budget.
I_D (continuous)	5 A @ T_C = 25°C - Supports compact DC motor drives and high-current load switches without external heatsinking.
V_GS(th)	1–2.5 V - Allows direct interface with 3.3 V logic or low-voltage microcontroller GPIOs without level-shifting.
Q_g	12.5 nC typ. @ V_GS = −5 V - Reduces gate-drive power and enables >1 MHz switching in high-frequency SMPS designs.
t_rr	45 ns - Limits diode recovery energy loss during hard-switched transitions in half-bridge configurations.
R_thj-case	62.5 °C/W - Determines junction-to-case temperature rise per watt; used to calculate max ambient in sealed enclosures.

Pinout & Package

STS5DPF20L is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal performance. Pin numbering follows conventional SO-8 layout (pin 1 = gate, pins 2–4 = source, pins 5–8 = drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts negative V_GS to turn on; requires stable −10 V drive for full R_DS(on) performance.
Pins 2, 3, 4	Source	Common return path for load current; tied to system ground or high-side reference in high-side switch configurations.
Pins 5, 6, 7, 8	Drain	Main power output node; electrically connected to exposed thermal pad; must be routed with adequate copper area for heat dissipation.

Key Features

Feature	Design Value
StripFET™ II process	Enables 0.045 Ω R_DS(on) in SO-8 without die size increase-improves power density over prior-generation P-channel MOSFETs.
Rugged avalanche rating	Guaranteed unclamped inductive switching capability per Figure 14-supports reliable operation in motor drive fault conditions.
Low gate threshold	V_GS(th) down to 1 V allows use with 1.8–3.3 V control rails, reducing need for dedicated gate drivers in space-constrained designs.
Optimized body diode	45 ns t_rr and 36 nC Q_rr minimize shoot-through risk and EMI in synchronous rectification and H-bridge topologies.

Applications

Battery Protection Circuit

DC/DC Synchronous Buck Converter

Use Scenario: Reverse-polarity and overcurrent protection in USB-powered portable devices with Li-ion batteries.

IC Role / Device Role: High-side load switch controlling battery connection to system rail; configured as ideal diode with active gate control.

Use Value: 0.045 Ω R_DS(on) limits voltage drop to <225 mV at 5 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Low-voltage, high-efficiency step-down conversion from 5 V or 3.3 V input to core logic supply in smartphones.

IC Role / Device Role: Synchronous rectifier in buck converter output stage, replacing Schottky diode to reduce conduction loss.

Use Value: 5 A continuous rating and 12.5 nC Q_g support >500 kHz switching with <1% duty-cycle loss, improving light-load efficiency.

Cellular Phone Power Management

DC Motor Drive (H-Bridge Half)

Use Scenario: Dual-rail power sequencing and dynamic load switching between RF and baseband subsystems.

IC Role / Device Role: Independent power rail switch enabling selective subsystem shutdown to meet 3GPP idle-mode current targets.

Use Value: Low V_GS(th) ensures full turn-on with 2.8 V PMIC outputs, while SO-8 footprint simplifies layout in tight PCB real estate.

Use Scenario: Bidirectional 5 V motor control in handheld medical instruments and robotics peripherals.

IC Role / Device Role: One leg of an H-bridge configuration, where source connects to V_CC and drain drives motor winding.

Use Value: Integrated body diode with 45 ns t_rr handles freewheeling current without external catch diodes, reducing BOM count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 0.035 Ω @ −10 V, but V_DSS = 30 V and Q_g = 22 nC - higher voltage margin but slower switching.	Preferred in 24 V industrial systems; less optimal for 3.3 V gate drive due to higher V_GS(th) (1.5–2.5 V).	Select when higher V_DSS headroom is required and gate drive strength permits higher Q_g.
IRF7420TRPBF	R_DS(on) = 0.052 Ω @ −10 V, SO-8, but t_rr = 90 ns - longer diode recovery increases switching loss in high-frequency buck.	Suitable for lower-frequency (<300 kHz) motor drives; not recommended for synchronous rectification above 1 MHz.	Choose for cost-sensitive designs where diode recovery is non-critical and thermal margin exceeds 10°C.

Compared with Si7851DP-T1-GE3 and IRF7420TRPBF, STS5DPF20L offers the lowest gate charge among 20 V P-channel SO-8 MOSFETs, enabling faster switching with minimal driver overhead-critical for ultra-compact battery-powered systems requiring sub-millisecond response.

Availability

STS5DPF20L is available at Aetrix Electronics and suitable for DC/DC converters, battery management in nomadic equipment, and power management in cellular phones requiring stable component supply despite its obsolete status-inventory is maintained for legacy design continuity and repair programs.

Supply support for STS5DPF20L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for automotive, industrial, and consumer markets.

STS5DPF20L belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-density, low-voltage switching in portable and battery-operated applications where thermal efficiency and gate-drive simplicity are paramount.

FAQ

Is STS5DPF20L still in active production?

No-STS5DPF20L is marked "Obsolete Product(s)" in the official STMicroelectronics datasheet (Rev. 2, September 2004). However, Aetrix Electronics maintains verified legacy stock with full traceability and provides extended lifecycle support including counterfeit mitigation and batch-level documentation for ongoing production and repair needs.

Can STS5DPF20L be used as a direct replacement for N-channel MOSFETs?

No-it is a P-channel device with inverted polarity: it conducts when V_GS is negative, unlike N-channel MOSFETs that require positive V_GS. Direct substitution would require circuit redesign, including gate-drive polarity reversal and source/drain reconnection. It is not a drop-in replacement for N-channel parts like STP55NF06L.

What is the maximum safe operating frequency for STS5DPF20L in a buck converter?

Based on its 12.5 nC total gate charge and 35 ns rise/fall times, STS5DPF20L supports reliable operation up to 1.5 MHz in well-designed layouts with low-inductance gate loops and appropriate gate resistor selection (e.g., R_G = 4.7 Ω). Above this, switching losses increase significantly due to Q_gd-dominated Miller plateau effects.

Does STS5DPF20L require a heatsink in 5 A continuous operation?

At 5 A and R_DS(on) = 0.045 Ω, conduction loss is 1.125 W. With R_thj-case = 62.5 °C/W and typical PCB copper (2 oz, 1 in²), junction temperature rise is ~70°C above ambient. A heatsink is not required if ambient stays below 80°C and PCB thermal relief is adequate-but derating to 4 A is recommended for sealed enclosures above 60°C ambient.

STS5DPF20L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 5A

Rds On (Max) @ Id, Vgs:: 55mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:: 1350pF @ 16V

Power - Max:: 1.6W

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS5DPF20L FAQ

1.How can I place an order for STS5DPF20L through Aetrix?

Please submit a Request for Quotation (RFQ) for STS5DPF20L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS5DPF20L reliable?

The price and inventory of STS5DPF20L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS5DPF20L is usually 5 days.

3.What payment methods are accepted for STS5DPF20L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS5DPF20L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS5DPF20L?

STS5DPF20L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS5DPF20L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS5DPF20L?

For technical support, including STS5DPF20L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS5DPF20L requirements.

6.How does Aetrix verify that STS5DPF20L is sourced from the original manufacturer or authorized distributors?

All STS5DPF20L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS5DPF20L meets industry standards.

7.What is the process for return or replacement of STS5DPF20L?

All STS5DPF20L units undergo pre-shipment inspection (PSI). If there is an issue with STS5DPF20L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS5DPF20L part is unused and in its original packaging.

Return procedure for STS5DPF20L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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