STMicroelectronics STSJ100NHS3LL

Overview

STSJ100NHS3LL from STMicroelectronics is an N-channel 30V Power MOSFET in PowerSO-8™ package, integrating a monolithic Schottky diode. It delivers R_DS(on) = 0.0032 Ω @ V_GS = 10 V, 20 A continuous drain current (T_C = 25°C), and 70 W total dissipation, optimized for synchronous rectification in high-efficiency DC-DC converters for computing and telecom infrastructure.

For engineers reviewing the STSJ100NHS3LL datasheet, STSJ100NHS3LL pinout, STSJ100NHS3LL application, or STSJ100NHS3LL equivalent, key selection criteria include its 4.5 V gate drive capability, low Q_g (27 nC typ.), integrated Schottky body diode with t_rr = 30 ns, and thermal resistance R_thj-pcb = 42 °C/W on FR-4.

Technical Context

This MOSFET employs ST's STripFET™ III process with monolithic Schottky integration, enabling simultaneous optimization of conduction loss (via ultra-low R_DS(on)) and switching loss (via reduced Q_g and C_iss = 4200 pF). Its gate threshold voltage (1–2.5 V) supports direct logic-level drive from 3.3 V/5 V controllers.

The device features a rated avalanche energy E_AS = 1.8 J and operates across –55 to +150 °C junction temperature. Its PowerSO-8™ package provides enhanced thermal performance over standard SO-8, with R_thj-c = 1.8 °C/W and dedicated source-tab layout for low-inductance PCB routing.

Key Specifications

Pinout & Package

STSJ100NHS3LL uses the PowerSO-8™ package: thermally enhanced 8-pin surface-mount outline with exposed drain tab (pins 1–4 and 6–8 are source/gate/drain terminals; pin 5 is drain tab, electrically connected to pins 1–4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and Si7852DP-T1-GE3, STSJ100NHS3LL uniquely combines ultra-low R_DS(on), logic-level gate drive, and integrated Schottky-reducing component count and layout complexity in space-constrained DC-DC converters without sacrificing thermal or switching performance.

Availability

STSJ100NHS3LL is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial PLC power supplies, and PoE-powered device designs requiring stable component supply and long-term production continuity.

Supply support for STSJ100NHS3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STSJ100NHS3LL supports 12.6 A continuous drain current at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits imposed by R_thj-c = 1.8 °C/W and junction temperature cap of 150°C. Designers must verify PCB copper area and airflow to sustain this current reliably.

Does the integrated Schottky diode replace an external diode in synchronous rectification?

Yes-the monolithic Schottky diode is integrated between source and drain and shares the same die. It functions as the body diode but with lower V_SD (0.75 V @ 5 A) and faster t_rr (30 ns), eliminating need for an external Schottky in most synchronous buck applications. No additional biasing or layout is required.

Is STSJ100NHS3LL suitable for 3.3 V gate drive applications?

Yes-its gate threshold voltage range is 1.0–2.5 V, and R_DS(on) is characterized down to V_GS = 4.5 V (0.0042 Ω max). At 3.3 V, it remains partially enhanced and usable in low-duty-cycle or low-current roles, though full 20 A conduction requires ≥4.5 V gate drive per datasheet specifications.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by the 20 A continuous rating at T_C = 25°C and thermal resistance limits. The device cannot sustain 20 A at ambient >85°C without forced cooling or enlarged PCB copper, as junction temperature would exceed 150°C. Pulse operation up to 80 A is allowed only for short durations constrained by thermal mass and t_SC.