STMicroelectronics STS5N15F4

Overview

STS5N15F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SO-8 package, rated for 150 V drain-source voltage, 5 A continuous drain current at 25 °C, and 0.057 Ω typical R_DS(on) at V_GS = 10 V. It features low gate charge (48 nC), 100% avalanche-rated operation, and is optimized for high-efficiency switching in DC-DC converters and motor control stages.

For engineers reviewing the STS5N15F4 datasheet, STS5N15F4 pinout, STS5N15F4 application, or STS5N15F4 equivalent, key selection criteria include its 150 V breakdown rating, sub-63 mΩ on-resistance at 2.5 A, SO-8 thermal performance (R_thj-pcb = 50 °C/W on FR-4), and verified unclamped inductive switching capability (E_AS = 125 mJ).

Technical Context

This MOSFET employs ST's STripFET™ DeepGATE™ technology, integrating a refined gate structure to minimize both R_DS(on) and gate charge simultaneously. Its internal layout supports fast switching with t_d(on) = 13.5 ns and t_f = 11.4 ns under 4.7 Ω gate resistance, while maintaining robust safe operating area up to 100 ms at T_C = 25 °C.

The device includes an integrated body diode with reverse recovery time (t_rr) of 85.2 ns and Q_rr = 277.6 nC at 150 °C, enabling reliable synchronous rectification and flyback snubberless operation in medium-voltage SMPS topologies.

Key Specifications

Pinout & Package

STS5N15F4 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pad for enhanced thermal dissipation. Pin 1–4 are source terminals (internally paralleled), Pin 5–8 form the drain (including thermal pad connection), and Gate is on Pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and DMN3029LSD-13, STS5N15F4 uniquely balances 150 V rating, 48 nC gate charge, and 0.057 Ω on-resistance-making it optimal for medium-voltage, medium-frequency switching where both voltage margin and driver simplicity matter.

Availability

STS5N15F4 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and Power over Ethernet (PoE) PSE applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STS5N15F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STS5N15F4 belongs to ST's STripFET™ DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 100–200 V industrial power supplies and motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STS5N15F4 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 16083 Rev 2). This derating reflects thermal limitations of the SO-8 package under sustained high-temperature operation and must be accounted for in heatsink-less designs.

Does STS5N15F4 have an integrated ESD protection diode on the gate?

No, STS5N15F4 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V absolute maximum V_GS, and the device requires external gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp) in environments with handling or system-level ESD risk.

Can STS5N15F4 be used in linear (analog) regulation mode?

STS5N15F4 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve (Figure 2) shows limited DC capability beyond 1 A at V_DS > 30 V, and prolonged linear use risks thermal runaway due to positive R_DS(on) temperature coefficient above 100 °C.

What is the recommended PCB layout for thermal performance?

For optimal thermal performance, the exposed drain pad (Pins 5–8 + underside thermal pad) must be soldered to a minimum 1 in² copper pour with ≥2 oz Cu thickness and ≥4 thermal vias (0.3 mm diameter) connecting to inner/ground planes. Source pins (1,2,4) should connect directly to a low-impedance ground plane to minimize switching loop inductance.