STMicroelectronics STS8DN3LLH5

Overview

STS8DN3LLH5 from STMicroelectronics is a dual N-channel 30 V Power MOSFET in SO-8 package, optimized for high-efficiency switching with R_DS(on) = 0.0155 Ω @ V_GS = 10 V, 5 A, Q_g = 5.4 nC, and 10 A continuous drain current at T_C = 25 °C. It delivers low gate drive power loss and high avalanche ruggedness in DC-DC converters and motor control half-bridges.

For engineers reviewing the STS8DN3LLH5 datasheet, STS8DN3LLH5 pinout, STS8DN3LLH5 application, or STS8DN3LLH5 equivalent, key selection criteria include its 30 V V_DS, sub-20 mΩ on-resistance at 4.5 V gate drive, 40 A pulsed current capability, and SO-8 thermal performance (R_thj-pcb = 47 °C/W on FR-4).

Technical Context

This dual N-channel MOSFET integrates two identical STripFET™ V cells in a single SO-8 package, enabling synchronous rectification or half-bridge topologies without external pairing. Its low R_DS(on) × Q_g figure-of-merit (FOM) targets high-frequency switching up to several hundred kHz while minimizing conduction and switching losses.

The device features enhanced avalanche energy rating and a source-drain diode with t_rr = 20.8 ns and Q_rr = 10.5 nC at T_j = 150 °C, supporting fast, low-loss commutation in inductive loads. Gate threshold voltage is tightly specified at 1 V (min), ensuring reliable turn-on with 3.3 V or 5 V logic-level drivers.

Key Specifications

Pinout & Package

STS8DN3LLH5 uses the industry-standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to Channel 1 and pins 5–8 to Channel 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with BSC014N04LS6 and Si7850DP, STS8DN3LLH5 offers optimal balance of low R_DS(on), moderate Q_g, and monolithic dual-channel integration - delivering space savings and timing alignment advantages in half-bridge and synchronous rectifier designs.

Availability

STS8DN3LLH5 is available at Aetrix Electronics and suitable for motor control half-bridges, DC-DC synchronous buck converters, and industrial PLC digital output modules requiring stable component supply and long-term manufacturability.

Supply support for STS8DN3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for smart driving, power management, and embedded processing.

STS8DN3LLH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum safe operating temperature for STS8DN3LLH5?

The STS8DN3LLH5 has a specified operating junction temperature range of –55 °C to +150 °C. Its thermal resistance junction-to-PCB is 47 °C/W on a 1-inch² FR-4 board with 2 oz copper. At 10 A continuous current and 0.0155 Ω R_DS(on), junction temperature rise is ~72 °C above ambient - requiring careful thermal design to stay within the 150 °C limit.

Can STS8DN3LLH5 be used with 3.3 V microcontroller GPIOs?

Yes - the gate threshold voltage V_GS(th) is specified from 1 V (min) to 2.5 V (max), and R_DS(on) is characterized down to 4.5 V gate drive (0.020 Ω max). With sufficient gate drive strength, it achieves usable on-resistance at 3.3 V, though conduction loss increases ~25% versus 4.5 V drive.

Does STS8DN3LLH5 support paralleling for higher current?

No - STS8DN3LLH5 is a monolithic dual-channel device with shared drain connections; it is not intended for paralleling with other units. Its internal structure does not guarantee matched thermal or electrical characteristics across multiple packages, and SO-8 thermal limits constrain aggregate current beyond 10 A per channel.

Is the body diode suitable for synchronous rectification?

Yes - the source-drain diode has t_rr = 20.8 ns and Q_rr = 10.5 nC at 150 °C, enabling use in synchronous rectifier topologies up to ~500 kHz. However, its forward voltage V_SD = 1.1 V at 10 A is higher than Schottky alternatives, so efficiency gain depends on switching frequency and duty cycle.