STMicroelectronics STSJ100NH3LL

Overview

STSJ100NH3LL from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerSO-8™ package, optimized for high-efficiency DC-DC conversion in mobile CPU core power stages. It delivers 30 V V_DS, 0.0032 Ω R_DS(on) @ 10 V, 25 A continuous drain current at T_C = 25°C, and features exposed drain slug for improved thermal resistance (R_thj-c = 1.8 °C/W).

For engineers reviewing the STSJ100NH3LL datasheet, STSJ100NH3LL pinout, STSJ100NH3LL application, or STSJ100NH3LL equivalent, key selection criteria include low R_DS(on) × Q_g trade-off at 4.5 V gate drive, reduced switching losses, low threshold voltage (V_GS(th) = 1 V), and junction-to-case thermal performance critical for compact mobile VRM designs.

Technical Context

This MOSFET employs ST's STripFET™ III process with advanced metallization and an exposed backside drain slug to minimize R_thj-c and maximize current capability. Its low 1 V gate threshold enables direct drive from 1.8 V/3.3 V controllers, while the 0.004 Ω R_DS(on) @ 4.5 V supports efficient operation in synchronous buck topologies with 5 V gate bias.

The device exhibits 30 nC total gate charge (Q_g) and 10 nC gate-drain charge (Q_gd) at V_DD = 15 V, ID = 25 A, enabling fast switching with controlled dv/dt. Its 1.3 J single-pulse avalanche energy (E_AS) and 12.5 A non-repetitive avalanche current support robustness against inductive transients in unclamped loads.

Key Specifications

Pinout & Package

Package: PowerSO-8™ - surface-mount, thermally enhanced SO-8 variant with exposed drain pad on underside (backside drain contact). Dimensions per mechanical drawing: 4.8–5.0 mm × 5.8–6.2 mm × 1.75 mm height; 1.27 mm lead pitch; 8-pin layout with integrated thermal slug.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and SI7850DP-T1-GE3, STSJ100NH3LL offers the best balance of ultra-low R_DS(on) at both 4.5 V and 10 V, moderate Q_g, and lowest R_thj-c, making it optimal for thermally dense, high-current mobile CPU core VRMs where conduction loss and thermal management are primary constraints.

Availability

STSJ100NH3LL is available at Aetrix Electronics and suitable for mobile CPU core VRMs, laptop DC-DC converters, and high-efficiency synchronous buck regulators requiring stable component supply and traceable sourcing.

Supply support for STSJ100NH3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ III power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in space- and thermally-constrained portable computing platforms.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STSJ100NH3LL supports 15.6 A continuous drain current when the case temperature is maintained at 100°C, as specified in Table 6 of the datasheet. This derating reflects thermal limits imposed by its 1.8 °C/W junction-to-case resistance and 70 W total power dissipation rating at T_C = 25°C.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dv/dt and prevent oscillation during switching. With 30 nC total gate charge and typical driver output impedance, a 4.7 Ω resistor (as used in the datasheet's switching test circuit) balances turn-on speed and ringing suppression. Lower values increase peak gate current and EMI risk; higher values slow switching and raise losses.

Can STSJ100NH3LL be used in high-side configuration?

No-it is not rated or characterized for high-side operation. Its 1 V gate threshold and lack of integrated bootstrap diode or level-shifting capability make it unsuitable for floating high-side gate drive. It is designed and validated exclusively as a low-side or synchronous rectifier switch in buck and multiphase topologies.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad is electrically connected to the drain terminal (Pin 4 and backside metal). It must be soldered to a PCB copper pour tied to the drain net. Thermal vias beneath the pad should connect only to inner-layer drain planes-not to ground or other potentials-to avoid short circuits and ensure proper thermal and electrical integrity.