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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STS9P3LLH6

Name: STS9P3LLH6
Brand: STMicroelectronics
SKU: STS9P3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STS9P3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: STS9P3LLH6.pdf

Description:: MOSFET P-CH 30V 9A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STS9P3LLH6 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET fabricated using STripFET™ H6 trench-gate technology, rated for -30 V V_DS, 15 mΩ max R_DS(on) at V_GS = -10 V and -4.5 A, -9 A continuous drain current, and optimized for high-efficiency DC-DC conversion in industrial power supplies.

For engineers reviewing the STS9P3LLH6 datasheet, STS9P3LLH6 pinout, STS9P3LLH6 application, or STS9P3LLH6 equivalent, key selection criteria include low gate charge (24 nC), avalanche ruggedness, SO-8 thermal performance (R_thJA = 47 °C/W), and verified operation up to 150 °C junction temperature.

Technical Context

This device implements a single P-channel silicon MOSFET with a trench-gate structure that reduces channel resistance and gate-to-drain capacitance. Its -30 V rating and 12–15 mΩ typical R_DS(on) support synchronous buck topologies where high-side switching is not required and low-side conduction loss must be minimized.

The SO-8 package enables surface-mount integration with defined thermal resistance (47 °C/W on 1-inch² FR-4, 2 oz Cu) and supports pulsed drain currents up to -36 A. The integrated body diode exhibits 20 ns reverse recovery time and 16 nC Q_rr, enabling fast switching in hard-commutated converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for low-voltage P-channel switching in 24 V systems
R_DS(on) max	15 mΩ at V_GS = -10 V, I_D = -4.5 A - Enables <150 mW conduction loss at 4.5 A
I_D cont	-9 A at T_amb = 25 °C - Supports high-current load switching with standard PCB copper
Q_g	24 nC - Reduces gate drive power loss and enables 1 MHz-class switching with low-R_G
R_thJA	47 °C/W - Defines thermal derating on standard 1-inch² FR-4 board with 2 oz Cu
V_GS(th)	-1 to -2 V - Ensures reliable turn-on with logic-level gate drivers (e.g., -3.3 V or -5 V)
C_iss	2615 pF - Impacts gate drive loop stability and EMI filtering requirements

Pinout & Package

STS9P3LLH6 is housed in an industry-standard SO-8 surface-mount package (ECOPACK® compliant), with exposed drain pad for enhanced thermal dissipation and mechanical compatibility with JEDEC MS-012AC.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source node; internally connected to pins 1–3 for low-inductance current return path
4	Gate (G)	Control terminal; requires negative V_GS for turn-on; 24 nC total gate charge defines driver sizing
5, 6, 7, 8	Drain (D)	High-current output node; pins 5–8 tied to exposed drain pad for thermal and electrical conduction

Key Features

Feature	Design Value
Very low R_DS(on)	12 mΩ typ. at V_GS = -10 V - Directly reduces I²R losses in high-current, low-voltage rails
Low gate charge	24 nC total - Enables efficient high-frequency PWM control without excessive gate driver power
High avalanche ruggedness	Rated for repetitive unclamped inductive switching - Eliminates need for external snubbers in relay or solenoid drivers
Low gate drive power loss	Q_g × f_SW × V_GS² scaling - Minimizes driver IC heating in compact power modules

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: Synchronous rectification in 12 V input, 3.3/5 V output buck converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side P-channel switch replacing Schottky diode to improve efficiency by >3% at full load.

Use Value: 15 mΩ R_DS(on) cuts conduction loss vs. 0.4 V diode drop, reducing thermal stress on PCB layout.

Use Scenario: Load switching for interior lighting, window lift motors, and HVAC actuators in 12 V vehicle networks.

IC Role / Device Role / Timing Role: High-reliability power switch with integrated avalanche capability for inductive load transients.

Use Value: Withstands 100 V load-dump spikes and 36 A pulsed currents without external clamping.

Server VRM Auxiliary Rails

Smart Energy Metering Systems

Use Scenario: Point-of-load (POL) regulation for FPGA auxiliary supplies requiring fast transient response.

IC Role / Device Role / Timing Role: Low-Q_g P-MOSFET enabling 500 kHz–1 MHz switching with minimal gate drive overhead.

Use Value: 24 nC Q_g allows use of low-power gate drivers (e.g., TC4427), reducing BOM count and layout area.

Use Scenario: Isolated power rail switching in DIN-rail mounted meters with strict thermal constraints.

IC Role / Device Role / Timing Role: Thermally robust MOSFET operating continuously at 75 °C ambient with no forced airflow.

Use Value: 47 °C/W R_thJA and 150 °C T_J(max) ensure stable operation under sealed enclosure conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	Higher R_DS(on) (200 mΩ @ V_GS = -10 V), TO-220 package, slower switching (Q_g = 65 nC)	Requires heatsink; unsuitable for >100 kHz switching or space-constrained designs	Select when cost sensitivity outweighs efficiency and size requirements
DMG2305UVT	SO-8, lower V_DS (-20 V), higher R_DS(on) (42 mΩ), lower I_D (-4.2 A)	Limited to ≤12 V systems; insufficient for 24 V industrial bus switching	Prefer only for ultra-low-cost 3.3/5 V logic-level loads with minimal current demand

Compared with IRF9530NPbF and DMG2305UVT, STS9P3LLH6 delivers superior conduction efficiency, higher voltage margin, and faster switching in compact SO-8 form-making it optimal for thermally constrained, medium-power P-channel switching where R_DS(on) and Q_g directly impact system efficiency and footprint.

Availability

STS9P3LLH6 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and smart energy metering systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for STS9P3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STS9P3LLH6 belongs to ST's STripFET™ H6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum safe operating temperature for STS9P3LLH6?

The STS9P3LLH6 has a specified junction temperature range of -55 °C to +150 °C. Under continuous operation at 25 °C ambient on a 1-inch² FR-4 board with 2 oz Cu, its thermal resistance (R_thJA) is 47 °C/W, allowing up to ~90 °C case temperature at 2.7 W dissipation before reaching 150 °C junction limit.

Can STS9P3LLH6 be used in linear mode (ohmic region) operation?

STS9P3LLH6 is characterized and qualified for switching operation only. Its Safe Operating Area (SOA) curve (Figure 1) shows pulse-limited operation down to DC at reduced voltages, but linear-mode use is not guaranteed-designers must verify thermal limits and avoid secondary breakdown under sustained V_DS/I_D combinations.

Does STS9P3LLH6 require a gate resistor for ESD protection?

No dedicated gate resistor is required for ESD protection-the device features built-in gate protection diodes per ST's standard process. However, a series gate resistor (typically 10–100 Ω) is recommended to dampen ringing, control dV/dt, and limit peak gate current during fast switching transitions.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = -1.1 V at -4.5 A and t_rr = 20 ns, offering lower forward drop than standard silicon diodes but higher than Schottky alternatives. Its Q_rr = 16 nC and I_RRM = -1.6 A make it suitable for moderate-frequency freewheeling, though Schottky diodes remain preferred for ultra-low-loss or >1 MHz applications.

STS9P3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ H6

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2615 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

STS9P3LLH6 FAQ

1.How can I place an order for STS9P3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STS9P3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STS9P3LLH6 reliable?

The price and inventory of STS9P3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STS9P3LLH6 is usually 5 days.

3.What payment methods are accepted for STS9P3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STS9P3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STS9P3LLH6?

STS9P3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STS9P3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STS9P3LLH6?

For technical support, including STS9P3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STS9P3LLH6 requirements.

6.How does Aetrix verify that STS9P3LLH6 is sourced from the original manufacturer or authorized distributors?

All STS9P3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STS9P3LLH6 meets industry standards.

7.What is the process for return or replacement of STS9P3LLH6?

All STS9P3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STS9P3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STS9P3LLH6 part is unused and in its original packaging.

Return procedure for STS9P3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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