STMicroelectronics STS8DN6LF6AG

Overview

STS8DN6LF6AG from STMicroelectronics is an AEC-Q101 qualified dual N-channel 60 V Power MOSFET in SO-8 package, featuring 24 mΩ max R_DS(on) at V_GS = 10 V, 8 A continuous drain current, 3.2 W power dissipation, and low gate charge (27 nC). It serves as a high-efficiency synchronous rectifier or load switch in automotive DC-DC converters and motor control half-bridges.

For engineers reviewing the STS8DN6LF6AG datasheet, STS8DN6LF6AG pinout, STS8DN6LF6AG application, or STS8DN6LF6AG equivalent, this page delivers verified electrical ratings, SO-8 terminal mapping, avalanche ruggedness data (72 mJ E_AS), thermal resistance (47 °C/W), and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This device integrates two independent N-channel STripFET F6 trench-gate MOSFETs in a single SO-8 package, sharing no internal connection between channels. Each channel supports 60 V V_DS, ±20 V V_GS, and operates up to 175 °C junction temperature with unclamped inductive switching capability.

Its low 21 mΩ typical R_DS(on) at 10 V and 22–26 mΩ at 4.5 V enables efficient operation with standard logic-level microcontrollers. Dynamic parameters include 1340 pF C_iss, 60 pF C_rss, and fast switching (9.6 ns t_d(on), 7 ns t_f) suitable for high-frequency PWM control.

Key Specifications

Pinout & Package

SO-8 package: surface-mount, 8-pin, dual-channel layout with exposed thermal pad (not electrically connected). Pin 1 and Pin 3 are source terminals for Channel 1 and Channel 2 respectively; Pin 2 and Pin 4 are gate terminals; Pins 5–6 and 7–8 are drain terminals for each channel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with BSC020N06NS and NTMFS5C675NL, STS8DN6LF6AG uniquely balances AEC-Q101 compliance, SO-8 dual-channel integration, 4.5 V logic compatibility, and 72 mJ avalanche energy-making it optimal for cost-sensitive, thermally constrained automotive power stages.

Availability

STS8DN6LF6AG is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor drivers, and industrial 24 V load switches requiring stable component supply, AEC-Q101 assurance, and SO-8 manufacturability.

Supply support for STS8DN6LF6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

This device belongs to ST's STripFET F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor control applications demanding low R_DS(on), fast switching, and robust avalanche performance.

FAQ

Is STS8DN6LF6AG suitable for hot-swap applications?

Yes. Its 60 V V_DS, 8 A continuous rating, and 32 A pulsed current capability support controlled inrush limiting in 24 V hot-swap circuits. The low 24 mΩ R_DS(on) minimizes voltage drop during insertion, while the SO-8 thermal resistance (47 °C/W) enables stable operation with minimal heatsinking on standard PCBs.

What is the maximum safe operating frequency for STS8DN6LF6AG in PWM mode?

Based on measured 9.6 ns t_d(on), 20 ns t_r, 56 ns t_d(off), and 7 ns t_f, the device supports clean switching up to 500 kHz with appropriate gate drive strength (≤100 Ω series resistance) and layout optimization. At 1 MHz, overlap losses increase significantly due to finite transition times.

Does STS8DN6LF6AG integrate body diodes, and what are their characteristics?

Yes-each channel includes an intrinsic source-drain diode. At 8 A and 25 °C, forward voltage is 1.3 V; reverse recovery time is 22.5 ns with 22.2 nC Q_rr. These diodes support synchronous rectification and freewheeling in inductive loads but are not optimized for high-frequency ZVS operation.

Can STS8DN6LF6AG replace discrete MOSFET pairs in existing SO-8 footprints?

Yes-its pinout (S1-G1-S2-G2-D2-D2-D1-D1) matches standard dual-N SO-8 layouts. Pin 1 = S1, Pin 2 = G1, Pin 3 = S2, Pin 4 = G2, Pins 5–6 = D2, Pins 7–8 = D1. No PCB redesign is needed when upgrading from legacy STripFET IV or V duals with identical marking and thermal pad configuration.