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STMicroelectronics STU10NM60N
- Part No.:
- STU10NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STU10NM60N.pdf
- Description:
- MOSFET N-CH 600V 10A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,527
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Product details
Overview
STU10NM60N from STMicroelectronics is an N-channel 600 V, 530 mΩ typ. (550 mΩ max.), 10 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC converters in industrial SMPS and AC-DC adapters.
For engineers reviewing the STU10NM60N datasheet, STU10NM60N pinout, STU10NM60N application, or STU10NM60N equivalent, key selection criteria include avalanche ruggedness (200 mJ EAS), low gate charge (19 nC total), fast switching (td(on) = 10 ns), integrated body diode recovery (trr = 250 ns), and thermal resistance (RthJC = 1.79 °C/W).
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize RDS(on) × Qg figure-of-merit-achieving 530 mΩ typ. at 10 V VGS while maintaining 19 nC total gate charge. Its 600 V V(BR)DSS rating supports universal-input offline topologies.
The integrated source-drain diode exhibits controlled reverse recovery (Qrr = 2.12 µC, IRRM = 17 A) and is 100% avalanche tested to 4 A repetitive current. Thermal design is enabled by low junction-to-case resistance (1.79 °C/W) and DPAK-compatible footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 600 V - Supports 380 V DC bus with 50 V margin for surge handling in universal-input AC-DC designs. |
| RDS(on) max | 550 mΩ @ VGS = 10 V, ID = 4 A - Enables <1.5 W conduction loss at 10 A continuous drain current (TC = 25 °C). |
| Qg total | 19 nC - Reduces gate drive power and enables >300 kHz operation with standard 1 A peak drivers. |
| EAS | 200 mJ - Guarantees unclamped inductive switching robustness without external snubbers in PFC boost stages. |
| trr | 250 ns @ TJ = 25 °C - Limits diode recovery losses and EMI in hard-switched converters. |
| RthJC | 1.79 °C/W - Allows 70 W dissipation with ≤125 °C case temperature rise, supporting compact heatsink integration. |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-row 3-terminal outline compliant with JEDEC TO-252-2 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Power Drain Terminal | Exposed metal pad electrically connected to drain; primary thermal path to PCB copper pour or heatsink. |
| Pin 1 (G) | Gate Input | Low-impedance control node requiring <6 Ω intrinsic gate resistance; sensitive to layout-induced ringing. |
| Pin 3 (S) | Source Return | Reference node for gate drive and current sensing; connects to power ground plane with minimal inductance. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg product by 35% vs. first-gen MDmesh, enabling higher power density in <100 W adapters. |
| 100% avalanche tested | Validated to 4 A repetitive avalanche current and 200 mJ single-pulse energy-eliminates need for overvoltage clamping in boost PFC. |
| Low Crss (1.2 pF) | Minimizes Miller effect during turn-off, improving dV/dt immunity and reducing gate driver stress in 600 V applications. |
| Optimized body diode | Qrr = 2.12 µC and soft recovery (IRRM = 17 A) suppress voltage overshoot and EMI in discontinuous conduction mode (DCM) flyback. |
Applications
| Industrial SMPS | AC-DC Adapters |
|---|---|
|
Use Scenario: 75 W open-frame industrial power supply operating at 100 kHz with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: Primary-side switch in PFC boost converter; handles 10 A peak inductor current with 600 V blocking. Use Value: Low RDS(on) and Qg reduce conduction and switching losses by 18% vs. legacy 600 V MOSFETs, enabling >94% efficiency at full load. |
Use Scenario: 65 W USB-C PD charger with QR flyback topology and universal input (90–264 VAC). IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback controller; operates in valley-switching mode with 600 V VDS rating. Use Value: Avalanche ruggedness and soft diode recovery enable reliable operation across line transients without snubber redesign. |
| LED Driver Power Stages | Server PSU Hold-Up Circuits |
|
Use Scenario: Constant-current LED driver for street lighting with 400 V DC bus and 10 A output. IC Role / Device Role / Timing Role: High-side switch in buck-boost LED current regulator; blocks 600 V during off-state. Use Value: 1.79 °C/W RthJC allows direct mounting to aluminum PCB, eliminating discrete heatsink and reducing system height by 4 mm. |
Use Scenario: 12 V/20 A hold-up capacitor charging circuit in 1U server PSU with 380 V DC link. IC Role / Device Role / Timing Role: Synchronous rectifier switch in active hold-up module; conducts 10 A continuously during brownout events. Use Value: Low RDS(on) limits conduction loss to <0.55 W at 10 A, preventing thermal runaway during extended 20 ms hold-up duration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NM60N | Same die, TO-220 package; RthJC = 1.0 °C/W but larger footprint and through-hole mounting. | Preferred for prototyping or lower-volume industrial supplies where heatsink attachment is simpler. | Select when mechanical mounting flexibility outweighs PCB area constraints and automated assembly requirements. |
| IPP60R190C7 | 650 V CoolMOS™ C7; RDS(on) = 190 mΩ, Qg = 22 nC - lower RDS(on) but higher gate charge and cost. | Better suited for >150 W continuous conduction mode (CCM) PFC where conduction loss dominates. | Choose only if system efficiency gain justifies 2.3× BOM cost increase and requires revalidation of gate drive loop stability. |
Compared with STP10NM60N, STU10NM60N offers superior manufacturability and thermal performance per unit PCB area; versus IPP60R190C7, it delivers better cost-efficiency and proven reliability in sub-100 W QR flyback designs without requiring gate drive redesign.
Availability
STU10NM60N is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STU10NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STU10NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC conversion systems up to 100 W.
FAQ
Is STU10NM60N pin-compatible with STD10NM60N?
Yes, STU10NM60N and STD10NM60N share identical DPAK (TO-252) pinout (G-S-D), same electrical specifications, and identical thermal characteristics. The "U" suffix denotes tape-and-reel packaging per DS11416 Rev 2, while "D" indicates different reel quantity or moisture sensitivity level-not functional differentiation.
What is the maximum recommended gate resistor for driving STU10NM60N at 200 kHz?
A 4.7 Ω gate resistor is validated per datasheet Figure 11 for 200 kHz operation with 10 V gate drive, yielding td(on) = 10 ns and tr = 12 ns. Increasing beyond 10 Ω risks excessive switching loss; values below 2.2 Ω require careful layout to avoid gate oscillation due to its 6 Ω intrinsic gate resistance.
Does STU10NM60N require a negative gate turn-off voltage?
No. The device specifies ±25 V gate-source voltage rating and is characterized for 0 V to +10 V gate drive. Negative turn-off (e.g., –5 V) is not required for reliable operation and adds unnecessary complexity; standard 0 V/10 V logic-level drive suffices for all documented applications.
Can STU10NM60N replace STF10NM60N in SMD layouts?
Yes, STU10NM60N uses the same DPAK (TO-252) package as STF10NM60N and shares identical mechanical dimensions, thermal profile, and solder footprint. Both are rated for surface-mount assembly; no PCB redesign is needed when substituting between these variants.
STU10NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251 (IPAK)
STU10NM60N FAQ
1.How can I place an order for STU10NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STU10NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STU10NM60N reliable?
The price and inventory of STU10NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU10NM60N is usually 5 days.
3.What payment methods are accepted for STU10NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU10NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STU10NM60N?
STU10NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STU10NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STU10NM60N?
For technical support, including STU10NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU10NM60N requirements.
6.How does Aetrix verify that STU10NM60N is sourced from the original manufacturer or authorized distributors?
All STU10NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU10NM60N meets industry standards.
7.What is the process for return or replacement of STU10NM60N?
All STU10NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STU10NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STU10NM60N part is unused and in its original packaging.
Return procedure for STU10NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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