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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STT5PF20V

Name: STT5PF20V
Brand: STMicroelectronics
SKU: STT5PF20V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STT5PF20V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: STT5PF20V.pdf

Description:: MOSFET P-CH 20V 5A SOT23-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STT5PF20V from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SOT23-6L package, rated for 20 V V_DSS, 5 A continuous drain current at T_C = 25 °C, and ultra-low 2.5 V gate threshold voltage. It delivers R_DS(on) = 0.065 Ω @ 4.5 V and 0.085 Ω @ 2.5 V, enabling efficient load switching in space-constrained battery-powered systems such as mobile phone power rails.

For engineers reviewing the STT5PF20V datasheet, STT5PF20V pinout, STT5PF20V application, or STT5PF20V equivalent, key selection criteria include verified 2.5 V logic-level drive compatibility, confirmed 0.085 Ω R_DS(on) at 2.5 V gate drive, documented source-drain diode forward voltage of 1.2 V at 5 A, and validated SOT23-6L thermal resistance (R_thj-amb = 78 °C/W).

Technical Context

This P-channel MOSFET uses ST's StripFET™ II process with single-feature-size strip geometry to achieve high cell density and low on-resistance. Its gate threshold voltage (V_GS(th) = 0.45 V typ.) enables reliable turn-on with 2.5 V microcontroller I/O, while its 20 V V_DSS rating supports Li-ion battery input ranges (up to 4.2 V per cell × 4 cells).

The device integrates an intrinsic body diode with t_rr = 32 ns and Q_rr = 12.8 nC at T_j = 150 °C, supporting synchronous rectification in DC-DC buck converters. Safe operating area (SOA) is pulse-width limited per datasheet Figure 4, with P_TOT = 1.6 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage compatible with 4-cell Li-ion battery stacks (≤16.8 V nominal).
R_DS(on) @ 2.5 V	0.085 Ω typ. - Enables ≤0.21 W conduction loss at 5 A, critical for thermally constrained portable PCBs.
V_GS(th)	0.45 V typ. - Ensures robust turn-on with 2.5 V logic drivers, eliminating need for level-shifting circuitry.
I_D (cont.)	5 A @ T_C = 25 °C - Supports high-current load switches in mobile baseband power domains.
t_rr	32 ns - Limits reverse recovery energy loss in high-frequency (≥1 MHz) DC-DC converters.
Q_g	4.5 nC - Matches low-drive-strength MCU GPIOs without requiring external gate drivers.
R_thj-amb	78 °C/W - Defines thermal derating curve for SOT23-6L on standard 1 oz copper FR4 with no heatsink.

Pinout & Package

SOT23-6L (TSOP-6) package: 1.5 mm × 2.9 mm footprint, 1.1 mm height, 6-pin surface-mount outline optimized for automated placement and reflow. Pin 1 marked by notch or dot; leads are gull-wing, 0.95 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 2.5 V logic-level drive; requires <100 nA leakage current budget.
2 (S)	Source	Reference node for gate drive; tied to positive rail in high-side switch configuration.
3 (D)	Drain	Switched output node; connects to load; handles 5 A continuous with SOA-limited pulse capability.
4 (S)	Source (redundant)	Second source bond wire; reduces package inductance and improves current sharing in parallel layouts.
5 (D)	Drain (redundant)	Second drain bond wire; lowers R_DS(on) contribution from leadframe resistance.
6 (S)	Source (redundant)	Third source connection; enhances thermal path from die to PCB via exposed pad (not electrically isolated).

Key Features

Feature	Design Value
Ultra-low V_GS(th)	0.45 V typical enables direct interface with 2.5 V FPGA/ASIC I/O banks without level shifters.
StripFET™ II process	Delivers 0.065 Ω R_DS(on) @ 4.5 V in SOT23-6L - 35% lower than prior-generation P-channel MOSFETs in same footprint.
Integrated body diode	1.2 V V_SD @ 5 A allows use as synchronous rectifier in buck converters without external Schottky.
Low Q_g/Q_gd ratio	Q_gd/Q_g = 1.75/4.5 ≈ 0.39 - improves switching efficiency and EMI performance in 1–2 MHz DC-DC designs.
Thermal design support	R_thj-amb = 78 °C/W measured per JEDEC JESD51-2 - enables accurate junction temperature estimation using PCB copper area.

Applications

Mobile Phone Power Management

Li-ion Battery Protection Circuits

Use Scenario: High-side load switch controlling RF power amplifier supply rail in dual-SIM smartphones.

IC Role / Device Role: P-channel MOSFET configured as active-high enable switch with 2.5 V GPIO control.

Use Value: 0.085 Ω R_DS(on) @ 2.5 V ensures <215 mW loss at 5 A, minimizing thermal impact on antenna proximity zones.

Use Scenario: Reverse-polarity and overcurrent protection in USB-C powered portable speakers.

IC Role / Device Role: Back-to-back P-MOSFET pair (one device per direction) for bidirectional blocking.

Use Value: 20 V V_DSS withstands 20 V surge transients on 5 V USB-PD lines; 0.45 V V_GS(th) guarantees turn-off during fault detection.

DC-DC Buck Converter Synchronous Rectifier

Industrial Handheld Scanner Power Rail

Use Scenario: Low-side synchronous rectifier in 3.3 V/3 A buck converter powering CMOS image sensor.

IC Role / Device Role: P-channel MOSFET replacing Schottky diode in freewheeling path.

Use Value: 32 ns t_rr and 12.8 nC Q_rr reduce switching losses by 40% vs. 40 V Schottky at 1.5 MHz operation.

Use Scenario: Main 5 V system rail switch controlled by ARM Cortex-M0+ microcontroller GPIO.

IC Role / Device Role: Load switch isolating processor core from peripherals during sleep mode.

Use Value: 4.5 nC Q_g permits full turn-on in <100 ns using 10 mA GPIO drive, meeting 200 µs wake-up timing spec.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	R_DS(on) = 0.115 Ω @ 2.5 V; V_DSS = 20 V; SOT-23-3 package (3-pin, no redundant terminals)	Lacks redundant source/drain pins → higher package inductance; unsuitable for >2 MHz switching	Prefer STT5PF20V where layout space allows SOT23-6L and SOA margin is critical.
DMG2301U	R_DS(on) = 0.095 Ω @ 2.5 V; V_DSS = 20 V; SOT-23-3; Q_g = 5.2 nC	Higher gate charge increases MCU GPIO stress; no integrated diode characterization data published	Choose STT5PF20V when reverse recovery specs (t_rr, Q_rr) must be guaranteed for synchronous rectification.

Compared with Si2301DDS and DMG2301U, STT5PF20V offers lower R_DS(on) at 2.5 V, verified reverse recovery parameters, and redundant bonding for improved thermal and electrical performance in high-reliability portable designs.

Availability

STT5PF20V is available at Aetrix Electronics and suitable for mobile phone power management, Li-ion battery protection circuits, and DC-DC buck converter synchronous rectification requiring stable component supply across long-lifecycle consumer electronics programs.

Supply support for STT5PF20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, low-voltage power conversion in space-constrained portable and battery-powered equipment, emphasizing logic-level drive and thermal performance in miniature packages.

FAQ

Is STT5PF20V suitable for hot-swap applications?

Yes - its 20 V V_DSS, 5 A continuous rating, and SOA-limited pulsed current (20 A) support controlled inrush limiting. The 0.45 V V_GS(th) ensures predictable turn-on during gradual voltage ramp-up, and the SOT23-6L package provides adequate thermal mass for brief overload events without external current limiting.

Does STT5PF20V require a gate resistor for 2.5 V MCU drive?

No external gate resistor is required for basic on/off switching with 2.5 V GPIOs driving ≤10 mA. However, a 10–47 Ω series resistor is recommended to damp ringing in high-frequency (>500 kHz) switching applications, as confirmed by the 4.5 nC Q_g and 42.5 pF Crss values in the datasheet.

What is the maximum PCB copper area needed to maintain T_j < 125 °C at 5 A continuous?

Using R_thj-amb = 78 °C/W and P_D = I² × R_DS(on) = 25 × 0.085 = 2.125 W, ambient-to-junction rise is ~166 °C - exceeding limits. Therefore, derating to 3.1 A (per datasheet) yields P_D ≈ 0.82 W, requiring ≥250 mm² of 1 oz copper on both sides with thermal vias to hold T_j < 125 °C at 25 °C ambient.

Can STT5PF20V replace an N-channel MOSFET in high-side configuration?

Yes - as a P-channel device, it is inherently suited for high-side switching without bootstrap circuitry. When placed between V_IN and load, its source connects to V_IN, gate driven low to turn on. This avoids complexity of floating gate drives required by N-channel high-side switches, making it ideal for 2.5 V–5 V rail control in portable systems.

STT5PF20V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4.5 nC @ 2.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 412 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

STT5PF20V FAQ

1.How can I place an order for STT5PF20V through Aetrix?

Please submit a Request for Quotation (RFQ) for STT5PF20V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STT5PF20V reliable?

The price and inventory of STT5PF20V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STT5PF20V is usually 5 days.

3.What payment methods are accepted for STT5PF20V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STT5PF20V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STT5PF20V?

STT5PF20V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STT5PF20V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STT5PF20V?

For technical support, including STT5PF20V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STT5PF20V requirements.

6.How does Aetrix verify that STT5PF20V is sourced from the original manufacturer or authorized distributors?

All STT5PF20V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STT5PF20V meets industry standards.

7.What is the process for return or replacement of STT5PF20V?

All STT5PF20V units undergo pre-shipment inspection (PSI). If there is an issue with STT5PF20V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STT5PF20V part is unused and in its original packaging.

Return procedure for STT5PF20V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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