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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU10N60M2

Name: STU10N60M2
Brand: STMicroelectronics
SKU: STU10N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU10N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU10N60M2.pdf

Description:: MOSFET N-CH 600V 7.5A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU10N60M2 from STMicroelectronics is an N-channel 600 V, 0.55 Ω typ. (0.60 Ω max.) MDmesh™ M2 Power MOSFET in D²PAK (TO-263) package, rated for 7.5 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It features extremely low gate charge (13.5 nC), optimized C_oss profile (22 pF typ.), and Zener-protected gate, making it suitable for high-efficiency 400–600 V flyback and PFC stages in industrial SMPS.

For engineers reviewing the STU10N60M2 datasheet, STU10N60M2 pinout, STU10N60M2 application, or STU10N60M2 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching ruggedness (E_AS = 110 mJ), diode reverse recovery performance (Q_rr = 2.0 µC @ T_J = 25 °C), and thermal resistance (R_thJC = 1.47 °C/W).

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low conduction loss while maintaining fast, controlled switching. Its gate threshold voltage (2–4 V) enables direct drive from standard 10 V logic-level controllers, and its low C_iss/C_rss ratio (400 pF / 0.84 pF) supports stable operation under high dv/dt conditions (50 V/ns MOSFET ruggedness).

The integrated source-drain diode exhibits 1.6 V forward voltage at 7.5 A and 270 ns reverse recovery time (T_J = 25 °C), with Q_rr increasing to 2.8 µC at 150 °C - a critical parameter for synchronous rectification and resonant topologies where diode losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage in industrial AC-DC converters
R_DS(on) typ.	0.55 Ω @ V_GS = 10 V, I_D = 3 A - enables <1.2 W conduction loss at 7.5 A, reducing heatsink requirements
Q_g	13.5 nC - allows fast turn-on with low gate driver power dissipation (<15 mW @ 100 kHz, 10 V swing)
E_AS	110 mJ - guarantees robustness against unclamped inductive switching events in hard-switched PFC and LLC primary switches
C_oss	22 pF - contributes to low capacitive turn-off loss and stable zero-voltage switching (ZVS) boundary in resonant converters
T_J max	150 °C - permits operation in sealed enclosures or high-ambient environments without derating below 4.9 A continuous current
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with standard PWM controllers and avoids spurious conduction during noise transients

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for low thermal resistance (R_thJC = 1.47 °C/W); thermally efficient surface-mount footprint supporting >85 W power dissipation at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V rating; low 6.4 Ω intrinsic gate resistance minimizes ringing with standard RC snubbers
2 (D / TAB)	Drain / Heat Sink Interface	Main high-side power path; electrically connected to exposed copper tab - must be isolated from PCB ground unless referenced to system high-side potential
3 (S)	Source	Power return and gate reference node; ties to driver ground; low-inductance layout essential to suppress V_GS undershoot during fast switching

Key Features

Feature	Design Value
MDmesh M2 technology	Strip-based silicon architecture delivering 25% lower R_DS(on) × area vs. prior-generation 600 V MOSFETs, enabling smaller PCB footprints in space-constrained adapters
Zener-protected gate	Integrated gate-body Zener clamps ±25 V transients, eliminating need for external gate protection in noisy industrial environments
100% avalanche tested	Each unit validated for single-pulse avalanche energy of 110 mJ - ensures production-line reliability in overvoltage-prone motor drives and UPS systems
Optimized C_oss profile	C_oss remains stable across 0–480 V (C_oss,eq = 83 pF), enabling predictable soft-switching behavior in LLC and active-clamp forward converters
Low Q_gd/Q_g ratio	7.2 nC / 13.5 nC = 0.53 - improves Miller immunity and reduces risk of false turn-on during high dv/dt commutation in half-bridge configurations

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 600 W active clamp forward converter operating from 380 V DC bus in telecom rectifier shelf.

IC Role / Device Role / Timing Role: Primary-side main switch handling 7.5 A peak current at 200 kHz, synchronized to controller's dead-time logic.

Use Value: Low C_oss and 110 mJ E_AS enable reliable ZVS transition and withstand bus overvoltage surges up to 650 V without failure.

Use Scenario: High-density 1 kW server PSU using interleaved PFC stage with 400 V nominal input.

IC Role / Device Role / Timing Role: Boost switch conducting 7.5 A RMS current; driven by UCC28070 controller with 10 V gate drive.

Use Value: 0.55 Ω R_DS(on) limits conduction loss to <1.1 W, allowing 2-layer PCB thermal design without forced air cooling.

Motor Drive Inverters

LED Streetlight Drivers

Use Scenario: 3-phase 750 W BLDC inverter for HVAC compressors, operating at 10 kHz PWM with 600 V DC link.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V half-bridge; switched with isolated gate driver (Si8233).

Use Value: 270 ns t_rr and 14.4 A I_RRM minimize shoot-through risk and reduce diode recovery loss by 35% vs. standard FRD-based solutions.

Use Scenario: Outdoor 150 W constant-current LED driver using quasi-resonant flyback topology with 550 V reflected voltage.

IC Role / Device Role / Timing Role: Main power switch turning on at valley point; gate driven by L6565E controller.

Use Value: Stable V_GS(th) (2–4 V) and low Q_g ensure precise valley detection and <5% duty-cycle jitter across –40 to +85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10N60M2	Same die, TO-220 package; R_thJC = 1.47 °C/W but higher R_thJA (62.5 °C/W) due to through-hole mounting	Better suited for prototyping or low-volume open-frame supplies where manual assembly and heatsink bolt-down are acceptable	Select when mechanical robustness and serviceability outweigh surface-mount density requirements
IPP60R190C7	Infineon CoolMOS™ C7; 0.19 Ω R_DS(on), 33 nC Q_g, 650 V rating - lower conduction loss but higher switching loss and cost	Preferred in high-efficiency (>94%) 1 kW+ PFC stages where gate drive capability and thermal budget allow higher Q_g	Choose only if system-level efficiency gain justifies 2.5× gate driver power increase and BOM cost uplift

Compared with STP10N60M2, STU10N60M2 offers superior thermal interface via D²PAK's low-profile soldered tab, while IPP60R190C7 trades higher R_DS(on) tolerance and tighter V_GS(th) distribution for reduced conduction loss - requiring re-optimization of gate resistor and snubber values.

Availability

STU10N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and LED streetlight drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for STU10N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU10N60M2 belongs to the MDmesh M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–600 V industrial power conversion systems.

FAQ

What is the maximum continuous drain current for STU10N60M2 at 100 °C case temperature?

The maximum continuous drain current is 4.9 A at T_C = 100 °C, as specified in Table 1 (Absolute Maximum Ratings). This derating reflects junction-to-case thermal resistance (1.47 °C/W) and maximum allowable junction temperature (150 °C), ensuring safe operation without exceeding thermal limits in enclosed environments.

Does STU10N60M2 include integrated gate protection?

Yes - STU10N60M2 integrates a Zener diode between gate and source terminals, clamping gate-source voltage to ±25 V. This eliminates the need for external gate protection components in typical industrial applications, simplifying layout and improving reliability against ESD and switching transients.

How does the source-drain diode performance compare between 25 °C and 150 °C junction temperature?

At T_J = 150 °C, reverse recovery time increases from 270 ns to 376 ns and Q_rr rises from 2.0 µC to 2.8 µC, while forward voltage drops slightly. These shifts are documented in Table 7 and require careful evaluation in high-frequency hard-switched topologies where diode losses scale with temperature.

Can STU10N60M2 replace STB10N60M2 in existing D²PAK designs?

No - STU10N60M2 was removed from ST's active portfolio per DS9703 Rev 4 (Jan 2021); STB10N60M2 remains the valid D²PAK variant. STU10N60M2 is obsolete and not recommended for new designs; STB10N60M2 shares identical electrical specs and package dimensions, with full production and support continuity.

STU10N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU10N60M2 FAQ

1.How can I place an order for STU10N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU10N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU10N60M2 reliable?

The price and inventory of STU10N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU10N60M2 is usually 5 days.

3.What payment methods are accepted for STU10N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU10N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU10N60M2?

STU10N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU10N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU10N60M2?

For technical support, including STU10N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU10N60M2 requirements.

6.How does Aetrix verify that STU10N60M2 is sourced from the original manufacturer or authorized distributors?

All STU10N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU10N60M2 meets industry standards.

7.What is the process for return or replacement of STU10N60M2?

All STU10N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STU10N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU10N60M2 part is unused and in its original packaging.

Return procedure for STU10N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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