Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STT3PF30L

Part No.:
STT3PF30L
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
SOT-23-6
Datasheet:
AetrixSTT3PF30L.pdf
Description:
MOSFET P-CH 30V 2.4A SOT23-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,184

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STT3PF30L from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SOT23-6L package, rated for 30 V VDS, 3 A continuous drain current (ID), and 0.14 Ω typical RDS(on) at VGS = 10 V. It features low threshold drive (VGS(th) = 1–2.5 V), rugged avalanche capability, and is optimized for battery management and DC-DC converter high-side switching in portable electronics.

For engineers reviewing the STT3PF30L datasheet, STT3PF30L pinout, STT3PF30L application, or STT3PF30L equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, thermal resistance (Rthj-amb = 78 °C/W on 1"² pad), source-drain diode forward voltage (VSD = 1.2 V), and safe operating area limits under pulsed conditions.

Technical Context

This device employs ST's StripFET™ II process with single-feature-size geometry, enabling high cell density and low RDS(on) while maintaining robustness against repetitive avalanche energy. Its P-channel topology supports high-side load switching without level-shifting circuitry.

The MOSFET exhibits gate charge parameters (Qg = 4.8 nC, Qgd = 2 nC) and switching times (td(on) = 14.5 ns, tf = 23 ns) optimized for medium-frequency DC-DC conversion up to ~500 kHz, with specified operation across –55°C to 150°C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage; defines upper limit for battery input or rail voltage in portable power switches.
RDS(on)0.14 Ω (typ.) at VGS = 10 V - Determines conduction loss in high-side switch; enables ≤450 mW I²R loss at 3 A.
ID (cont)2.4 A at TC = 25°C - Continuous current rating under ideal heatsinking; derates to 1.5 A at 100°C case temperature.
VGS(th)1.0–2.5 V - Logic-compatible gate threshold; ensures turn-on with 3.3 V or 5 V microcontroller GPIOs without external driver.
Qg4.8 nC - Total gate charge required for full switching; sets minimum drive strength needed for <50 ns transition times.
VSD1.2 V at ISD = 3 A - Forward voltage of integrated body diode; impacts reverse-current path loss in synchronous buck freewheeling.
Rthj-amb78 °C/W - Junction-to-ambient thermal resistance on 1"² 2 oz. Cu pad; defines maximum power dissipation before thermal shutdown at ambient.

Pinout & Package

SOT23-6L package: 6-pin surface-mount outline with exposed drain pad (pin 4–6 tied internally to drain); compact footprint (3.1 × 3.0 mm) suitable for space-constrained portable PCBs.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts logic-level voltage to modulate channel conductivity; requires <100 nA leakage current at ±16 V.
2 (S)SourceReference node for gate drive; connected to system ground or positive rail depending on high/low-side configuration.
3 (D)DrainPower output node; pins 4–6 are internally bonded to this terminal and serve as thermal/power pads.
4,5,6 (D)Drain (thermal pad)Multiple drain terminals enhance thermal conduction and current handling; must be soldered to large copper pour for Rthj-amb compliance.

Key Features

FeatureDesign Value
Low RDS(on) at 4.5 V0.165 Ω max - Enables efficient switching with standard 5 V logic or USB-powered control rails.
Rugged avalanche ratingSpecified unclamped inductive switching capability - eliminates need for external snubbers in motor drive flyback paths.
Fast switchingtd(off) = 90 ns, tf = 23 ns - Supports high-frequency DC-DC topologies while minimizing overlap losses.
Integrated body diodeVSD = 1.2 V, trr = 35 ns - Provides controlled freewheeling path in buck converters without discrete diode cost or layout area.

Applications

Battery Protection CircuitUSB Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for handheld devices.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated by protection IC signal.

Use Value: Low 0.14 Ω RDS(on) minimizes voltage drop during full-load discharge, preserving runtime and reducing thermal stress on PCB traces.

Use Scenario: Hot-swap enable/disable of USB VBUS to peripheral modules in portable docking stations.

IC Role / Device Role / Timing Role: Load switch isolating downstream 5 V rail; driven directly by 3.3 V microcontroller GPIO.

Use Value: 1.6 V VGS(th) typ. ensures reliable turn-on with 3.3 V logic, eliminating level shifter and saving BOM cost and board space.

DC-DC Synchronous Buck High-SideDC Motor H-Bridge Upper Arm

Use Scenario: High-side switch in 3.3 V or 5 V input buck converter powering SoC cores in ultra-thin laptops.

IC Role / Device Role / Timing Role: Main power transistor in non-isolated step-down regulator; switched at 300–500 kHz.

Use Value: 4.8 nC Qg and 23 ns fall time enable efficient switching with minimal gate driver power consumption and EMI.

Use Scenario: Upper quadrant switch in bidirectional 12 V brushed DC motor driver for robotic actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch in half-bridge configuration; commutated with dead-time control.

Use Value: 30 V VDS rating accommodates motor back-EMF spikes up to 24 V, ensuring reliable operation without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG3415L-7RDS(on) = 0.045 Ω @ VGS = 4.5 V; SOT23-3 package (3-pin, no thermal pad)Lower RDS(on) but higher gate charge (Qg = 6.5 nC); limited thermal performance due to 3-pin packageSelect when lower conduction loss is critical and board layout allows larger thermal relief; avoid in high-temperature environments.
AO3401RDS(on) = 0.085 Ω @ VGS = 4.5 V; same SOT23-6L package; higher ID rating (4 A)Superior current handling and lower on-resistance, but slightly higher VGS(th) (1.2–2.4 V)Prefer for new designs requiring margin in current or efficiency; verify gate drive compatibility at lower VGS.

Compared with DMG3415L-7 and AO3401, STT3PF30L offers balanced trade-offs: moderate RDS(on) with proven thermal reliability in SOT23-6L, making it optimal for cost-sensitive, thermally constrained portable systems where gate drive simplicity and avalanche ruggedness are prioritized over ultra-low conduction loss.

Availability

STT3PF30L is available at Aetrix Electronics and suitable for battery management in nomadic equipment, USB power switching, and DC-DC converter high-side applications requiring stable component supply and long-term industrial availability.

Supply support for STT3PF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STripFET™ II product line delivers high-density, low-RDS(on) power MOSFETs targeting portable power management, motor control, and load switching where thermal efficiency and gate-drive simplicity are essential.

FAQ

Is STT3PF30L suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and typical value of 1.6 V, STT3PF30L fully turns on using standard 3.3 V GPIO outputs. At VGS = 3.3 V, RDS(on) remains below 0.2 Ω, ensuring low conduction loss without external level shifting.

What is the maximum continuous power dissipation at room temperature?

At TC = 25°C, the device supports 1.6 W total power dissipation. This corresponds to ~2.4 A continuous drain current with 0.14 Ω RDS(on), assuming ideal heatsinking. Derating is required above 25°C case temperature per the 1.5 A rating at 100°C.

Does STT3PF30L include an integrated ESD protection diode?

No. The datasheet does not specify on-chip ESD protection structures. External TVS or RC filtering is recommended on gate and drain lines in systems exposed to human contact or cable hot-plug events, especially in USB or battery interface applications.

Can STT3PF30L replace N-channel MOSFETs in high-side configurations?

Yes - as a P-channel device, STT3PF30L is inherently suited for high-side switching without bootstrap circuitry. Unlike N-channel alternatives, it avoids complexity from floating gate drivers and timing-critical bootstrap capacitor recharge, simplifying layout and improving reliability in low-voltage portable rails.

STT3PF30L Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
SOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
420 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-6

STT3PF30L FAQ

1.How can I place an order for STT3PF30L through Aetrix?

Please submit a Request for Quotation (RFQ) for STT3PF30L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STT3PF30L reliable?

The price and inventory of STT3PF30L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STT3PF30L is usually 5 days.

3.What payment methods are accepted for STT3PF30L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STT3PF30L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STT3PF30L?

STT3PF30L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STT3PF30L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STT3PF30L?

For technical support, including STT3PF30L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STT3PF30L requirements.

6.How does Aetrix verify that STT3PF30L is sourced from the original manufacturer or authorized distributors?

All STT3PF30L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STT3PF30L meets industry standards.

7.What is the process for return or replacement of STT3PF30L?

All STT3PF30L units undergo pre-shipment inspection (PSI). If there is an issue with STT3PF30L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STT3PF30L part is unused and in its original packaging.

Return procedure for STT3PF30L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STT3PF30L Tags

  • STT3PF30L
  • STT3PF30L PDF
  • STT3PF30L Datasheet
  • STT3PF30L Specifications
  • STT3PF30L Images
  • STMicroelectronics
  • STMicroelectronics STT3PF30L
  • Buy STT3PF30L
  • STT3PF30L Price
  • STT3PF30L Distributor
  • STT3PF30L Supplier
  • STT3PF30L Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER