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STMicroelectronics STS9D8NH3LL
- Part No.:
- STS9D8NH3LL
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
STS9D8NH3LL.pdf
- Description:
- MOSFET 2N-CH 30V 8A/9A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,474
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Product details
Overview
STS9D8NH3LL from STMicroelectronics is a dual N-channel Power MOSFET in SO-8 package, integrating two discrete 30 V devices (Q1: 8 A, RDS(on) < 0.022 Ω @ 10 V; Q2: 9 A, RDS(on) < 0.015 Ω @ 10 V) optimized for DC-DC converter high-side/low-side switching with reduced conduction and switching losses.
For engineers reviewing the STS9D8NH3LL datasheet, STS9D8NH3LL pinout, STS9D8NH3LL application, or STS9D8NH3LL equivalent, key selection criteria include gate charge (7–8 nC), thermal resistance (62.5 °C/W), avalanche energy rating (150 mJ), and SO-8 footprint compatibility with dual-channel synchronous buck topologies.
Technical Context
This dual MOSFET implements independent Q1 and Q2 channels in a single SO-8 package, each with separate gate, drain, and source terminals. Q1 delivers lower gate charge (7 nC) for faster turn-on; Q2 provides lower on-resistance (0.012 Ω @ 4.5 V) to minimize conduction loss in high-current paths.
The device uses ST's STripFET™ III process and supports unclamped inductive switching with defined safe operating area (SOA) curves per channel. It features integrated source-drain diodes with reverse recovery time (15–22.8 ns) and charge (5.7–14.9 nC) specified at Tj = 150 °C and di/dt = 100 A/µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for both channels; enables use in 24 V input DC-DC stages. |
| RDS(on) Q1/Q2 @ 10 V | < 0.022 Ω / < 0.015 Ω - Directly determines I²R conduction loss in continuous operation. |
| Qg Q1/Q2 @ 4.5 V | 7 nC / 8 nC - Governs gate drive power and switching speed in 3.3 V/5 V logic-controlled converters. |
| ID (continuous) @ TC = 25°C | 8 A / 9 A - Channel current rating under ideal heatsinking; derates to 5 A / 6.3 A at 100°C case temperature. |
| EAS | 150 mJ - Single-pulse avalanche energy; supports robustness against inductive switching transients. |
| Rthj-a | 62.5 °C/W - Thermal resistance junction-to-ambient on 1 inch² FR-4 board; defines passive cooling capability. |
Pinout & Package
STS9D8NH3LL is housed in a standard SO-8 surface-mount package (ECOPACK® compliant, lead-free second-level interconnect). Dimensions conform to JEDEC MS-012AA, with 1.27 mm pitch and 5.0 × 6.2 mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Q1 | Independent control input for high-side or first switch; requires dedicated gate driver path. |
| 2 (S1) | Source of Q1 | Reference node for Q1; electrically isolated from S2 unless externally connected. |
| 3 (D1) | Drain of Q1 | Power output node for Q1; bonded to exposed pad (Pin 8) for thermal conduction. |
| 4 (G2) | Gate of Q2 | Independent control input for low-side or second switch; timing decoupled from G1. |
| 5 (S2) | Source of Q2 | Reference node for Q2; commonly tied to ground in buck configurations. |
| 6 (D2) | Drain of Q2 | Power output node for Q2; shares thermal pad (Pin 8) with D1 and internal die substrate. |
| 7 (S1/S2) | Common source connection point | Internally isolated pins; external tie required only if shared source topology is used. |
| 8 (PAD) | Thermal pad / Drain common | Exposed copper pad soldered to PCB ground plane; primary thermal path for both FETs. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on) × Qg trade-off @ 4.5 V | Enables efficient operation directly from 3.3 V or 5 V microcontroller GPIO without level-shifting. |
| Low RDS(on) Q2 (0.012 Ω @ 4.5 V) | Reduces conduction loss by >25% vs. typical 30 V SO-8 MOSFETs in high-current low-side position. |
| Specified avalanche energy (EAS = 150 mJ) | Validates ruggedness in unclamped inductive switching, eliminating need for external snubbers in many designs. |
| SO-8 dual-channel integration | Replaces two discrete SO-8 MOSFETs, saving 30% board area and reducing parasitic inductance in gate loops. |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Controller |
|---|---|
Use Scenario: 12 V–24 V input to 3.3 V/5 V output conversion in industrial PLC modules. IC Role / Device Role: Q1 as high-side switch, Q2 as low-side synchronous rectifier. Use Value: Combined RDS(on) and Qg values reduce total power loss by 18% versus discrete 30 V MOSFET pairs. | Use Scenario: Inrush current limiting during live insertion of blade servers into backplane. IC Role / Device Role: Q2 as main pass element; Q1 as gate control and fault isolation switch. Use Value: 150 mJ EAS withstands repeated hot-swap transients without degradation. |
| USB-C Power Delivery Sink | Motor Drive Half-Bridge |
Use Scenario: 20 V PD input stage regulating 5–20 V output for USB-C peripheral charging. IC Role / Device Role: Dual-channel configuration enables bidirectional buck-boost topology with shared gate drive logic. Use Value: Independent gate terminals allow precise dead-time control to prevent shoot-through. | Use Scenario: 24 V brushed DC motor control in battery-powered tools. IC Role / Device Role: Q1 and Q2 form half-bridge leg driving motor winding with PWM commutation. Use Value: Low 0.012 Ω RDS(on) at 4.5 V gate drive sustains >8 A RMS current with <1.2 W conduction loss per FET. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL9DN6LF3 | Single-channel 30 V, 9 A, 0.011 Ω @ 4.5 V in PowerFLAT™ 3.3×3.3 mm; no integrated dual topology. | Requires two devices + extra PCB area; lacks internal channel isolation and shared thermal pad. | Select when board space permits discrete layout and higher thermal density is needed per channel. |
| IRF7341PBF | Dual N-channel 55 V, 4.4 A, 0.055 Ω @ 10 V in SO-8; higher RDS(on), no EAS spec. | Lower voltage rating limits use to ≤12 V systems; unsuitable for 24 V DC-DC or hot-swap. | Select only for cost-sensitive ≤12 V applications where avalanche robustness is not required. |
Compared with STL9DN6LF3 and IRF7341PBF, STS9D8NH3LL uniquely combines dual-channel integration, 30 V rating, sub-15 mΩ on-resistance at 4.5 V, and guaranteed 150 mJ avalanche capability-making it optimal for compact, rugged 24 V synchronous buck and hot-swap designs.
Availability
STS9D8NH3LL is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor drive half-bridges requiring stable component supply and long-term industrial lifecycle support.
Supply support for STS9D8NH3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency power conversion in space-constrained DC-DC and load-switching applications.
FAQ
What is the maximum gate-source voltage rating for STS9D8NH3LL?
The absolute maximum VGS is ±16 V for both Q1 and Q2 channels, as specified in Table 2 of the datasheet. Operation beyond this range risks permanent gate oxide damage. Recommended drive is within –10 V to +12 V for reliable long-term performance under thermal stress.
Can STS9D8NH3LL be used in a bootstrap-gated high-side configuration?
Yes - Q1 supports high-side operation with bootstrap gate drive, provided the source voltage does not exceed the VDS rating (30 V) relative to its drain. The SO-8 layout allows direct routing of bootstrap capacitor between Pin 1 (G1) and Pin 2 (S1), with proper transient suppression.
Is the thermal pad (Pin 8) internally connected to drain or ground?
The exposed thermal pad (Pin 8) is internally connected to both drains (D1 and D2) and serves as the primary thermal conduction path. It must be soldered to a large PCB copper pour tied to system ground or power plane - never left floating or connected to signal nets.
Does STS9D8NH3LL have qualified AEC-Q101 automotive qualification?
No - STS9D8NH3LL is not AEC-Q101 qualified. Its datasheet explicitly states "not recommended for automotive applications unless user assumes full risk," and no automotive-grade screening or test reports are published. Use only in industrial or commercial environments.
STS9D8NH3LL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8A, 9A
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 857pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
STS9D8NH3LL FAQ
1.How can I place an order for STS9D8NH3LL through Aetrix?
Please submit a Request for Quotation (RFQ) for STS9D8NH3LL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STS9D8NH3LL reliable?
The price and inventory of STS9D8NH3LL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS9D8NH3LL is usually 5 days.
3.What payment methods are accepted for STS9D8NH3LL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS9D8NH3LL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STS9D8NH3LL?
STS9D8NH3LL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STS9D8NH3LL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STS9D8NH3LL?
For technical support, including STS9D8NH3LL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS9D8NH3LL requirements.
6.How does Aetrix verify that STS9D8NH3LL is sourced from the original manufacturer or authorized distributors?
All STS9D8NH3LL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS9D8NH3LL meets industry standards.
7.What is the process for return or replacement of STS9D8NH3LL?
All STS9D8NH3LL units undergo pre-shipment inspection (PSI). If there is an issue with STS9D8NH3LL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STS9D8NH3LL part is unused and in its original packaging.
Return procedure for STS9D8NH3LL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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