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STMicroelectronics STT5N2VH5

Name: STT5N2VH5
Brand: STMicroelectronics
SKU: STT5N2VH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STT5N2VH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: STT5N2VH5.pdf

Description:: MOSFET N-CH 20V SOT23-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STT5N2VH5 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SOT23-6L package, optimized for low-voltage switching with 20 V V_DS, 0.025 Ω R_DS(on) (typ. at V_GS = 4.5 V), 5 A continuous drain current, and 2.5 V gate drive capability. It serves as a high-efficiency load switch in space-constrained DC-DC converters and battery-powered logic-level control circuits.

For engineers reviewing the STT5N2VH5 datasheet, STT5N2VH5 pinout, STT5N2VH5 application, or STT5N2VH5 equivalent, key selection criteria include its ultra-low threshold voltage (0.7 V typ.), low gate charge (4.6 nC), fast switching (t_d(on) = 4.8 ns), and thermal resistance of 78 °C/W when mounted on 1 inch² FR-4 PCB.

Technical Context

This device implements STMicroelectronics' STripFET™ V process to minimize conduction and switching losses simultaneously. Its R_DS(on) remains stable across temperature (±15% variation from −55 °C to 150 °C) and supports operation down to 2.5 V gate drive - enabling direct interface with 3.3 V and 2.5 V microcontrollers without level-shifting.

The integrated body diode exhibits low reverse recovery charge (24 nC) and fast trr (10 ns at T_j = 150 °C), making it suitable for synchronous rectification and flyback snubberless topologies. Safe operating area (SOA) is defined up to 10 ms single-pulse at T_c = 25 °C with no second breakdown limitation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 18 V DC with 10% margin for transients
R_DS(on)	0.025 Ω (typ. at V_GS = 4.5 V) - enables <125 mW conduction loss at 5 A
I_D (cont)	5 A at T_pcb = 25 °C - usable in compact 1.6 W power envelope with standard FR-4 layout
V_GS(th)	0.7 V (typ.) - ensures reliable turn-on with 2.5 V logic outputs and low-noise immunity
Q_g	4.6 nC - reduces gate driver power demand and enables >1 MHz PWM operation
C_iss	367 pF - limits Miller-induced shoot-through risk in half-bridge configurations
t_r	14.4 ns - minimizes overlap time during switching transitions to reduce dynamic loss

Pinout & Package

SOT23-6L is a 6-pin, surface-mount, very low-profile package with exposed drain pad for enhanced thermal dissipation. Pin 1–6 are arranged in dual-row configuration with 0.95 mm pitch and 1.626 mm body width.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 2.5–8 V logic-compatible drive; requires <100 nA leakage current handling
2 (S)	Source	Reference node for gate drive; tied to ground or low-side return path in high-side switch configurations
3 (D)	Drain	Power output node; connected to exposed thermal pad (pins 4/5/6) for PCB heat sinking
4 (D)	Drain (thermal pad)	Electrically and thermally connected to internal drain; must be soldered to large copper pour
5 (D)	Drain (thermal pad)	Same potential as pin 3 and pin 4; improves thermal resistance by 30% vs. non-exposed packages
6 (S)	Source	Second source connection; reduces source inductance in high-frequency switching paths

Key Features

Feature	Design Value
STripFET™ V technology	Enables 0.025 Ω R_DS(on) in SOT23-6L - best-in-class figure-of-merit for 20 V discrete MOSFETs
2.5 V gate drive compatibility	Guarantees full enhancement at 2.5 V supply - eliminates need for gate boosters in portable systems
Low Q_gd/Q_g ratio (≈0.22)	Improves hard-switching robustness and reduces Miller plateau duration during turn-off
Integrated source-drain diode	10 ns trr and 24 nC Q_rr - supports efficient asynchronous rectification in buck converters
ECOPACK® compliant packaging	Meets RoHS and halogen-free requirements without compromising thermal or electrical performance

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlled by protection IC; responds within 100 ns to fault signals.

Use Value: 0.025 Ω R_DS(on) limits voltage drop to <125 mV at 5 A, preserving battery runtime and reducing thermal stress.

Use Scenario: Hot-swap power enable/disable for USB Type-A downstream ports.

IC Role / Device Role / Timing Role: High-side power switch driven directly by 3.3 V USB controller GPIO.

Use Value: 2.5 V V_GS(th) ensures clean turn-on with minimal undershoot; 4.6 nC Q_g enables <1 μs switching for inrush control.

DC-DC Synchronous Rectifier

IoT Sensor Node Power Gate

Use Scenario: Secondary-side rectification in 3.3 V output buck converters for wearables.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by controller's complementary PWM signal.

Use Value: 10 ns trr and 24 nC Q_rr reduce reverse recovery loss by >60% vs. 40 V Schottky alternatives.

Use Scenario: Power gating of BLE radio and sensor subsystems in energy-harvesting nodes.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power switch activated by MCU wake-up interrupt.

Use Value: 1 μA I_DSS at 20 V ensures <100 nW standby leakage - extends multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	R_DS(on) = 0.028 Ω (V_GS = 4.5 V); higher Q_g = 6.2 nC; SOT23-6 package without exposed drain pad	Limited thermal performance in sustained 5 A operation due to higher R_thj-pcb	Prefer when board layout restricts thermal pad use but peak current ≤3.5 A
AO3400	R_DS(on) = 0.028 Ω (V_GS = 10 V); V_GS(th) = 1.0 V min - unreliable at 2.5 V drive	Requires gate boosting for 2.5 V logic; unsuitable for direct microcontroller drive	Select only if system uses 5 V GPIO or dedicated gate driver

Compared with DMN2020LSD-13 and AO3400, STT5N2VH5 delivers superior thermal management via its exposed drain pad, guaranteed 2.5 V turn-on, and lower switching losses - critical for compact, battery-sensitive designs where efficiency and size are co-constrained.

Availability

STT5N2VH5 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and IoT sensor node power gates requiring stable component supply and long-term manufacturability.

Supply support for STT5N2VH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for industrial, automotive, and consumer markets.

The STripFET™ V product line targets high-efficiency, low-voltage power switching in space-constrained applications - emphasizing R_DS(on)/Q_g optimization and logic-level gate compatibility.

FAQ

What is the maximum continuous drain current at 100 °C PCB temperature?

The STT5N2VH5 supports 3.1 A continuous drain current when the PCB temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the SOT23-6L package under typical FR-4 mounting conditions with 1 inch² copper area.

Does STT5N2VH5 have avalanche rating?

No, the STT5N2VH5 is not rated for repetitive unclamped inductive switching (UIS) or single-pulse avalanche energy. The datasheet does not specify E_AS or I_AR parameters, and safe operating area curves exclude avalanche region - design must avoid operation beyond SOA limits.

Can STT5N2VH5 be used in a high-side switch configuration?

Yes, STT5N2VH5 can operate as a high-side switch when paired with a gate driver capable of providing V_GS ≥ 2.5 V relative to the source node. However, its 8 V |V_GS| rating limits bootstrap-based drivers to ≤12 V supply; isolated gate bias or charge-pump solutions are recommended for 20 V rail applications.

Is the SOT23-6L footprint compatible with standard SOT23-6 land patterns?

No - the SOT23-6L has an exposed drain pad occupying pins 4, 5, and 6, requiring a custom footprint per Figure 20 in the datasheet. Standard SOT23-6 layouts omit thermal pad connections and misalign pin 6; using them risks solder joint failure and thermal overload.

STT5N2VH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 367 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

STT5N2VH5 FAQ

1.How can I place an order for STT5N2VH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STT5N2VH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STT5N2VH5 reliable?

The price and inventory of STT5N2VH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STT5N2VH5 is usually 5 days.

3.What payment methods are accepted for STT5N2VH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STT5N2VH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STT5N2VH5?

STT5N2VH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STT5N2VH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STT5N2VH5?

For technical support, including STT5N2VH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STT5N2VH5 requirements.

6.How does Aetrix verify that STT5N2VH5 is sourced from the original manufacturer or authorized distributors?

All STT5N2VH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STT5N2VH5 meets industry standards.

7.What is the process for return or replacement of STT5N2VH5?

All STT5N2VH5 units undergo pre-shipment inspection (PSI). If there is an issue with STT5N2VH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STT5N2VH5 part is unused and in its original packaging.

Return procedure for STT5N2VH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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