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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STT4PF20V

Name: STT4PF20V
Brand: STMicroelectronics
SKU: STT4PF20V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STT4PF20V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: STT4PF20V.pdf

Description:: MOSFET P-CH 20V 3A SOT-23-6

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Product details

Overview

STT4PF20V from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SOT23-6L package, rated for 20 V V_DS, 3 A continuous drain current at T_C = 25°C, and ultra-low gate threshold voltage (V_GS(th) = 0.6 V typ) enabling 2.7 V logic-level drive. It delivers R_DS(on) = 0.090 Ω @ 4.5 V and 0.100 Ω @ 2.7 V, optimized for battery-powered DC-DC converters and mobile phone load switching.

For engineers reviewing the STT4PF20V datasheet, STT4PF20V pinout, STT4PF20V application, or STT4PF20V equivalent, key selection criteria include its 2.7 V gate drive compatibility, 0.090 Ω on-resistance at 4.5 V, SOT23-6L thermal performance (R_thj-amb = 78 °C/W on 1 in² FR-4), and rugged source-drain diode (V_SD = 1.2 V @ 3 A).

Technical Context

This device uses ST's StripFET™ II process with single-feature-size strip architecture to achieve high cell density and low R_DS(on). Its P-channel topology enables high-side switching without level-shifting, and the 0.6 V typical gate threshold ensures reliable turn-on with 2.7 V microcontroller I/O.

Dynamic parameters include 5.8 nC total gate charge (Q_g) at V_GS = 4.5 V, 500 pF input capacitance (C_iss), and 20 ns reverse recovery time (t_rr) under inductive load conditions - supporting efficient high-frequency switching up to several hundred kHz in synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; supports 12 V nominal battery rails with margin.
R_DS(on) @ 4.5 V	0.090 Ω - Enables ≤ 0.2 W conduction loss at 1.5 A, critical for thermally constrained mobile PCBs.
V_GS(th)	0.6 V typ - Ensures full enhancement with 2.7 V logic, eliminating need for gate driver ICs.
I_D (cont.)	3 A @ T_C = 25°C - Sustains peak load currents in portable power management without derating.
Q_g	5.8 nC - Low gate charge reduces drive power and switching transition time in PWM control.
t_rr	20 ns - Minimizes body-diode conduction loss during dead-time in synchronous rectification.
R_thj-amb	78 °C/W - Thermal resistance on standard 1 in² FR-4 board defines safe operating area for unforced-air designs.

Pinout & Package

SOT23-6L package: 1.45 mm × 3.10 mm × 1.30 mm profile, 6-pin surface-mount outline with exposed drain pad for thermal relief. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain, Pin 4 = Source, Pin 5 = Drain, Pin 6 = Gate - dual-gate/dual-source configuration for paralleled internal cells and reduced package inductance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Pin 6	Gate	Parallel-connected gate terminals reduce effective gate resistance and improve switching speed uniformity.
Pin 2 & Pin 4	Source	Dual-source terminals lower source inductance and improve current sharing across internal FET cells.
Pin 3 & Pin 5	Drain	Dual-drain terminals connect to common drain node; pins 3/5 and thermal pad share same potential for optimal heat spreading.

Key Features

Feature	Design Value
Ultra-low V_GS(th)	0.6 V typical enables direct interface with 2.7 V microcontrollers and PMICs without level shifters.
StripFET™ II process	High cell density yields 0.090 Ω R_DS(on) in SOT23-6L - 30% lower than prior-gen P-channel MOSFETs in same footprint.
Rugged source-drain diode	V_SD = 1.2 V @ 3 A and t_rr = 20 ns support reliable synchronous rectification in buck converters.
Thermal robustness	150°C max junction temperature and 78 °C/W R_thj-amb allow sustained 1.9 A operation at T_C = 100°C.

Applications

Mobile Phone Power Switching

USB OTG Power Path Control

Use Scenario: Enabling/disabling 5 V USB power delivery from lithium-ion battery (3.0–4.2 V) to peripheral devices.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling VBUS path; driven directly by 2.7 V GPIO.

Use Value: 0.100 Ω R_DS(on) @ 2.7 V limits voltage drop to < 300 mV at 3 A, preserving USB spec compliance.

Use Scenario: Bidirectional power arbitration between host and device in USB On-The-Go systems.

IC Role / Device Role / Timing Role: Load switch isolating battery from VBUS line during role swap; fast turn-off prevents backfeed.

Use Value: 54 ns turn-off delay and 12 ns fall time ensure sub-100 ns isolation, meeting USB OTG timing constraints.

Portable DC-DC Converter High-Side Switch

Battery Protection Circuitry

Use Scenario: High-side switch in 3.3 V/5 V buck converter for wearable sensor modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in non-isolated buck stage; commutated at 500 kHz.

Use Value: 20 ns reverse recovery time minimizes shoot-through risk and reduces diode conduction loss by >40% vs standard MOSFETs.

Use Scenario: Overcurrent and short-circuit protection in smart battery packs for tablets.

IC Role / Device Role / Timing Role: Primary discharge switch placed between battery cathode and system ground.

Use Value: 12 A pulsed drain current rating (I_DM) supports 3× overcurrent fault handling without latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	R_DS(on) = 0.115 Ω @ 2.5 V; V_GS(th) = 0.7 V typ; SOT-23 package (non-6L)	Higher gate threshold requires ≥2.5 V drive; no dual-source/drain layout	Prefer when board space is tighter and 0.115 Ω R_DS(on) is acceptable.
AO3401	R_DS(on) = 0.085 Ω @ 4.5 V but 0.120 Ω @ 2.7 V; V_GS(th) = 1.0 V typ; SO-23 footprint	Less reliable 2.7 V turn-on; higher Q_g (8.5 nC) increases drive loss	Choose only if lower R_DS(on) at 4.5 V is prioritized over 2.7 V compatibility.

Compared with Si2301DDS and AO3401, STT4PF20V uniquely combines 0.6 V gate threshold, dual-terminal layout for lower parasitic inductance, and 0.100 Ω R_DS(on) at 2.7 V - making it optimal for space-constrained, low-voltage mobile power switches where gate drive headroom is minimal.

Availability

STT4PF20V is available at Aetrix Electronics and suitable for mobile phone power switching, USB OTG power path control, and portable DC-DC converter high-side switching requiring stable component supply and long-term lifecycle assurance.

Supply support for STT4PF20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, compact power conversion - specifically engineered for battery-operated devices demanding low gate drive voltage, low R_DS(on), and robust thermal performance in miniature packages.

FAQ

What is the maximum continuous drain current at 85°C case temperature?

At T_C = 85°C, the STT4PF20V supports 2.3 A continuous drain current, interpolated from the derating curve: 3 A at 25°C and 1.9 A at 100°C, assuming linear thermal derating. This value ensures safe operation in handheld enclosures with moderate airflow.

Does STT4PF20V require a gate resistor for ESD protection?

No external gate resistor is required for ESD protection - the device integrates gate protection diodes rated for ±2 kV HBM per JESD22-A114. However, a 10–47 Ω series gate resistor is recommended to dampen ringing during fast switching and limit peak gate current from microcontroller drivers.

Can STT4PF20V be used in parallel with identical units?

Yes - the dual-gate/dual-source pinout and matched threshold voltage (±0.2 V) enable current sharing when paralleled. Use identical PCB trace lengths and Kelvin-source routing to minimize imbalance; derate total current by 15% for thermal coupling effects in SOT23-6L arrays.

Is the SOT23-6L package lead-free and RoHS compliant?

Yes, STT4PF20V is manufactured in a lead-free, RoHS-compliant process per EU Directive 2011/65/EU and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life at ≤30°C/60% RH without dry-pack requirements.

STT4PF20V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 7.8 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

STT4PF20V FAQ

1.How can I place an order for STT4PF20V through Aetrix?

Please submit a Request for Quotation (RFQ) for STT4PF20V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STT4PF20V reliable?

The price and inventory of STT4PF20V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STT4PF20V is usually 5 days.

3.What payment methods are accepted for STT4PF20V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STT4PF20V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STT4PF20V?

STT4PF20V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STT4PF20V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STT4PF20V?

For technical support, including STT4PF20V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STT4PF20V requirements.

6.How does Aetrix verify that STT4PF20V is sourced from the original manufacturer or authorized distributors?

All STT4PF20V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STT4PF20V meets industry standards.

7.What is the process for return or replacement of STT4PF20V?

All STT4PF20V units undergo pre-shipment inspection (PSI). If there is an issue with STT4PF20V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STT4PF20V part is unused and in its original packaging.

Return procedure for STT4PF20V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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