Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS9P2UH7

Name: STS9P2UH7
Brand: STMicroelectronics
SKU: STS9P2UH7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STS9P2UH7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS9P2UH7.pdf

Description:: MOSFET P-CH 20V 9A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,784

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STS9P2UH7 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET in SO-8 package, rated for 20 V V_DS, 0.0195 Ω R_DS(on) (typ.) at V_GS = 4.5 V, and 9 A continuous drain current at T_pcb = 25 °C. It serves as a high-efficiency logic-level load switch in low-voltage DC power rails, especially where compact size and fast switching are critical.

For engineers reviewing the STS9P2UH7 datasheet, STS9P2UH7 pinout, STS9P2UH7 application, or STS9P2UH7 equivalent, key selection criteria include its ultra-low gate threshold (0.4–1 V), low Q_g (22 nC), high avalanche ruggedness, and SO-8 thermal performance with R_thj-pcb = 47 °C/W on 1-inch² FR-4 board.

Technical Context

This P-channel MOSFET operates with reversed polarity versus N-channel devices: source connects to higher potential (e.g., V_IN), drain to load, enabling high-side switching without level-shifting circuitry. Its 0.0195 Ω R_DS(on) at 4.5 V gate drive supports efficient operation in 3.3 V and 5 V logic-controlled systems.

Dynamic performance is optimized for fast switching: C_iss = 2390 pF, C_oss = 220 pF, and Q_gd = 3.6 nC ensure minimal Miller effect and clean turn-off behavior. The integrated body diode exhibits t_rr = 15.8 ns and Q_rr = 5.9 nC, suitable for synchronous rectification and inductive load control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; defines safe operation in ≤20 V DC systems like USB PD, battery protection, and 12 V automotive subsystems.
R_DS(on) (typ.)	0.0195 Ω @ V_GS = 4.5 V - Enables <180 mW conduction loss at 9 A, reducing thermal stress in space-constrained PCB layouts.
I_D (cont.)	9 A @ T_pcb = 25 °C - Sustains full-load current without external heatsinking when mounted on standard 1-inch² FR-4 board.
Q_g	22 nC - Low total gate charge allows fast switching with modest gate driver strength (e.g., MCU GPIO or small buffer), minimizing switching losses.
t_rr	15.8 ns - Short reverse recovery time enables reliable operation in hard-switched DC-DC converters up to ~500 kHz.
R_thj-pcb	47 °C/W - Thermal resistance from junction to PCB; confirms effective self-cooling via copper pour, eliminating need for dedicated thermal vias in many designs.

Pinout & Package

STS9P2UH7 is housed in a standard SO-8 surface-mount package (ECOPACK® compliant) with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AA: pins 1–4 on left side, 5–8 on right, viewed top-down with marking dot at pin 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to common drain terminal and exposed pad; carries main load current and dissipates heat to PCB copper.
5	Source (S)	High-side reference node; connects to input supply rail; sets channel conduction path when V_GS < V_th.
3	Gate (G)	Control terminal; requires negative V_GS relative to source to turn on; compatible with 1.8–4.5 V logic levels.

Key Features

Feature	Design Value
Ultra logic-level gate drive	V_GS(th) = 0.4–1 V ensures full enhancement with 1.8 V or 3.3 V microcontrollers, eliminating level shifters.
Low gate-to-drain charge (Q_gd)	3.6 nC minimizes Miller plateau duration, improving EMI profile and enabling stable PWM control at >200 kHz.
High avalanche energy rating	Rated for repetitive unclamped inductive switching (UIS); supports robust operation in motor gate drivers and relay snubbers.
Optimized SO-8 thermal design	Exposed drain pad and low R_thj-pcb allow 2.7 W power dissipation on standard PCB-no heatsink required for most 9 A pulsed loads.

Applications

USB Type-C Power Delivery Switch

Battery Protection Circuit

Use Scenario: Bidirectional 20 V/3 A power path control between host and peripheral in USB PD 3.0 implementations.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling reverse-current blocking and hot-swap sequencing.

Use Value: 0.0195 Ω R_DS(on) limits voltage drop to <60 mV at 3 A, preserving PD negotiation margins and meeting USB IF voltage tolerance specs.

Use Scenario: Overvoltage and overcurrent protection in single-cell Li-ion battery packs (up to 4.35 V).

IC Role / Device Role / Timing Role: Reverse-polarity and charge/discharge path switch controlled by protection IC.

Use Value: Fast 15.8 ns t_rr prevents latch-up during cell balancing transients; ±8 V V_GS rating withstands protection IC output swings.

Automotive Body Control Module

Industrial PLC Digital Output

Use Scenario: 12 V lighting and solenoid control in BCMs requiring ASIL-B compatible switching with diagnostic feedback.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing interface via R_DS(on) monitoring.

Use Value: Low 0.0225 Ω max R_DS(on) enables accurate current sense resolution down to ±100 mA with 10 mΩ shunt-less architecture.

Use Scenario: 24 V DC solid-state output stage in modular PLC I/O modules driving valves and indicators.

IC Role / Device Role / Timing Role: Logic-level controllable high-side driver replacing discrete BJT+MOSFET combos.

Use Value: 22 nC Q_g allows direct drive from FPGA I/O banks; SO-8 footprint simplifies layout vs. TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	V_DS = 40 V, R_DS(on) = 0.014 Ω @ 4.5 V, SO-8 but with different pinout (G/S/D layout differs)	Higher voltage margin suits 24 V industrial systems; lower R_DS(on) reduces conduction loss but increases capacitive load on gate driver	Select when 40 V rating and sub-15 mΩ on-resistance justify re-layout for pin compatibility.
ON Semiconductor NTMFS4C02N	V_DS = 20 V, R_DS(on) = 0.021 Ω @ 4.5 V, same SO-8 footprint and pinout, but higher Q_g = 28 nC	Drop-in replacement in existing layouts; slightly slower switching due to +27 % Q_g increases driver power demand	Choose for legacy board reuse where timing budget permits 20–30 % longer switching transitions.

Compared with BSC014N04LS and NTMFS4C02N, STS9P2UH7 offers the best balance of low gate charge (22 nC), tight threshold voltage distribution (0.4–1 V), and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally constrained 20 V logic-level switching where driver simplicity and reliability are prioritized over marginal R_DS(on) gains.

Availability

STS9P2UH7 is available at Aetrix Electronics and suitable for USB Power Delivery systems, battery protection circuits, automotive body control modules, and industrial PLC digital outputs requiring stable component supply and long-term manufacturability.

Supply support for STS9P2UH7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

STS9P2UH7 belongs to ST's STripFET™ H7 family-engineered specifically for high-efficiency, low-voltage power switching in space- and thermally-constrained applications using logic-level gate drive.

FAQ

What is the maximum continuous drain current at 100 °C PCB temperature?

The STS9P2UH7 supports 5.8 A continuous drain current when the printed circuit board temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the SO-8 package on standard FR-4; actual current capability depends on copper area, airflow, and ambient conditions.

Can STS9P2UH7 be used in synchronous rectification topologies?

Yes-its body diode has t_rr = 15.8 ns and Q_rr = 5.9 nC, enabling use in secondary-side synchronous rectification for flyback or forward converters operating below 500 kHz. However, external gate control timing must account for the P-channel configuration and ensure dead-time management to avoid shoot-through.

Is the SO-8 package lead-free and RoHS-compliant?

Yes-the STS9P2UH7 is manufactured in an ECOPACK®-compliant SO-8 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead finish is matte tin, and the device is halogen-free per ST's ECOPACK2 specification.

Does STS9P2UH7 require a gate resistor for stability?

A small gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. While not mandatory for basic on/off operation, it improves EMI performance and prevents unintended turn-on during fast dv/dt events in noisy environments.

STS9P2UH7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22.5mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2390 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

STS9P2UH7 FAQ

1.How can I place an order for STS9P2UH7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS9P2UH7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS9P2UH7 reliable?

The price and inventory of STS9P2UH7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS9P2UH7 is usually 5 days.

3.What payment methods are accepted for STS9P2UH7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS9P2UH7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS9P2UH7?

STS9P2UH7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS9P2UH7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS9P2UH7?

For technical support, including STS9P2UH7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS9P2UH7 requirements.

6.How does Aetrix verify that STS9P2UH7 is sourced from the original manufacturer or authorized distributors?

All STS9P2UH7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS9P2UH7 meets industry standards.

7.What is the process for return or replacement of STS9P2UH7?

All STS9P2UH7 units undergo pre-shipment inspection (PSI). If there is an issue with STS9P2UH7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS9P2UH7 part is unused and in its original packaging.

Return procedure for STS9P2UH7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…