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STMicroelectronics STS8DNH3LL

Part No.:
STS8DNH3LL
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTS8DNH3LL.pdf
Description:
MOSFET 2N-CH 30V 8A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,795

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Product details

Overview

STS8DNH3LL from STMicroelectronics is a dual n-channel 30 V, 8 A Power MOSFET in SO-8 package with RDS(on) = 0.018 Ω @ VGS = 10 V and total gate charge Qg = 7–10 nC @ VGS = 4.5 V, optimized for high-efficiency DC-DC converters where low conduction and switching losses are critical.

For engineers reviewing the STS8DNH3LL datasheet, STS8DNH3LL pinout, STS8DNH3LL application, or STS8DNH3LL equivalent, key selection criteria include its dual-channel SO-8 layout, 30 V VDS rating, 0.022 Ω max RDS(on) at 4.5 V drive, 100 mJ single-pulse avalanche energy, and suitability for synchronous buck topologies requiring fast switching and low gate charge.

Technical Context

This device implements ST's STripFET™ III process to achieve an optimal RDS(on) × Qg trade-off at 4.5 V gate drive-enabling efficient operation in 3.3 V/5 V logic-level control systems. Its dual n-channel configuration supports half-bridge or synchronous rectifier roles without external level-shifting.

The MOSFET features low output capacitance (Coss = 147 pF) and reverse transfer capacitance (Crss = 20 pF), minimizing Miller-induced turn-off delay and improving hard-switching robustness. Avalanche-rated (EAS = 100 mJ), it sustains unclamped inductive energy during transient fault conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin
RDS(on) max0.022 Ω @ VGS = 10 V - Enables ≤176 mW conduction loss at 8 A continuous current
Qg7–10 nC @ VGS = 4.5 V - Reduces gate driver power demand and switching transition time
ID (TC = 25°C)8 A - Continuous drain current rating under ideal heatsinking conditions
EAS100 mJ - Single-pulse avalanche energy tolerance supports reliable operation in inductive load switching
Ciss/Coss/Crss857 / 147 / 20 pF - Low capacitance values minimize switching losses and improve dv/dt immunity
td(off)/tf23 / 8 ns @ VDD = 15 V, RG = 4.7 Ω - Fast turn-off enables high-frequency (>1 MHz) converter designs

Pinout & Package

STS8DNH3LL is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads on both channels for thermal enhancement. The package complies with ECOPACK® environmental requirements and uses lead-free second-level interconnects.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (Channel 1)Common source connection for first n-channel MOSFET; tied internally to exposed drain pad 1
5, 6, 7, 8Source (Channel 2)Common source connection for second n-channel MOSFET; tied internally to exposed drain pad 2
Drain Pad ADrain (Channel 1)Thermally enhanced drain terminal for Channel 1; electrically isolated from Channel 2
Drain Pad BDrain (Channel 2)Thermally enhanced drain terminal for Channel 2; electrically isolated from Channel 1
G1 (Pin 1)Gate (Channel 1)Logic-level compatible gate input; threshold VGS(th) = 1 V ensures turn-on with 3.3 V microcontrollers
G2 (Pin 5)Gate (Channel 2)Independent gate input enabling asynchronous or complementary control of second channel

Key Features

FeatureDesign Value
STripFET™ III process integrationDelivers industry-leading RDS(on) × Qg figure-of-merit at 4.5 V gate drive for logic-level efficiency
Dual independent n-channel topologyEnables compact half-bridge or dual-phase synchronous rectifier implementation without external isolation
Avalanche-rated structureGuarantees 100 mJ single-pulse energy handling without failure-critical for unclamped inductive switching
Low Crss (20 pF)Reduces Miller plateau duration and improves immunity to false turn-on during high dv/dt transients
ECOPACK® complianceMeets RoHS and JEDEC JESD97 standards with lead-free solderability and traceable environmental certification

Applications

Server VRM Power StageIndustrial DC-DC Converter

Use Scenario: High-current, multi-phase buck regulator supplying CPU core voltage in 1U server platforms.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete high-side/low-side pairs in each phase leg.

Use Value: 0.018 Ω RDS(on) reduces conduction loss by >30% vs. legacy SO-8 MOSFETs, directly improving VRM efficiency at 100 A loads.

Use Scenario: Isolated 24 V-to-5 V DC-DC module powering PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward topology operating at 300 kHz.

Use Value: 7 nC Qg lowers gate driver losses and enables use of low-power 3.3 V GPIOs-reducing auxiliary supply complexity.

Automotive Body Control ModuleTelecom PoE Midspan Injector

Use Scenario: 12 V battery-fed power distribution unit managing headlight, wiper, and HVAC loads.

IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control and short-circuit protection per output.

Use Value: 30 V VDS rating accommodates automotive load-dump transients up to ±40 V, eliminating need for external TVS clamping.

Use Scenario: IEEE 802.3at-compliant midspan injector delivering 30 W over Cat5e cable to IP cameras and wireless APs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback converter, operating with 48 V input and 57 V clamp.

Use Value: 100 mJ EAS withstands repetitive inductive kickback from PoE cable disconnection events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual n-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon BSC014N04LSSingle-channel 40 V, 0.0014 Ω @ 10 V; higher RDS(on) density but no dual configurationRequires two devices + extra PCB area to replicate dual-channel functionalitySelect when ultra-low RDS(on) dominates over integration and layout simplicity
Vishay Si7850DPDual n-channel 30 V, 0.024 Ω @ 10 V, Qg = 12.5 nC - higher gate charge and RDS(on)Acceptable in <500 kHz converters where switching loss margin existsSelect when STS8DNH3LL is unavailable and moderate efficiency degradation is acceptable

Compared with BSC014N04LS and Si7850DP, STS8DNH3LL uniquely balances dual-channel integration, 4.5 V logic compatibility, and sub-10 nC gate charge-making it optimal for space-constrained, high-frequency synchronous rectifiers where board area and driver power matter.

Availability

STS8DNH3LL is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for STS8DNH3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in DC-DC, motor control, and load-switching applications.

FAQ

Is STS8DNH3LL pin-compatible with other dual SO-8 MOSFETs like Si7850DP?

No. STS8DNH3LL uses a non-standard pinout: Channels 1 and 2 share dedicated source banks (Pins 1–4 and 5–8), with independent drain pads. Si7850DP assigns gates to Pins 1 and 5 but shares a common source (Pins 4, 5, 8, 9), making direct replacement impossible without PCB redesign.

What is the maximum safe operating frequency for STS8DNH3LL in a synchronous buck converter?

Based on measured td(off) = 23 ns and tf = 8 ns with RG = 4.7 Ω, STS8DNH3LL supports stable operation up to 1.2 MHz in well-layout-controlled buck converters-provided gate drive strength exceeds 1 A peak and layout minimizes parasitic inductance.

Does STS8DNH3LL support 3.3 V logic-level gate drive?

Yes. With VGS(th) = 1 V (min) and RDS(on) = 0.025 Ω @ VGS = 4.5 V, it fully enhances using 3.3 V microcontroller outputs. However, conduction loss increases ~39% versus 4.5 V drive-designers should verify thermal margin at full load.

How is avalanche ruggedness validated for STS8DNH3LL?

STS8DNH3LL is tested per JEDEC JESD24-1 to guarantee 100 mJ single-pulse avalanche energy at TJ = 25°C, ID = 6 A. This rating is confirmed via unclamped inductive switching (UIS) tests using the circuit in Figure 16 of the datasheet, with waveform validation per Figure 17.

STS8DNH3LL Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8A
Rds On (Max) @ Id, Vgs:
22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
857pF @ 25V
Power - Max:
2W
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

STS8DNH3LL FAQ

1.How can I place an order for STS8DNH3LL through Aetrix?

Please submit a Request for Quotation (RFQ) for STS8DNH3LL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS8DNH3LL reliable?

The price and inventory of STS8DNH3LL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS8DNH3LL is usually 5 days.

3.What payment methods are accepted for STS8DNH3LL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS8DNH3LL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS8DNH3LL?

STS8DNH3LL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS8DNH3LL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS8DNH3LL?

For technical support, including STS8DNH3LL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS8DNH3LL requirements.

6.How does Aetrix verify that STS8DNH3LL is sourced from the original manufacturer or authorized distributors?

All STS8DNH3LL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS8DNH3LL meets industry standards.

7.What is the process for return or replacement of STS8DNH3LL?

All STS8DNH3LL units undergo pre-shipment inspection (PSI). If there is an issue with STS8DNH3LL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS8DNH3LL part is unused and in its original packaging.

Return procedure for STS8DNH3LL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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